MCR08B, MCR08M Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. http://onsemi.com SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS Features • • • • • Sensitive Gate Trigger Current Blocking Voltage to 600 V Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Pb−Free Packages are Available G A K MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, RGK = 1000 W TJ = 25 to 110°C) MCR08BT1 MCR08MT1 VDRM, VRRM On-State Current RMS (All Conduction Angles; TC = 80°C) IT(RMS) 0.8 A Peak Non-repetitive Surge Current (1/2 Cycle Sine Wave, 60 Hz, TC = 25°C) ITSM 8.0 A Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s PGM 0.1 W Forward Peak Gate Power (TC = 80°C, t = 1.0 ms) Average Gate Power (TC = 80°C, t = 8.3 ms) Value Unit V 200 600 0.01 W TJ −40 to +110 °C Tstg −40 to +150 °C Rating Symbol Value Unit Thermal Resistance, Junction−to−Ambient PCB Mounted per Figure 1 RqJA 156 °C/W Thermal Resistance, Junction−to−Tab Measured on Anode Tab Adjacent to Epoxy RqJT 25 °C/W TL 260 °C Storage Temperature Range AYW CR08x G G 1 PG(AV) Operating Junction Temperature Range SOT−223 CASE 318E STYLE 10 1 CR08x = Device Code x = B or M A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode THERMAL CHARACTERISTICS Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 5 1 ORDERING INFORMATION Device Package Shipping† MCR08BT1 SOT−223 1000/Tape &Reel MCR08BT1G SOT−223 (Pb−Free) 1000/Tape &Reel MCR08MT1 SOT−223 1000/Tape & Reel MCR08MT1G SOT−223 (Pb−Free) 1000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR08BT1/D MCR08B, MCR08M ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit − − − − 10 200 mA mA OFF CHARACTERISTICS IDRM, IRRM Peak Repetitive Forward or Reverse Blocking Current (Note 2) (VAK = Rated VDRM or VRRM, RGK = 1000 W TJ = 25°C TJ = 110°C ON CHARACTERISTICS Peak Forward On-State Voltage (Note 1) (IT = 1.0 A Peak) VTM − − 1.7 V Gate Trigger Current (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 100 W) IGT − − 200 mA Holding Current (Note 3) (VAK = 12 Vdc, Initiating Current = 20 mA) IH − − 5.0 mA VGT − − 0.8 V 10 − − Gate Trigger Voltage (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 100 W) DYNAMIC CHARACTERISTICS dv/dt Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110°C, RGK = 1000 W, Exponential Method) V/ms 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. RGK = 1000 W is included in measurement. 4. RGK is not included in measurement. Voltage Current Characteristic of SCR Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH + Current VTM on state IRRM at VRRM Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode − 0.15 3.8 Anode + IH + Voltage IDRM at VDRM Forward Blocking Region (off state) 0.079 2.0 0.091 0.091 2.3 2.3 0.079 2.0 0.984 25.0 0.059 0.059 0.059 1.5 1.5 1.5 0.096 2.44 0.096 2.44 0.059 1.5 0.244 6.2 ǒinches Ǔ mm 0.096 2.44 0.059 1.5 BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY 0.472 12.0 Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 http://onsemi.com 2 1.0 0.1 TYPICAL AT TJ = 110°C MAX AT TJ = 110°C MAX AT TJ = 25°C 0.01 1.0 0 2.0 4.0 3.0 160 150 140 130 120 110 100 90 80 70 60 50 40 30 100 α T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) 50 OR 60 Hz HALFWAVE 90 α = CONDUCTION ANGLE 80 dc 70 180° 60 120° α = 30° 40 60° 0 0.1 90° 0.2 1 2 3 MINIMUM FOOTPRINT = 0.076 cm2 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 dc 180° 80 120° 70 α = 30° 60 60° 50 40 90° α CONDUCTION ANGLE 0 0.1 0.2 0.3 0.4 0.5 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature 110 PAD AREA = 4.0 cm2, 50 OR 60 Hz HALFWAVE 120° α = 30° 60° 70 90° α 180° 120° α = 30° 60° 90° α α = CONDUCTION α = CONDUCTION ANGLE ANGLE 0.1 50 OR 60 Hz HALFWAVE dc 180° 90 10 1.0 cm2 FOIL, 50 OR 60 Hz HALFWAVE 90 20 0.5 0.4 0.3 dc 0 1.