2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO−92/TO-226AA package which is readily adaptable for use in automatic insertion equipment. Features http://onsemi.com SILICON CONTROLLED RECTIFIERS 0.8 A RMS, 30 − 200 V • Sensitive Gate Trigger Current − 200 A Maximum • Low Reverse and Forward Blocking Current − 50 A Maximum, • • • • TC = 110°C Low Holding Current − 5 mA Maximum Passivated Surface for Reliability and Uniformity Device Marking: Device Type, e.g., 2N5060, Date Code Pb−Free Packages are Available* G A K MARKING DIAGRAM 1 2 3 2N 50xx YWW TO−92 CASE 29 STYLE 10 50xx Y WW Specific Device Code = Year = Work Week PIN ASSIGNMENT 1 Cathode 2 Gate 3 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 7 1 Publication Order Number: 2N5060/D 2N5060 Series MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N5060 2N5061 2N5062 2N5064 VDRM, VRRM On-State Current RMS (180° Conduction Angles; TC = 80°C) IT(RMS) Value Unit V 30 60 100 200 0.8 A *Average On-State Current (180° Conduction Angles) (TC = 67°C) (TC = 102°C) IT(AV) A *Peak Non-repetitive Surge Current, TA = 25°C (1/2 cycle, Sine Wave, 60 Hz) ITSM 10 A I2t 0.4 A2s 0.51 0.255 Circuit Fusing Considerations (t = 8.3 ms) *Average On-State Current (180° Conduction Angles) (TC = 67°C) (TC = 102°C) IT(AV) A *Forward Peak Gate Power (Pulse Width 1.0 sec; TA = 25°C) PGM 0.1 W 0.51 0.255 *Forward Average Gate Power (TA = 25°C, t = 8.3 ms) PG(AV) 0.01 W *Forward Peak Gate Current (Pulse Width 1.0 sec; TA = 25°C) IGM 1.0 A *Reverse Peak Gate Voltage (Pulse Width 1.0 sec; TA = 25°C) VRGM 5.0 V *Operating Junction Temperature Range TJ −40 to +110 °C *Storage Temperature Range Tstg −40 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, Junction−to−Case (Note 2) RJC 75 °C/W Thermal Resistance, Junction−to−Ambient RJA 200 °C/W − +230* °C *Lead Solder Temperature (Lead Length 1/16″ from case, 10 s Max) 2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the curved surface. *Indicates JEDEC Registered Data. http://onsemi.com 2 2N5060 Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit − − − − 10 50 A A − − 1.7 V − − − − 200 350 − − − − 0.8 1.2 0.1 − − IH − − − − 5.0 10 td tr − − 3.0 0.2 − − OFF CHARACTERISTICS *Peak Repetitive Forward or Reverse Blocking Current (Note 3) TC = 25°C (VAK = Rated VDRM or VRRM) TC = 110°C IDRM, IRRM ON CHARACTERISTICS *Peak Forward On−State Voltage (Note 4) (ITM = 1.2 A peak @ TA = 25°C) VTM Gate Trigger Current (Continuous DC) (Note 5) *(VAK = 7.0 Vdc, RL = 100 ) Gate Trigger Voltage (Continuous DC) (Note 5) *(VAK = 7.0 Vdc, RL = 100 ) TC = 25°C TC = −40°C VGT *Gate Non−Trigger Voltage (VAK = Rated VDRM, RL = 100 ) TC = 110°C Holding Current (Note 5) *(VAK = 7.0 Vdc, initiating current = 20 mA) VGD TC = 25°C TC = −40°C V V mA s Turn-On Time Delay Time Rise Time (IGT = 1.0 mA, VD = Rated VDRM, Forward Current = 1.0 A, di/dt = 6.0 A/s Turn-Off Time (Forward Current = 1.0 A pulse, Pulse Width = 50 s, 0.1% Duty Cycle, di/dt = 6.0 A/s, dv/dt = 20 V/s, IGT = 1 mA) A IGT TC = 25°C TC = −40°C s tq 2N5060, 2N5061 2N5062, 2N5064 − − 10 30 − − − 30 − DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (Rated VDRM, Exponential) dv/dt V/s 3. RGK = 1000 is included in measurement. 4. Forward current applied for 1 ms maximum duration, duty cycle 1%. 