ONSEMI NSBA114EDXV6T1

NSBA114EDXV6T1,
NSBA114EDXV6T5 SERIES
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBA114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low−power surface mount applications where board space is
at a premium.
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(3)
(2)
R1
Q2
R2
(4)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are Pb−Free Devices
1
Symbol
Value
Unit
VCBO
−50
Vdc
Collector-Emitter Voltage
VCEO
−50
Vdc
IC
−100
mAdc
Symbol
Max
Unit
PD
357
2.9
mW
mW/°C
350
°C/W
THERMAL CHARACTERISTICS
Total Device Dissipation @ TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
SOT−563
CASE 463A
PLASTIC
STYLE 1
xx M G
G
Collector-Base Voltage
Characteristic
(One Junction Heated)
(6)
MARKING DIAGRAM
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Collector Current
R1
(5)
MAXIMUM RATINGS
Rating
R2
Q1
Features
•
•
•
•
(1)
RqJA
xx = Device Code
(Refer to page 2)
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSBA1xxxDXV6T1
Package
Shipping †
SOT−563* 4000/Tape & Reel
NSBA1xxxDXV6T1G SOT−563* 4000/Tape & Reel
Characteristic
(Both Junctions Heated)
Total Device Dissipation @ TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Junction and Storage Temperature
Range
Symbol
Max
Unit
PD
500
4.0
mW
mW/°C
RqJA
250
°C/W
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 6
1
NSBA1xxxDXV6T5
SOT−563* 8000/Tape & Reel
NSBA1xxxDXV6T5G SOT−563* 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
**This package is inherently Pb−Free.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NSBA114EDXV6/D
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
DEVICE MARKING AND RESISTOR VALUES
Package
Marking
R1 (kW)
R2 (kW)
NSBA114EDXV6T1 / T5
Device*
SOT−563
0A
10
10
NSBA124EDXV6T1 / T5
SOT−563
0B
22
22
NSBA144EDXV6T1 / T5
SOT−563
0C
47
47
NSBA114YDXV6T1 / T5
SOT−563
0D
10
47
0E
10
∞
NSBA114TDXV6T1 / T5
(Note 2)
SOT−563
NSBA143TDXV6T1 / T5
(Note 2)
SOT−563
0F
4.7
∞
NSBA113EDXV6T1 / T5
(Note 2)
SOT−563
0G
1.0
1.0
NSBA123EDXV6T1 / T5
(Note 2)
SOT−563
0H
2.2
2.2
NSBA143EDXV6T1 / T5
(Note 2)
SOT−563
0J
4.7
4.7
NSBA143ZDXV6T1 / T5
(Note 2)
SOT−563
0K
4.7
47
NSBA124XDXV6T1 / T5
(Note 2)
SOT−563
0L
22
47
NSBA123JDXV6T1 / T5
(Note 2)
SOT−563
0M
2.2
47
NSBA115EDXV6T1 / T5
(Note 2)
SOT−563
0N
100
100
NSBA144WDXV6T1
(Note 2)
SOT−563
0P
47
22
*The “G’’ suffix indicates Pb−Free package available. Refer to Ordering Information Table on page 1.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = −50 V, IE = 0)
ICBO
−
−
−100
nAdc
Collector-Emitter Cutoff Current (VCE = −50 V, IB = 0)
ICEO
−
−
−500
nAdc
Emitter-Base Cutoff Current
(VEB = −6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.18
−0.13
−0.2
−0.05
−0.13
mAdc
Collector-Base Breakdown Voltage (IC = −10 mA, IE = 0)
V(BR)CBO
−50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = −2.0 mA, IB = 0)
V(BR)CEO
−50
−
−
Vdc
VCE(sat)
−
−
−0.25
Vdc
OFF CHARACTERISTICS
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
ON CHARACTERISTICS (Note 3)
Collector-Emitter Saturation Voltage (IC = −10 mA, IE = −0.3 mA)
(IC = −10 mA, IB = −5 mA) NSBA113EDXV6T1/NSBA123EDXV6T1
(IC = −10 mA, IB = −1 mA)
NSBA114TDXV6T1/NSBA143TDXV6T1
NSBA143EDXV6T1/NSBA143ZDXV6T1/NSBA124XDXV6T1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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2
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
130
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
VOH
−4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
ON CHARACTERISTICS (Note 3) (continued)
DC Current Gain
(VCE = −10 V, IC = −5.0 mA)
Output Voltage (on)
(VCC = −5.0 V, VB = −2.5 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = −3.5 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = −5.5 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = −4.0 V, RL = 1.0 kW)
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
VOL
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA144EDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
Output Voltage (off) (VCC = −5.0 V, VB = −0.5 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = −0.05 V, RL = 1.0 kW)
NSBA113EDXV6T1
(VCC = −5.0 V, VB = − 0.25 V, RL = 1.0 kW)
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA123EDXV6T1
NSBA143ZDXV6T1
Input Resistor
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
Resistor Ratio
NSBA114EDXV6T1/NSBA124EDXV6T1/
NSBA144EDXV6T1/NSBA115EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1/NSBA143TDXV6T1
NSBA113EDXV6T1/NSBA123EDXV6T1/NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA144WDXV6T1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
Vdc
R1/R2
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
ALL NSBA114EDXV6T1 SERIES DEVICES
PD, POWER DISSIPATION (mW)
300
250
200
150
100
RqJA = 490°C/W
50
0
−50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
TYPICAL ELECTRICAL CHARACTERISTICS
— NSBA114EDXV6T1
1
IC/IB = 10
TA=−25°C
0.1
25°C
75°C
0.01
20
40
IC, COLLECTOR CURRENT (mA)
0
Figure 1. Derating Curve − ALL DEVICES
50
Figure 2. VCE(sat) versus IC
