ON Semiconductor High Voltage Transistors BF420 BF422 NPN Silicon MAXIMUM RATINGS Rating Symbol BF420 BF422 Unit Collector–Emitter Voltage VCEO 300 250 Vdc Collector–Base Voltage VCBO 300 250 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29–11, STYLE 14 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 2 3 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 300 250 — — 300 250 — — 5.0 5.0 — — — — 0.01 — — — 100 — Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO BF420 BF422 Collector–Base Breakdown Voltage (IC = 100 Adc, IE = 0) Vdc V(BR)CBO BF420 BF422 Emitter–Base Breakdown Voltage (IE = 100 Adc, IC = 0) Vdc V(BR)EBO BF420 BF422 Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Vdc µAdc ICBO BF420 BF422 Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO BF420 BF422 nAdc 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 2 1 Publication Order Number: BF420/D BF420 BF422 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max 50 50 — — — 0.5 — 2.0 60 — — 1.6 Unit ON CHARACTERISTICS DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) hFE BF420 BF422 Collector–Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) — Vdc Vdc SMALL–SIGNAL CHARACTERISTICS CurrentGain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) fT Common Emitter Feedback Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) MHz Cre http://onsemi.com 2 pF BF420 BF422 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 -55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f, T CURRENT-GAIN BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 80 70 60 50 40 30 20 10 1.0 1000 TJ = 25°C VCE = 20 V f = 20 MHz Figure 2. Capacitance 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current–Gain – Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 0.6 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. ”ON” Voltages http://onsemi.com 3 BF420 BF422 PACKAGE DIMENSIONS CASE 029–11 (TO–226AA) ISSUE AJ A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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