TN6707A TN6707A NPN General Purpose Amplifier • These devices is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A • Sourced from process 39. C BE TO-226 Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage FPN660 80 Units V VCBO VEBO Collector-Base Voltage 100 V Emitter-Base Voltage 5.0 IC Collector Current V 1.2 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Conditions Min. Max. Units V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IE = 100µA, IE = 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 1.0mA, IC = 0 5.0 ICBO Collector-Base Cutoff Current VCB = 80V, IE = 0 0.1 µA IEBO Emitter-Base Cutoff Current VEB = 5.0V, IC = 0 0.1 µA V On Characteristics * hFE DC Current Gain VCE = 2.0V, IC = 50mA VCE = 2.0V, IC = 250mA VCE = 2.0V, IC = 500mA 40 40 25 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA IC = 1.0A, IB = 100mA 0.5 1.0 V V VBE(on) Base-Emitter On Voltage VCE = 2.0V, IC = 1.0A 1.5 V Small Signal Characteristics hfe Output Capacitance VCE = 5.0V, IC = 200mA, f = 20MHz 2.5 fT Current Gain Bandwidth Product VCE = 5.0V, IC = 50mA, f = 20MHz 50 20 MHz MHz * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics TA=25°C unless otherwise noted PD Symbol Parameter Total Device Dissipation Derate above 25°C Max. 1.0 8.0 Units W mW/°C RθJC RθJA Thermal Resistance, Junction to Case 50 °C/W Thermal Resistance, Junction to Ambient 125 °C/W ©2003 Fairchild Semiconductor Corporation Rev. A, January 2003 TN6707A Package Dimensions TO-226 S4.70-4.32; S1.52-1.02; 2" TYP S7.73-7.10; S7.87-7.37; 2" TYP S1.65-1.27; 0.51 S0.760.36; S15.61-14.47; S0.51-0.36; S0.48-0.30; S1.40-1.14; PIN S1.40-1.14; 99 95 1 E E 2 B C 3 C B S4.45-3.81; 5" TYP 1 2 3 TO-226AE (95,99) S2.41-2.13; For leadformed option ordering, refer to Tape & Reel data information. Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, January 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I2