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 100 50 AS SHOWN 30 α = 110 60 PCB WITH TAB AREA Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area 100 80 L 4 Figure 2. On-State Characteristics 110 20 DEVICE MOUNTED ON FIGURE 1 AREA = L2 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 110 50 L TYPICAL MAXIMUM FOIL AREA (cm2) 30 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) R θJA , JUNCTION TO AMBIENT THERMAL RESISTANCE, ( °C/W) 10 T(tab) , MAXIMUM ALLOWABLE TAB TEMPERATURE ( ° C) T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) MCR08B, MCR08M 0.2 0.3 0.4 85 0.5 0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 0.1 0.2 0.3 0.4 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature Figure 7. Current Derating Reference: Anode Tab http://onsemi.com 3 0.5 MCR08B, MCR08M 1.0 MAXIMUM AVERAGE POWER P(AV),DISSIPATION (WATTS) 0.9 0.8 α = 0.7 α r T , TRANSIENT THERMAL RESISTANCE NORMALIZED 1.0 α = 30° CONDUCTION ANGLE 60° 0.6 90° 0.5 0.4 dc 0.3 180° 0.2 120° 0.1 0 0 0.1 0.2 0.01 0.0001 0.5 0.4 0.3 0.1 0.001 VAK = 12 V RL = 100 W 0.6 VAK = 12 V RL = 3.0 kW I H , HOLDING CURRENT (NORMALIZED) VGT , GATE TRIGGER VOLTAGE (VOLTS) 100 2.0 0.5 1.0 0.4 −20 0 20 40 60 80 0 −40 110 −20 0 20 40 60 80 110 TJ, JUNCTION TEMPERATURE, (°C) TJ, JUNCTION TEMPERATURE, (°C) Figure 10. Typical Gate Trigger Voltage versus Junction Temperature Figure 11. Typical Normalized Holding Current versus Junction Temperature 1000 I GT , GATE TRIGGER CURRENT ( μA) 0.7 V GT , GATE TRIGGER VOLTAGE (VOLTS) 10 Figure 9. Thermal Response Device Mounted on Figure 1 Printed Circuit Board 0.7 0.65 0.6 RGK = 1000 W, RESISTOR CURRENT INCLUDED 100 0.55 0.5 VAK = 12 V RL = 100 W TJ = 25°C 0.45 0.4 0.35 0.3 0.1 1.0 t, TIME (SECONDS) Figure 8. Power Dissipation 0.3 −40 0.1 0.01 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 1.0 10 100 1000 VAK = 12 V RL = 100 W WITHOUT GATE RESISTOR 10 1.0 −40 −20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) IGT, GATE TRIGGER CURRENT (mA) Figure 12. Typical Range of VGT versus Measured IGT Figure 13. Typical Gate Trigger Current versus Junction Temperature http://onsemi.com 4 110 MCR08B, MCR08M 10000 100 IGT = 48 mA 10 Vpk = 400 V 1000 STATIC dv/dt (V/ μS) IH , HOLDING CURRENT (mA) 5000 TJ = 25°C IGT = 7 mA 1.0 500 100 TJ = 25° 50 10 125° 5.0 50° 110° 1.0 75° 0.5 0.1 1.0 10 10,000 100 1000 10,000 100,000 RGK, GATE-CATHODE RESISTANCE (OHMS) Figure 14. Holding Current Range versus Gate-Cathode Resistance Figure 15. Exponential Static dv/dt versus Junction Temperature and Gate-Cathode Termination Resistance 10000 300 V 1000 TJ = 110°C 1000 200 V 500 0.1 10 100,000 RGK, GATE-CATHODE RESISTANCE (OHMS) 10000 100 V 100 STATIC dv/dt (V/ μS) 400 V 50 V 50 500 V 10 5.0 TJ = 110°C 400 V (PEAK) 500 100 RGK = 100 50 10 RGK = 1.0 k 5.0 1.0 10 100 1000 10,000 RGK = 10 k 1.0 0.01 0.1 1.0 10 RGK, GATE-CATHODE RESISTANCE (OHMS) CGK, GATE-CATHODE CAPACITANCE (nF) Figure 16. Exponential Static dv/dt versus Peak Voltage and Gate-Cathode Termination Resistance Figure 17. Exponential Static dv/dt versus Gate-Cathode Capacitance and Resistance 10000 1000 STATIC dv/dt (V/ μS) STATIC dv/dt (V/ μS) 1000 100 500 100 50 10 IGT = 70 mA IGT = 5 mA IGT = 35 mA 5.0 1.0 10 IGT = 15 mA 100 1000 10,000 GATE-CATHODE RESISTANCE (OHMS) Figure 18. Exponential Static dv/dt versus Gate-Cathode Termination Resistance and Product Trigger Current Sensitivity http://onsemi.com 5 100,000 100 MCR08B, MCR08M PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D b1 DIM A A1 b b1 c D E e e1 L1 HE 4 HE 1 2 3 E b e1 e 0.08 (0003) q C q A A1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE L1 SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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