ONSEMI 2N4921

2N4921, 2N4922, 2N4923
2N4923 is a Preferred Device
Medium−Power Plastic
NPN Silicon Transistors
These high−performance plastic devices are designed for driver
circuits, switching, and amplifier applications.
Features
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• Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A
• Excellent Power Dissipation Due to Thermopad Construction −
•
•
•
•
PD = 30 W @ TC = 25_C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 A
Complement to PNP 2N4918, 2N4919, 2N4920
Pb−Free Packages are Available*
1.0 AMPERE
GENERAL PURPOSE
POWER TRANSISTORS
40−80 VOLTS, 30 WATTS
MAXIMUM RATINGS
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Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N4921
2N4922
2N4923
VCEO
40
60
80
Vdc
Collector−Emitter Voltage
2N4921
2N4922
2N4923
VCB
40
60
80
Vdc
Emitter Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous (Note 1)
IC
1.0
3.0
Adc
Base Current
IB
1.0
Adc
PD
30
0.24
W
mW/_C
TJ, Tstg
–65 to +150
_C
− Continuous
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
TO−225
CASE 77
STYLE 1
3
2 1
MARKING DIAGRAM
1
YWW
2
N492xG
THERMAL CHARACTERISTICS (Note 2)
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
Max
Unit
qJC
4.16
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements.
The 3.0 A maximum value is based upon actual current handling capability of
the device (see Figures 5 and 6).
2. Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
Y
= Year
WW
= Work Week
2N492x = Device Code
x = 1, 2, or 3
G
= Pb−Free Package
ORDERING INFORMATION
Device
2N4921
2N4921G
2N4922
2N4922G
2N4923
2N4923G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 11
1
Package
Shipping
TO−225
500 Units / Box
TO−225
(Pb−Free)
500 Units / Box
TO−225
500 Units / Box
TO−225
(Pb−Free)
500 Units / Box
TO−225
500 Units / Box
TO−225
(Pb−Free)
500 Units / Box
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N4921/D
2N4921, 2N4922, 2N4923
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
60
80
−
−
−
−
−
−
0.5
0.5
0.5
−
−
0.1
0.5
−
0.1
−
1.0
40
30
10
−
150
−
−
0.6
−
1.3
−
1.3
3.0
−
−
100
25
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 0.1 Adc, IB = 0)
VCEO(sus)
2N4921
2N4922
2N4923
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
Vdc
ICEO
2N4921
2N4922
2N4923
Collector Cutoff Current
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C
ICEX
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
mAdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
Collector−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
Base−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
Base−Emitter On Voltage (Note 3)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
−
Vdc
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
Small−Signal Current Gain
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
3. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%.
*Indicates JEDEC Registered Data.
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2
MHz
pF
−
2N4921, 2N4922, 2N4923
PD, POWER DISSIPATION (WATTS)
40
30
20
10
0
25
50
75
100
TC, CASE TEMPERATURE (°C)
125
150
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
APPROX
+11 V
TURN−ON PULSE
t1
VCC
Vin
Vin
VBE(off)
RC
RB
Cjd<<Ceb
t3
APPROX
+11 V
−4.0 V
SCOPE
t1 ≤ 15 ns
100 < t2 ≤ 500 ms
t3 ≤ 15 ns
Vin
APPROX 9.0 V
t2
TURN−OFF PULSE
DUTY CYCLE ≈ 2.0%
RB and RC varied to
obtain desired
current levels
Figure 2. Switching Time Equivalent Circuit
5.0
VCC = 30 V
IC/IB = 20
3.0
t, TIME (s)
μ
2.0
IC/IB = 10, UNLESS NOTED
TJ = 25°C
TJ = 150°C
VCC = 60 V
1.0
0.7
0.5
tr
0.3
0.2
0.1
0.07
0.05
td
VCC = 30 V
VCC = 60 V
VBE(off) = 2.0 V
VCC = 30 V
VBE(off) = 0
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 3. Turn−On Time
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3
500 700 1000
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
2N4921, 2N4922, 2N4923
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.03
P(pk)
qJC(t) = r(t) qJC
qJC = 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) − TC = P(pk) qJC(t)
DUTY CYCLE, D = t1/t2
0.1
0.05
0.01
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
10
7.0
5.0
5.0 ms
1.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I C − V CE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150_C; T C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T J(pk) v 150_C. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
100 ms
3.0
2.0
TJ = 150°C
1.0
0.7
0.5
dc
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
PULSE CURVES APPLY BELOW
RATED VCEO
0.3
0.2
0.1
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
100
Figure 5. Active−Region Safe Operating Area
5.0
5.0
3.0
3.0
IC/IB = 20
t f, FALL TIME (s)
μ
t s′, STORAGE TIME (s)
μ
1.0
0.7
0.5
IC/IB = 10
0.3
0.2
0.1
0.07
0.05
IC/IB = 20
2.0
2.0
IC/IB = 20
TJ = 25°C
TJ = 150°C
IB1 = IB2
ts′ = ts − 1/8 tf
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
500 700 1000
IC/IB = 10
TJ = 25°C
TJ = 150°C
VCC = 30 V
IB1 = IB2
10
Figure 6. Storage Time
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
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4
500 700 1000
hFE , DC CURRENT GAIN
1000
700
500
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
2N4921, 2N4922, 2N4923
VCE = 1.0 V
300
200
TJ = 150°C
100
70
50
25°C
−55 °C
30
20
10
2.0 3.0 5.0
10
20 30 50 100 200 300 500
IC, COLLECTOR CURRENT (mA)
1000 2000
1.0
0.8
108
1.0 A
TJ = 25°C
0.4
0.2
0
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10 20 30
IB, BASE CURRENT (mA)
50
100
200
1.5
IC = 10 x ICES
VCE = 30 V
TJ = 25°C
107
1.2
IC = 2 x ICES
VOLTAGE (VOLTS)
RBE , EXTERNAL BASE−EMITTER RESISTANCE (OHMS)
0.5 A
Figure 9. Collector Saturation Region
106
IC ≈ ICES
105
ICES VALUES
OBTAINED FROM
FIGURE 12
104
0
30
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
60
90
120
VCE(sat) @ IC/IB = 10
0
10
20 30 50
2.0 3.0 5.0
150
100 200 300 500
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Figure 10. Effects of Base−Emitter Resistance
Figure 11. “On” Voltage
104
TJ = 150°C
103
100°C
102
25°C
101
IC = ICES
100
VCE = 30 V
10−1
10− 2
−0.2
1000 2000
+2.5
REVERSE
−0.1
FORWARD
0
+0.1
+0.2
+0.3
+0.4
TEMPERATURE COEFFICIENTS (mV/°C)
IC, COLLECTOR CURRENT (A)
μ
0.25 A
0.6
Figure 8. Current Gain
103
IC = 0.1 A
+2.0
*APPLIES FOR IC/IB ≤
+1.5
+1.0
TJ = 100°C to 150°C
+0.5
*qVC FOR VCE(sat)
0
−55 °C to +100°C
−0.5
−1.0
−1.5
qVB FOR VBE
−2.0
−2.5
2.0 3.0 5.0
+0.5
hFE@VCE + 1.0V
2
VBE, BASE−EMITTER VOLTAGE (VOLTS)
10
20 30
50
100 200 300 500
1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 12. Collector Cut−Off Region
Figure 13. Temperature Coefficients
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5
2N4921, 2N4922, 2N4923
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
−B−
U
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
C
Q
M
−A−
1 2 3
H
K
J
V
G
R
0.25 (0.010)
S
M
A
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5_ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
−−−
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
−−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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2N4921/D