MCR8DSM, MCR8DSN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. http://onsemi.com SCRs 8 AMPERES RMS 600 − 800 VOLTS Features • • • • • • • Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Available in Two Package Styles Surface Mount Lead Form − Case 369C Miniature Plastic Package − Straight Leads − Case 369 Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available G A K MARKING DIAGRAM 4 Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8DSM MCR8DSN VDRM, VRRM On−State RMS Current (180° Conduction Angles; TC = 90°C) IT(RMS) 8.0 A Average On−State Current (180° Conduction Angles; TC = 90°C) IT(AV) 5.1 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) ITSM 90 A Circuit Fusing Consideration (t = 8.3 msec) I2t 34 A2sec PGM 5.0 W Forward Peak Gate Power (Pulse Width ≤ 1.0 sec, TC = 90°C) Forward Average Gate Power (t = 8.3 msec, TC = 90°C) Value Unit 0.5 W Forward Peak Gate Current (Pulse Width ≤ 1.0 sec, TC = 90°C) IGM 2.0 A Operating Junction Temperature Range TJ −40 to 110 °C Storage Temperature Range Tstg −40 to 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 4 1 V 600 800 PG(AV) YWW CR 8DSxG DPAK CASE 369C STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 1 Y = Year WW = Work Week CR8DSx = Device Code x= M or N G = Pb−Free Package PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR8DSM/D MCR8DSM, MCR8DSN THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Max Unit RJC RJA RJA 2.2 88 80 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristics Min Typ Max Unit − − − − 10 500 VGRM 10 12.5 18 V IRGM − − 1.2 A VTM − 1.4 1.8 V 5.0 − 12 − 200 300 0.45 − 0.2 0.65 − − 1.0 1.5 − 0.5 − 1.0 − 6.0 10 0.5 − 1.0 − 6.0 10 − 2.0 5.0 2.0 10 − OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1.0 k) (Note 3) TJ = 25°C TJ = 110°C IDRM IRRM A ON CHARACTERISTICS Peak Reverse Gate Blocking Voltage (IGR = 10 A) Peak Reverse Gate Blocking Current (VGR = 10 V) Peak Forward On−State Voltage (Note 4) (ITM = 16 A) Gate Trigger Current (Continuous dc) (Note 5) (VD = 12 V, RL = 100 ) Gate Trigger Voltage (Continuous dc) (Note 5) (VD = 12 V, RL = 100 ) Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) Latching Current (VD = 12 V, IG = 2.0 mA) A IGT TJ = 25°C TJ = −40°C VGT TJ = 25°C TJ = −40°C TJ = 110°C V IH TJ = 25°C TJ = −40°C mA IL TJ = 25°C TJ = −40°C Total Turn−On Time (Source Voltage = 12 V, RS = 6.0 k, IT = 16 A(pk), RGK = 1.0 k) (VD = Rated VDRM, Rise Time = 20kns, Pulse Width = 10 s) mA s tgt DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, RGK = 1.0 k, TJ = 110°C) dv/dt V/s 2. Surface mounted on minimum recommended pad size. 3. Ratings apply for negative gate voltage or RGK = 1.0 k. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 4. Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. 5. RGK current not included in measurements. ORDERING INFORMATION Device MCR8DSMT4 MCR8DSMT4G MCR8DSNT4 MCR8DSNT4G Package Shipping † DPAK DPAK (Pb−Free) DPAK 2500 / Tape & Reel DPAK (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MCR8DSM, MCR8DSN Voltage Current Characteristic of SCR + Current Anode + VTM Symbol Parameter VDRM Peak Repetitive Off−State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off−State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On−State Voltage IH Holding Current on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) P(AV) , AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) Anode − 110 105 = Conduction Angle 100 95 dc 90 = 30° 60° 90° 120° 180° 85 0 1.0 2.0 3.0 4.0 5.0 6.0 12 10 8.0 180° = Conduction Angle 6.0 90° 120° dc = 30° 60° 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 IT(AV), AVERAGE ON−STATE CURRENT (AMPS) IT(AV), AVERAGE ON−STATE CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. On−State Power Dissipation http://onsemi.com 3 6.0 MCR8DSM, MCR8DSN 1.0 TYPICAL @ TJ = 25°C MAXIMUM @ TJ = 110°C 10 MAXIMUM @ TJ = 25°C 1.0 r(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) I T, INSTANTANEOUS ON−STATE CURRENT (AMPS) 100 0.1 ZJC(t) = RJC(t)Sr(t) 0.01 0 1.0 2.0 3.0 4.0 5.0 0.1 1.0 10 100 1000 10 K VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On−State Characteristics Figure 4. Transient Thermal Response 1.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) 1000 I GT, GATE TRIGGER CURRENT ( A) 0.1 RGK = 1.0 K 100 GATE OPEN 10 1.0 −40 −25 0.1 −10 5.0 20 35 50 65 80 95 110 −40 −25 −10 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature 10 110 10 RGK = 1.0 K IL, LATCHING CURRENT (mA) IH , HOLDING CURRENT (mA) RGK = 1.0 K 1.0 0.1 1.0 0.1 −40 −25 −10 5.0 20 35 50 65 80 95 110 −40 −25 −10 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature http://onsemi.com 4 110 MCR8DSM, MCR8DSN 10 1000 8.0 STATIC dv/dt (V/ s) IH, HOLDING CURRENT (mA) TJ = 25°C 6.0 IGT = 25 A 4.0 70°C 100 90°C TJ = 110°C 10 IGT = 10 A 2.0 0 1.0 100 1000 10 K 1000 100 RGK, GATE−CATHODE RESISTANCE (OHMS) RGK, GATE−CATHODE RESISTANCE (OHMS) Figure 9. Holding Current versus Gate−Cathode Resistance Figure 10. Exponential Static dv/dt versus Gate−Cathode Resistance and Junction Temperature 1000 1000 TJ = 110°C VD = 800 V TJ = 110°C 100 STATIC dv/dt (V/ s) STATIC dv/dt (V/ s) 400 V 600 V VPK = 800 V 10 1.0 100 IGT = 25 A IGT = 10 A 10 1.0 1000 100 1000 100 RGK, GATE−CATHODE RESISTANCE (OHMS) RGK, GATE−CATHODE RESISTANCE (OHMS) Figure 11. Exponential Static dv/dt versus Gate−Cathode Resistance and Peak Voltage Figure 12. Exponential Static dv/dt versus Gate−Cathode Resistance and Gate Trigger Current Sensitivity http://onsemi.com 5 MCR8DSM, MCR8DSN PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− T STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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