BC487, BC487B High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 60 Vdc Collector − Base Voltage VCBO 60 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 BASE 3 EMITTER MARKING DIAGRAM TO−92 CASE 29 STYLE 17 1 2 3 BC48 7B AYWW G G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W BC487B A Y WW G = = = = = Device Code Assembly Location Year Work Week Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† TO−92 5000 Units / Box BC487G TO−92 (Pb−Free) 5000 Units / Box BC487B TO−92 5000 Units / Box TO−92 (Pb−Free) 5000 Units / Box TO−92 2000/Tape & Reel Device BC487 BC487BG BC487BRL1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 1 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC487/D BC487, BC487B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) V(BR)CEO 60 − − Vdc Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 60 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc ICBO − − 100 nAdc 40 60 160 15 − − 260 − − 400 400 − − − 0.2 0.3 0.5 − − − 0.85 0.9 1.2 − fT − 200 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 7.0 − pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib − 50 − pF OFF CHARACTERISTICS Collector Cutoff Current (VCB = 40 Vdc, IE = 0) ON CHARACTERISTICS* DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) hFE − BC487 BC487B (IC = 1.0 Adc, VCE = 5.0 Vdc)* Collector −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc)(1) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. TURN−ON TIME 100 +10 V 0 tr = 3.0 ns RB Vin 5.0 mF +VBB VCC +40 V −1.0 V 5.0 ms TURN−OFF TIME 100 VCC +40 V 100 RL OUTPUT RB Vin 5.0 mF *CS < 6.0 pF 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 100 RL OUTPUT *CS < 6.0 pF 300 200 80 VCE = 2.0 V TJ = 25°C TJ = 25°C 60 C, CAPACITANCE (pF) f, T CURRENT−GAIN BANDWIDTH PRODUCT (MHz) BC487, BC487B 100 70 50 40 Cibo 20 10 8.0 6.0 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 4.0 0.1 200 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current−Gain − Bandwidth Product 50 100 Figure 3. Capacitance 1.0 k 700 500 ts 300 t, TIME (ns) 200 100 70 50 30 20 tf VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 5.0 7.0 10 tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Switching Time 1.0 0.7 0.5 D = 0.5 0.2 0.1 0.3 0.2 P(pk) t1 0.02 0.1 0.07 0.05 t2 0.01 SINGLE PULSE 0.03 SINGLE PULSE ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA 0.02 0.01 1.0 2.0 5.0 10 20 50 100 200 500 t, TIME (ms) 1.0k Figure 5. Thermal Response http://onsemi.com 3 2.0k DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−469) TJ(pk) − TC = P(pk) ZqJC(t) TJ(pk) − TA = P(pk) ZqJA(t) 5.0k 10k 20k 50k 100k IC, COLLECTOR CURRENT (mA) BC487, BC487B 1.0 k 700 500 100 ms 1.0 ms 1.0 s 300 200 TC = 25°C TA = 25°C 100 70 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 30 20 10 1.0 BC489 20 30 50 2.0 3.0 5.0 7.0 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 70 100 Figure 6. Active Region − Safe Operating Area 400 hFE , DC CURRENT GAIN TJ =125°C VCE = 1.0 V 200 25°C −55°C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 1.0 TJ = 25°C V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 1.0 TJ = 25°C 0.8 0.6 IC = 10 mA 50 mA 100 mA 250 mA 500 mA 0.4 0.2 0 0.05 Figure 8. “On” Voltages 0.1 0.2 0.5 2.0 5.0 1.0 10 IC, COLLECTOR CURRENT (mA) 20 Figure 9. Collector Saturation Region http://onsemi.com 4 50 BC487, BC487B −1.0 −1.2 −0.8 RθVB, TEMPERATURE COEFFICIENT (mV/°C) −0.8 V, VOLTAGE (VOLTS) TJ = 25°C −1.6 RqVB for VBE −2.0 VBE(sat) @ IC/IB = 10 −0.6 VBE(on) @ VCE = −1.0 V −0.4 −0.2 −2.4 VCE(sat) @ IC/IB = 10 −2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 0 −0.5 500 −1.0 −2.0 −1.0 −0.8 TJ = 25°C −1.2 −0.8 −1.6 −0.6 −0.4 −500 Figure 11. “On” Voltages RθVB, TEMPERATURE COEFFICIENT (mV/°C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 10. Base−Emitter Temperature Coefficient −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) IC = −10 mA RqVB for VBE −2.0 −50 mA −100 mA −250 mA −500 mA −2.4 −0.2 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 IB, BASE CURRENT (mA) −10 −20 −2.8 −0.5 −50 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 Figure 13. Base−Emitter Temperature Coefficient Figure 12. Collector Saturation Region http://onsemi.com 5 BC487, BC487B PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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