ONSEMI MMUN2232LT1

MMUN2211LT1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT-23 package which is designed for low power surface mount
applications.
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PIN 3
COLLECTOR
(OUTPUT)
R1
PIN 1
BASE
(INPUT)
R2
PIN 2
EMITTER
(GROUND)
Features
• Simplifies Circuit Design
• Reduces Board Space and Component Count
• Pb−Free Packages are Available
MARKING DIAGRAM
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
246 (Note 1)
400 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
°C/W
Thermal Resistance, Junction-to-Ambient
RqJA
508 (Note 1)
311 (Note 2)
°C/W
Thermal Resistance, Junction-to-Lead
RqJL
174 (Note 1)
208 (Note 2)
°C/W
Junction and Storage Temperature
Range
TJ, Tstg
−55 to +150
°C
SOT−23
CASE 318
STYLE 6
A8x M G
G
1
A8x = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 11 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ minimum pad
2. FR−4 @ 1.0 x 1.0 inch pad
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 7
Publication Order Number:
MMUN2211LT1/D
MMUN2211LT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
4.0
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3), (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
350
350
−
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2241LT1
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2241LT1
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1
(IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/
MMUN2238LT1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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2
Vdc
MMUN2211LT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
VOH
4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.88
130
kW
R1/R2
0.8
0.17
−
−
0.8
0.055
0.38
1.0
0.21
−
−
1.0
0.1
0.47
1.2
0.25
−
−
1.2
0.185
0.56
ON CHARACTERISTICS (Note 4)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k W)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k W)
(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k W)
VOL
MMUN2211LT1
MMUN2212LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2213LT1
MMUN2241LT1
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k W)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k W)
MMUN2230LT1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k W)
MMUN2215LT1
MMUN2216LT1
MMUN2233LT1
MMUN2238LT1
Input Resistor
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2241LT1
Resistor Ratio
MMUN2211LT1/MMUN2212LT1/MMUN2213LT1
MMUN2214LT1
MMUN2215LT1/MMUN2216LT1/MMUN2238LT1
MMUN2241LT1
MMUN2230LT1/MMUN2231LT1/MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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3
Vdc
MMUN2211LT1 Series
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
250
200
150
100
1
IC/IB = 10
TA = −25°C
25°C
75°C
0.1
0.01
RqJA= 625°C/W
50
0
−50
0
50
100
0.001
150
0
40
60
IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
Figure 2. VCE(sat) vs. IC
VCE = 10 V
TA = 75°C
25°C
−25°C
100
10
1
10
IC, COLLECTOR CURRENT (mA)
100
3
2
1
0
100
f = 1 MHz
lE = 0 A
TA = 25°C
0
20
30
50
40
Figure 4. Output Capcitance
10
25°C
10
10
VR, REVERSE BIAS VOLTAGE (VOLTS)
VO = 0.2 V
75°C
TA = −25°C
25°C
Vin, INPUT VOLTAGE (V)
TA = −25°C
1
0.1
0.01
0.001
80
4
1000
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
20
TA, AMBIENT TEMPERATURE (5°C)
Cob, CAPACITANCE (pF)
hFE, DC CURRENT GAIN (NORMALIZED)
PD, POWER DISSIPATION (MILLIWATTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
75°C
1
VO = 5 V
0
1
2
3
4
5
6
7
8
9
0.1
0
10
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current vs. Input Voltage
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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4
50
MMUN2211LT1 Series
−
1
TA = −25°C
IC/IB = 10
25°C
75°C
0.1
0.01
0.001
0
20
60
40
IC, COLLECTOR CURRENT (mA)
80
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212LT1
1000
VCE = 10 V
TA = 75°C
10
10
IC, COLLECTOR CURRENT (mA)
1
Figure 7. VCE(sat) vs. IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 A
TA = 25°C
2
1
75°C
25°C
TA = −25°C
10
1
0.1
0.01
VO = 5 V
0
0
10
20
30
50
40
0.001
0
2
4
6
8
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
100
Figure 8. DC Current Gain
4
3
−25°C
25°C
100
TA = −25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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5
50
10
MMUN2211LT1 Series
10
IC/IB = 10
TA = −25°C
75°C
25°C
1
0.1
0.01
0
20
40
60
80
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2213LT1
TA = 75°C
25°C
−25°C
100
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) vs. IC
Figure 13. DC Current Gain
100
0.8
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 A
