BC556B, BC557, A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC556 BC557 BC558 Collector-Base Voltage Vdc –65 –45 –30 VCBO BC556 BC557 BC558 Emitter-Base Voltage Vdc Collector Current – Continuous Collector Current – Peak IC ICM –100 –200 mAdc Base Current – Peak IBM –200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD 625 5.0 mW mW/°C 1.5 12 Watts mW/°C –55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 TJ, Tstg THERMAL CHARACTERISTICS Semiconductor Components Industries, LLC, 2001 June, 2000 – Rev. 1 2 3 EMITTER –80 –50 –30 –5.0 Characteristic 1 Vdc VEBO Operating and Storage Junction Temperature Range 2 BASE °C/W 1 3 CASE 29 TO–92 STYLE 17 ORDERING INFORMATION Device Package Shipping BC556B TO–92 5000 Units/Box BC556BRL1 TO–92 2000/Tape & Reel BC556BZL1 TO–92 2000/Ammo Pack BC557 TO–92 5000 Units/Box BC557ZL1 TO–92 2000/Ammo Pack BC557A TO–92 5000 Units/Box BC557AZL1 TO–92 2000/Ammo Pack BC557B TO–92 5000 Units/Box BC557BRL1 TO–92 2000/Tape & Reel BC557BZL1 TO–92 2000/Ammo Pack BC557C TO–92 5000 Units/Box BC557CZL1 TO–92 2000/Ammo Pack BC558B TO–92 5000 Units/Box BC558BRL TO–92 2000/Tape & Reel BC558BRL1 TO–92 2000/Tape & Reel BC558BZL1 TO–92 2000/Ammo Pack BC558C TO–92 5000 Units/Box BC558CRL1 TO–92 2000/Tape & Reel BC558ZL1 TO–92 2000/Ammo Pack BC558CZL1 TO–92 2000/Ammo Pack Publication Order Number: BC556/D BC556B, BC557, A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max –65 –45 –30 – – – – – – –80 –50 –30 – – – – – – –5.0 –5.0 –5.0 – – – – – – – – – – – – –2.0 –2.0 –2.0 – – – –100 –100 –100 –4.0 –4.0 –4.0 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –100 µAdc) Emitter–Base Breakdown Voltage (IE = –100 Adc, IC = 0) Collector–Emitter Leakage Current (VCES = –40 V) (VCES = –20 V) (VCES = –20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 http://onsemi.com 2 nA µA BC556B, BC557, A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max – – – 120 120 180 420 – – – 90 150 270 – 170 290 500 120 180 300 – – – 800 220 460 800 – – – – – – –0.075 –0.3 –0.25 –0.3 –0.6 –0.65 – – –0.7 –1.0 – – –0.55 – –0.62 –0.7 –0.7 –0.82 – – – 280 320 360 – – – – 3.0 6.0 – – – 2.0 2.0 2.0 10 10 10 125 125 240 450 – – – – 900 260 500 900 Unit ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 V) (IC = –2.0 mAdc, VCE = –5.0 V) (IC = –100 mAdc, VCE = –5.0 V) hFE A Series Device B Series Devices C Series Devices BC557 A Series Device B Series Devices C Series Devices A Series Device B Series Devices C Series Devices Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see Note 1) (IC = –100 mAdc, IB = –5.0 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –100 mAdc, IB = –5.0 mAdc) VBE(sat) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) VBE(on) – V V V SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Output Capacitance (VCB = –10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = –0.2 mAdc, VCE = –5.0 V, RS = 2.0 k, f = 1.0 kHz, ∆f = 200 Hz) Small–Signal Current Gain (IC = –2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC557 A Series Device B Series Devices C Series Devices – Note 1: IC = –10 mAdc on the constant base current characteristics, which yields the point IC = –11 mAdc, VCE = –1.0 V. http://onsemi.com 3 pF BC556B, BC557, A, B, C, BC558B, C BC557/BC558 1.5 -1.0 TA = 25°C -0.9 VCE = -10 V TA = 25°C -0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 TA = 25°C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 -0.02 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Cib TA = 25°C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 4. Base–Emitter Temperature Coefficient 10 7.0 -55°C to +125°C 1.2 Figure 3. Collector Saturation Region C, CAPACITANCE (pF) -50 -100 1.0 -2.0 0 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain -0.8 VBE(sat) @ IC/IB = 10 -20 -30 -40 400 300 200 150 VCE = -10 V TA = 25°C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product http://onsemi.com 4 BC556B, BC557, A, B, C, BC558B, C BC556 TJ = 25°C VCE = -5.0 V TA = 25°C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -0.1 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage -2.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20 -1.0 -1.4 -1.8 -2.6 -3.0 -0.2 f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25°C Cib 10 8.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 10. Base–Emitter Temperature Coefficient 40 6.0 -55°C to 125°C -2.2 Figure 9. Collector Saturation Region 20 θVB for VBE VCE = -5.0 V 500 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) -50 -100 Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product http://onsemi.com 5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BC556B, BC557, A, B, C, BC558B, C 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.07 0.05 0.05 SINGLE PULSE P(pk) SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.03 0.02 0.01 ZJC(t) = (t) RJC RJC = 83.3C/W MAX ZJA(t) = r(t) RJA RJA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RJC(t) 0.1 0.2 0.5 1.0 2.0 10 5.0 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10 Figure 13. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 TA = 25°C -50 3 ms The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. TJ = 25°C BC558 BC557 BC556 -10 -5.0 -2.0 -1.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region – Safe Operating Area http://onsemi.com 6 BC556B, BC557, A, B, C, BC558B, C PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER http://onsemi.com 7 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- BC556B, BC557, A, B, C, BC558B, C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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