LA733P, LA733Q Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –48 Vdc Collector-Base Voltage VCBO –60 Vdc Emitter-Base Voltage VEBO –5.0 Vdc Collector Current – Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C –55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg 3 BASE 1 EMITTER 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W 3 TO–92 CASE 29 STYLE 14 MARKING DIAGRAMS LA 733x YWW LA733x x Y WW = Specific Device Code = P or Q = Year = Work Week ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 August, 2001 – Rev. 1 1 Package Shipping LA733P TO–92 5000 Units/Box LA733Q TO–92 5000 Units/Box Publication Order Number: LA733P/D LA733P, LA733Q ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO –48 – – Vdc Collector–Base Breakdown Voltage (IC = –10 Adc, IE = 0) V(BR)CBO –60 – – Vdc Emitter–Base Breakdown Voltage (IE = –10 Adc, IC = 0) V(BR)EBO –5.0 – – Vdc Collector–Base Leakage Current (VCB = –60 V) ICBO – – –100 nAdc Emitter–Base Leakage Current (VEB = –5.0 V, IC = 0) IEBO – – –100 nAdc Collector–Emitter Leakage Current (VCE = –50 V) ICEO – – –1.0 A 200 135 – – 400 270 ON CHARACTERISTICS DC Current Gain (IC = –1.0 mAdc, VCE = –6.0 Vdc) hFE LA733P LA733Q – Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) VCE(sat) – – –0.3 Vdc Base–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) VBE(sat) – – –0.9 Vdc Base–Emitter On Voltage (IC = –1.0 mAdc, VCE = –6.0 Vdc) VBE(on) –0.55 – –0.68 Vdc fT 100 – 450 MHz Common–Base Output Capacitance (VCB = –60 Vdc, IC = 0, f = 1.0 MHz) Cob – – 7.0 pF Noise Figure (IC = –0.3 mAdc, VCE = –6.0 Vdc, RG = 10 k, f = 100 mHz) NF – – 18 dB DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (IC = –10 mAdc, VCE = –6.0 Vdc, f = 20 MHz) http://onsemi.com 2 LA733P, LA733Q -1.0 VCE = -10 V TA = 25°C 1.5 -0.9 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 VCE(sat) @ IC/IB = 10 -0.1 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) 10 400 300 Cib 7.0 200 VCE = -10 V TA = 25°C 150 100 80 -50 -100 Figure 2. “Saturation” and “On” Voltages C, CAPACITANCE (pF) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 -0.2 0.3 0.2 -0.2 60 40 5.0 TA = 25°C 3.0 Cob 2.0 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 IC, COLLECTOR CURRENT (mAdc) 1.0 -0.4 -0.6 -50 Figure 3. Current–Gain — Bandwidth Product 0.3 r b′, BASE SPREADING RESISTANCE (OHMS) 0.5 VCE = -10 V f = 1.0 kHz TA = 25°C 0.1 0.05 0.03 0.01 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -1.0 -2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS) -20 -30 -40 Figure 4. Capacitances 1.0 hob, OUTPUT ADMITTANCE (OHMS) TA = 25°C -0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 -10 150 140 130 VCE = -10 V f = 1.0 kHz TA = 25°C 120 110 100 -0.1 Figure 5. Output Admittance -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 IC, COLLECTOR CURRENT (mAdc) -5.0 Figure 6. Base Spreading Resistance http://onsemi.com 3 -10 LA733P, LA733Q PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 4 LA733P/D