TA = 25°C
0.6
0.4
0.2
10
20
30
25°C
10
TA = −25°C
1
0.1
0.01
VO = 5 V
0.001
50
40
75°C
0
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
4
6
8
Vin, INPUT VOLTAGE (VOLTS)
Figure 15. Output Current vs. Input Voltage
100
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
VCE = 10 V
IC, COLLECTOR CURRENT (mA)
1
0
0
1000
TA = −25°C
25°C
75°C
10
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage vs. Output Current
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6
50
10
MMUN2211LT1 Series
1
IC/IB = 10
TA = −25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
80
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214LT1
300
VCE = 10
TA = 75°C
250
25°C
200
−25°C
150
100
50
0
1
2
6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
4
Figure 17. VCE(sat) vs. IC
Figure 18. DC Current Gain
100
f = 1 MHz
lE = 0 A
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
10
VO = 5 V
1
0
2
4
6
8
Vin, INPUT VOLTAGE (VOLTS)
Figure 20. Output Current vs. Input Voltage
Figure 19. Output Capacitance
10
TA = −25°C
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
4
25°C
75°C
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage vs. Output Current
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7
50
10
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2232LT1
1000
VCE = 10 V
IC/IB =10
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (V)
1
TA = 75°C
0.1
25°C
−25°C
0.01
TA = 75°C
100
10
1
0.001
4
12
8
16
20
24
0
28
25
IC, COLLECTOR CURRENT (mA)
50
75
100
125
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) vs. IC
Figure 23. DC Current Gain
6
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 A
TA = 25°C
5
4
3
2
1
0
VO = 5 V
75°C
25°C
10
1
TA = −25°C
0.1
0.01
0
10
20
30
40
50
60
0
2
4
6
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 24. Output Capacitance
Figure 25. Output Current vs. Input Voltage
10
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
25°C
−25°C
TA = −25°C
75°C
1
0.1
0
25°C
10
20
IC, COLLECTOR CURRENT (mA)
Figure 26. Output Voltage vs. Input Current
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8
30
8
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2233LT1
1000
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (V)
1
25°C
100
75°C
25°C
TA = −25°C
0.01
TA = −25°C
10
VCE = 10 V
1
0.001
2
7
12
17
27
22
1
32
100
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) vs. IC
Figure 28. DC Current Gain
4
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 A
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
75°C
TA = −25°C
10
1
0.1
25°C
VO = 5 V
0.01
0
10
20
30
40
50
60
0
4
2
6
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 29. Output Capacitance
Figure 30. Output Current vs. Input Voltage
10
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
75°C
TA = −25°C
25°C
75°C
1
0.1
0
6
24
12
18
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage vs. Output Current
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9
30
8
MMUN2211LT1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 33. Open Collector Inverter: Inverts
the Input Signal
Figure 34. Inexpensive, Unregulated
Current Source
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10
MMUN2211LT1 Series
ORDERING INFORMATION
Device
R1(k)
R2(k)
Package
MMUN2211LT1
10
10
SOT−23
MMUN2211LT1G
10
10
SOT−23
(Pb−Free)
10
10
SOT−23
10
10
SOT−23
(Pb−Free)
22
22
SOT−23
22
22
SOT−23
(Pb−Free)
47
47
SOT−23
47
47
SOT−23
(Pb−Free)
10
47
SOT−23
10
47
SOT−23
(Pb−Free)
10
∞
SOT−23
10
∞
SOT−23
(Pb−Free)
4.7
∞
SOT−23
4.7
∞
SOT−23
(Pb−Free)
1.0
1.0
SOT−23
1.0
1.0
SOT−23
(Pb−Free)
2.2
2.2
SOT−23
2.2
2.2
SOT−23
(Pb−Free)
4.7
4.7
SOT−23
4.7
4.7
SOT−23
(Pb−Free)
4.7
47
SOT−23
4.7
47
SOT−23
(Pb−Free)
MMUN2234LT1
22
47
SOT−23
MMUN2234LT1G
22
47
SOT−23
(Pb−Free)
22
47
SOT−23
MMUN2234LT3G
22
47
SOT−23
(Pb−Free)
MMUN2238LT1
2.2
∞
SOT−23
2.2
∞
SOT−23
(Pb−Free)
100
∞
SOT−23
100
∞
SOT−23
(Pb−Free)
MMUN2211LT3
Marking
A8A
MMUN2211LT3G
MMUN2112LT1
MMUN2212LT1G
A8B
MMUN2213LT1
MMUN2213LT1G
A8C
MMUN2214LT1
MMUN2214LT1G
A8D
MMUN2215LT1
MMUN2215LT1G
A8E
MMUN2216LT1
MMUN2216LT1G
A8F
MMUN2230LT1
MMUN2230LT1G
A8G
MMUN2231LT1
MMUN2231LT1G
A8H
MMUN2232LT1
MMUN2232LT1G
A8J
MMUN2233LT1
MMUN2233LT1G
MMUN2234LT3
MMUN2238LT1G
A8K
A8L
A8R
MMUN2241LT1
MMUN2241LT1G
A8U
Shipping†
3000 / Tape & Reel
10,000 / Tape & Reel
3000 / Tape & Reel
10,000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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11
MMUN2211LT1 Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
D
3
1
E HE
2
DIM
A
A1
b
c
D
E
e
L
HE
e
A
b
A1
C
L
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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