MBRF2545CT Preferred Device SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 25 AMPERES, 45 VOLTS Features •Highly Stable Oxide Passivated Junction •Very Low Forward Voltage Drop •Matched Dual Die Construction •High Junction Temperature Capability •High dv/dt Capability •Excellent Ability to Withstand Reverse Avalanche Energy Transients •Guardring for Stress Protection •Epoxy Meets UL 94 V-0 @ 0.125 in •Electrically Isolated •No Isolation Hardware Required •Pb-Free Package is Available* 1 2 3 MARKING DIAGRAM Mechanical Characteristics: •Case: Epoxy, Molded •Weight: 1.9 Grams (Approximately) •Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable •Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 1 AYWW B2545G AKA ISOLATED TO-220 CASE 221D STYLE 3 A Y WW B2545 G AKA = Assembly Location = Year = Work Week = Device Code = Pb-Free Package = Diode Polarity ORDERING INFORMATION Device MBRF2545CT MBRF2545CTG Package Shipping TO-220 50 Units/Rail TO-220 (Pb-Free) 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 June, 2007 - Rev. 8 1 Publication Order Number: MBRF2545CT/D MBRF2545CT MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit VRRM VRWM VR 45 V IF(AV) 12.5 25 A Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR), TC = 125°C Total Device Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 125°C IFRM A Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A TJ, Tstg -65 to +175 °C dv/dt 10000 V/ms Viso1 4500 V RqJC 3.5 °C/W TL 260 °C Symbol Max Unit 25 Operating Junction and Storage Temperature (Note 1) Voltage Rate of Change (Rated VR) RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25°C) (Note 2) A 150 Per Figure 3 THERMAL CHARACTERISTICS (Per Leg) Maximum Thermal Resistance, Junction-to-Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 12.5 A, TC = 25°C) (iF = 12.5 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR V 0.7 0.62 mA 0.2 40 100 70 50 100 I R, REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. TJ = 125°C 20 10 7.0 5.0 25°C 100°C 2.0 1.0 0.7 0.5 0.2 0.1 10 TJ = 125°C 1005C 1.0 85°C 0.1 25°C 0.01 0.001 0 0.2 0.4 0.6 0.8 vF, INSTANTANEOUS VOLTAGE (VOLTS) 1.0 0 Figure 1. Typical Forward Voltage, Per Leg 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current, Per Leg http://onsemi.com 2 50 MBRF2545CT TEST CONDITIONS FOR ISOLATION TEST* FULLY ISOLATED PACKAGE LEADS HEATSINK 0.110, MIN Figure 3. Mounting Position * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION CLIP HEATSINK Clip-Mounted Figure 4. Typical Mounting Technique http://onsemi.com 3 MBRF2545CT PACKAGE DIMENSIONS TO-220 FULLPAK CASE 221D-03 ISSUE J SEATING PLANE -T-B- F C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. U A 1 2 3 H -Y- K G N L D J R 3 PL 0.25 (0.010) M B M Y DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. 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