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1
4
VCE = 10 V
C ob , CAPACITANCE (pF)
hFE , DC CURRENT GAIN (NORMALIZED)
1000
TA=75°C
25°C
100
10
−25°C
1
10
IC, COLLECTOR CURRENT (mA)
3
2
1
0
100
f = 1 MHz
lE = 0 V
TA = 25°C
0
Figure 3. DC Current Gain
100
25°C
75°C
TA=−25°C
10
1
0.1
0.01
0.001
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
50
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
100
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
8
9
Figure 5. Output Current versus Input Voltage
TA=−25°C
10
25°C
75°C
1
0.1
10
VO = 0.2 V
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
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4
50
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA124EDXV6T1
IC/IB = 10
1
25°C
TA=−25°C
75°C
0.1
0.01
0
20
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
1
10
Figure 8. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
3
2
1
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
0.001
50
Figure 9. Output Capacitance
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
4
0
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
10
25°C
75°C
1
0
10
8
9
10
Figure 10. Output Current versus Input Voltage
TA=−25°C
0.1
100
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
0
25°C
−25°C
100
10
50
40
1000
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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5
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
1
1000
IC/IB = 10
TA=−25°C
25°C
75°C
0.1
0.01
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144EDXV6T1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
0.6
0.4
0.2
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
−25°C
1
0.1
0.01
0.001
50
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
9
10
Figure 15. Output Current versus Input Voltage
100
10
25°C
TA=75°C
10
Figure 14. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 16. Input Voltage versus Output Current
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6
50
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
180
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114YDXV6T1
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
140
−25°C
120
100
80
60
40
20
0
80
TA=75°C
VCE = 10 V
160
1
2
4
6
Figure 17. VCE(sat) versus IC
100
TA=75°C
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
10
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
TA=−25°C
75°C
1
0
10
8
10
Figure 20. Output Current versus Input Voltage
10
0.1
25°C
−25°C
1
50
Figure 19. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
80 90 100
Figure 18. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 21. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114TDXV6T1
HFE, DC CURRENT GAIN (NORMALIZED)
1000
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 22. DC Current Gain
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA143TDXV6T1
HFE, DC CURRENT GAIN (NORMALIZED)
1000
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 23. DC Current Gain
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8
100
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
0.1
75°C
25°C
−25°C
IC/IB = 10
0.01
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA115EDXV6T1
1000
75°C
TA = −25°C
100
25°C
10
VCE = 10 V
1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 24. Maximum Collector Voltage versus
Collector Current
Figure 25. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
1.0
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
25°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = −25°C
1
VO = 5 V
0
1
2
3
4
TA = −25°C
10
VO = 0.2 V
75°C
0
2
6
7
8
9
10
Figure 27. Output Current versus Input Voltage
100
1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 26. Output Capacitance
25°C
75°C
10
0.1
0
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.2
0
100
4
6
8
10 12
14
16
IC, COLLECTOR CURRENT (mA)
18
Figure 28. Input Voltage versus Output Current
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9
20
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144WDXV6T1
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = −25°C
75°C
0.1
25°C
IC/IB = 10
0.01
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
50
1000
75°C
TA = −25°C
100
25°C
VCE = 10 V
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 29. Maximum Collector Voltage versus
Collector Current
Figure 30. DC Current Gain
100
1.2
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
1.0
0.8
0.6
0.4
0.2
75°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = −25°C
10
25°C
1
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0
6
7
8
9
10
11
Figure 32. Output Current versus Input Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 31. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
0
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 33. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
6
5
1
2
A
L
4
E
−Y−
3
b
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
DIM
A
b
C
D
E
e
L
HE
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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