ONSEMI BC327-025

ON Semiconductor
BC327,
BC327-16,
BC327-25,
BC327-40
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC327
Unit
Collector–Emitter Voltage
VCEO
–45
Vdc
Collector–Base Voltage
VCBO
–50
Vdc
Emitter–Base Voltage
VEBO
–5.0
Vdc
Collector Current – Continuous
IC
–800
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/°C
TJ, Tstg
–55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
°C/W
Thermal Resistance, Junction to Case
RJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
–45
–
–
–50
–
–
–5.0
–
–
–
–
–100
–
–
–100
–
–
–100
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA, IB = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage
(IC = –100 µA, IE = 0)
V(BR)CES
Emitter–Base Breakdown Voltage
(IE = –10 A, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –30 V, IE = 0)
ICBO
Collector Cutoff Current
(VCE = –45 V, VBE = 0)
ICES
Emitter Cutoff Current
(VEB = –4.0 V, IC = 0)
IEBO
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 2
1
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
Publication Order Number:
BC327/D
BC327, BC327–16, BC327–25, BC327–40
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
100
100
160
250
40
–
–
–
–
–
630
250
400
630
–
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –100 mA, VCE = –1.0 V)
hFE
–
BC327
BC327–16
BC327–25
BC327–40
(IC = –300 mA, VCE = –1.0 V)
Base–Emitter On Voltage
(IC = –300 mA, VCE = –1.0 V)
VBE(on)
–
–
–1.2
Vdc
Collector–Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA)
VCE(sat)
–
–
–0.7
Vdc
Cob
–
11
–
pF
fT
–
260
–
MHz
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = –10 V, IE = 0, f = 1.0 MHz)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Current–Gain – Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03
P(pk)
SINGLE PULSE
0.01
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.02
0.01
0.001
θJC(t) = (t) θJC
θJC = 100°C/W MAX
θJA(t) = r(t) θJA
θJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t, TIME (SECONDS)
1.0
2.0
Figure 1. Thermal Response
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2
5.0
10
20
50
100
BC327, BC327–16, BC327–25, BC327–40
-1000
IC, COLLECTOR CURRENT (mA)
1.0 s
1.0 ms
dc
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED VCEO)
-3.0
-10
-30
VCE, COLLECTOR-EMITTER VOLTAGE
-10
-1.0
VCE = -1.0 V
TA = 25°C
hFE, DC CURRENT GAIN
100 µs
dc
TC = 25°C
-100
1000
TJ = 135°C
100
10
-0.1
-100
-1.0
-10
-100
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
-1.0
-1.0
TA = 25°C
TJ = 25°C
-0.8
-0.8
V, VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Active Region – Safe Operating Area
IC =
-500 mA
-0.6
-0.4
IC = -300 mA
-0.2
0
-0.01
-0.1
-1.0
-10
IB, BASE CURRENT (mA)
VBE(on) @ VCE = -1.0 V
-0.6
-0.4
VCE(sat) @ IC/IB = 10
0
-1.0
-100
-1000
100
+1.0
θVC for VCE(sat)
-1.0
-1.0
-10
-100
IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 4. Saturation Region
-2.0
VBE(sat) @ IC/IB = 10
-0.2
IC = -100 mA
IC = -10 mA
0
-1000
θVB for VBE
-10
-100
IC, COLLECTOR CURRENT
Cib
10
Cob
1.0
-0.1
-1000
Figure 6. Temperature Coefficients
-1.0
-10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
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3
-100
BC327, BC327–16, BC327–25, BC327–40
PACKAGE DIMENSIONS
TO–92 (TO–226)
CASE 29–11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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4
BC327/D