5. RGK current is not included in measurement. *Indicates JEDEC Registered Data. Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current Anode + VTM on state IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode − http://onsemi.com 3 IH + Voltage IDRM at VDRM Forward Blocking Region (off state) 2N5060 Series 130 120 CASE MEASUREMENT POINT − CENTER OF FLAT PORTION 110 100 dc 90 80 α = 30° 60° 70 90° 130 a α = CONDUCTION ANGLE 180° 120° 60 TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) CURRENT DERATING 50 0 0.1 0.2 0.3 0.4 α α = CONDUCTION ANGLE 110 TYPICAL PRINTED CIRCUIT BOARD MOUNTING 90 70 dc 50 α = 30° 60° 90° 120° 180° 30 0.5 0 0.1 0.2 0.3 0.4 IT(AV), AVERAGE ON-STATE CURRENT (AMP) IT(AV), AVERAGE ON-STATE CURRENT (AMP) Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature CURRENT DERATING 10 ITSM , PEAK SURGE CURRENT (AMP) 5.0 3.0 2.0 TJ = 110°C 1.0 0.7 0.5 5.0 3.0 2.0 1.0 1.0 2.0 3.0 0.3 5.0 7.0 10 20 30 50 70 100 NUMBER OF CYCLES Figure 4. Maximum Non−Repetitive Surge Current 0.2 0.8 0.1 P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS) i T , INSTANTANEOUS ON-STATE CURRENT (AMP) 25°C 7.0 0.07 0.05 0.03 0.02 0.01 0 0.5 1.0 1.5 2.0 120° 60° 90° 0.4 dc 0.2 0 2.5 a α = CONDUCTION ANGLE α = 30° 0.6 0 0.1 0.2 0.3 0.4 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) IT(AV), AVERAGE ON-STATE CURRENT (AMP) Figure 3. Typical Forward Voltage Figure 5. Power Dissipation http://onsemi.com 4 180° 0.5 r(t), TRANSIENT THERMAL RESISTANCE NORMALIZED 2N5060 Series 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (SECONDS) Figure 6. Thermal Response I GT , GATE TRIGGER CURRENT (NORMALIZED) TYPICAL CHARACTERISTICS 0.8 200 VG , GATE TRIGGER VOLTAGE (VOLTS) VAK = 7.0 V RL = 100 RGK = 1.0 k 0.7 0.6 50 2N5062-64 20 10 5.0 0.5 2N5060-61 2.0 1.0 0.4 0.5 −50 −25 0 25 50 75 0.2 100 110 −75 −50 −25 0 25 50 75 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Gate Trigger Voltage Figure 8. Typical Gate Trigger Current 4.0 I H , HOLDING CURRENT (NORMALIZED) 0.3 −75 VAK = 7.0 V RL = 100 100 VAK = 7.0 V RL = 100 RGK = 1.0 k 3.0 2.0 2N5060,61 1.0 0.8 2N5062-64 0.6 0.4 −75 −50 −25 0 25 50 75 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Holding Current http://onsemi.com 5 100 110 100 110 2N5060 Series ORDERING INFORMATION Package Shipping† 2N5060 TO−92 5,000 Units / Box 2N5060RLRA TO−92 2,000 / Tape & Reel TO−92 (Pb−Free) 2,000 / Tape & Reel 2N5060RLRM TO−92 2,000 / Ammo Pack 2N5061 TO−92 5,000 Units / Box TO−92 (Pb−Free) 5,000 Units / Box TO−92 2,000 / Tape & Reel TO−92 (Pb−Free) 2,000 / Tape & Reel 2N5061RLRM TO−92 2,000 / Ammo Pack 2N5062 TO−92 5,000 Units / Box TO−92 (Pb−Free) 5,000 Units / Box TO−92 2,000 / Tape & Reel TO−92 (Pb−Free) 2,000 / Tape & Reel 2N5064 TO−92 5,000 Units / Box 2N5064RLRA TO−92 2,000 / Tape & Reel 2N5064RLRM TO−92 2,000 / Ammo Pack TO−92 (Pb−Free) 2,000 / Ammo Pack TO−92 2,000 / Tape & Reel Device 2N5060RLRAG 2N5061G 2N5061RLRA 2N5061RLRAG 2N5062G 2N5062RLRA 2N5062RLRAG 2N5064RLRMG 2N5060RL1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 2N5060 Series PACKAGE DIMENSIONS TO−92 TO−226AA CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE http://onsemi.com 7 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− 2N5060 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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