NTD70N03R Power MOSFET 72 A, 25 V, N-Channel DPAK Features •Planar HD3e Process for Fast Switching Performance •Low RDS(on) to Minimize Conduction Loss •Low CISS to Minimize Driver Loss •Low Gate Charge •Pb-Free Packages are Available http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX 25 V 5.6 mW 72 A N-Channel D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Value Unit Drain-to-Source Voltage VDSS 25 Vdc Gate-to-Source Voltage - Continuous VGS ±20 Vdc Thermal Resistance - Junction-to-Case Total Power Dissipation @ TC = 25°C Drain Current - Continuous @ TC = 25°C, Chip - Continuous @ TC = 25°C, Limited by Package - Continuous @ TA = 25°C, Limited by Wires - Single Pulse (tp = 10 ms) RqJC PD 2.4 62.5 °C/W W ID ID ID IDM 72.0 62.8 32 140 A A A A Thermal Resistance - Junction-to-Ambient (Note1) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C RqJA 80 °C/W PD ID 1.87 12.0 W A Thermal Resistance - Junction-to-Ambient (Note2) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C RqJA 110 °C/W PD ID 1.36 10.0 W A Operating and Storage Temperature Range TJ, Tstg -55 to 175 °C Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1 mH, RG = 25 W) EAS 71.7 mJ Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 s TL 260 °C G S MARKING DIAGRAMS 4 1 2 3 DPAK CASE 369AA STYLE 2 4 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 0.5 sq. in. pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. 4 Drain YWW T70 N03G Symbol 2 1 3 Drain Gate Source 4 Drain YWW T70 N03G Parameter 2 3 DPAK CASE 369D STYLE 2 70N03 Y WW G 1 2 3 Gate Drain Source = Device Code = Year = Work Week = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2008 March, 2008 - Rev. 10 1 Publication Order Number: NTD70N03R/D NTD70N03R ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics Symbol Min Typ Max 25 - 28 20.5 - - - 1.5 10 - - ±100 1.0 - 1.5 4.0 2.0 - - 8.1 5.6 13 8.0 - 27 - CISS - 1333 - COSS - 600 - CRSS - 218 - td(on) - 6.9 - tr - 1.3 - td(off) - 18.4 - tf - 5.5 - Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(br)DSS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain-to-Source On-Resistance (Note 3) (VGS = 4.5 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 20 Adc) RDS(on) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 15 Adc) Vdc mV/°C mW gFS Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) Transfer Capacitance pF SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time (VGS = 10 Vdc, VDD = 10 Vdc, ID = 36 Adc, RG = 3 W) Fall Time Gate Charge (VGS = 5 Vdc, ID = 36 Adc, VDS = 10 Vdc) (Note 3) QT - 13.2 - QGS - 3.3 - QDS - 6.5 - - 0.86 0.73 1.2 - trr - 27.9 - ta - 14.8 - tb - 13.1 - QRR - 19 - ns nC SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 3) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) VSD Reverse Recovery Time (IS = 36 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 Vdc ns nC NTD70N03R TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 V 5V 8V 6V 4.5 V 125 4.2 V 4V 3.8 V 100 75 3.6 V 3.4 V 3.2 V 3V 2.8 V 2.6 V 50 25 2.4 V 0 0 2 4 6 100 75 50 TJ = 25°C 25 10 8 TJ = 175°C TJ = -55°C 2 0 4 6 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics ID = 72 A TJ = 25°C 0.04 0.03 0.02 0.01 0 2 4 6 8 10 0.016 VGS = 10 V TJ = 175°C 0.012 0.008 TJ = 25°C 0.004 TJ = -55°C 0 10 30 50 70 90 110 130 150 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage 1,000,000 2.0 VGS = 0 V ID = 36 A VGS = 10 V 100,000 IDSS, LEAKAGE (nA) 1.8 125 0 0.05 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) VDS ≥ 10 V ID, DRAIN CURRENT (AMPS) 150 150 TJ = 25°C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 175 1.6 1.4 1.2 1.0 TJ = 175°C 10,000 1000 TJ = 100°C 100 0.8 0.6 -50 -25 10 0 25 50 75 100 125 150 175 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 25 3000 VDS = 0 V TJ = 25°C CISS 2500 C, CAPACITANCE (pF) VGS = 0 V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) NTD70N03R CRSS 2000 CISS 1500 1000 COSS 500 CRSS 0 10 5 0 VGS 5 10 15 20 VDS 10 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation IS, SOURCE CURRENT (AMPS) 100 t, TIME (ns) 8 VDD = 10 V 6 QGS 4 QGD 2 ID = 36 A TJ = 25°C 0 0 10 20 QG, TOTAL GATE CHARGE (nC) 30 Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge 80 1000 td(off) 10 td(on) VDS = 10 V ID = 36 A VGS = 10 V tf tr 1 1 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V TJ = 25°C 70 60 50 40 30 20 10 0 0.4 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.6 Figure 10. Diode Forward Voltage versus Current 100 120 10 ms VGS = 20 V SINGLE PULSE TC = 25°C 10 80 100 ms Ider (%) I D, DRAIN CURRENT (AMPS) QT 1 ms 40 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc 1 0.1 0 0 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 100 Tmb (°C) 150 200 Figure 12. Normalized Continuous Drain Current as a function of Mounting Base Temperature http://onsemi.com 4 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) NTD70N03R 1.0 D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 SINGLE PULSE 0.01 1.0E-05 1.0E-04 t1 t2 DUTY CYCLE, D = t1/t2 1.0E-03 1.0E-02 t, TIME (ms) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 1.0E-01 1.0E+00 1.0E+01 Figure 13. Thermal Response ORDERING INFORMATION Package Shipping† DPAK-3 75 Units / Rail NTD70N03RG DPAK-3 (Pb-Free) 75 Units / Rail NTD70N03RT4 DPAK-3 2500 / Tape & Reel DPAK-3 (Pb-Free) 2500 / Tape & Reel NTD70N03R-1 DPAK-3 Straight Lead 75 Units / Rail NTD70N03R-1G DPAK-3 Straight Lead (Pb-Free) 75 Units / Rail Order Number NTD70N03R NTD70N03RT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe‐ cifications Brochure, BRD8011/D. http://onsemi.com 5 NTD70N03R PACKAGE DIMENSIONS DPAK CASE 369AA-01 ISSUE A -TC B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F H J L R S U V Z H 3 U F J L D STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 --0.035 0.050 0.155 --- T SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --0.89 1.27 3.93 --- NTD70N03R PACKAGE DIMENSIONS DPAK CASE 369D-01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 -TSEATING PLANE K J F H D G DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- 3 PL 0.13 (0.005) M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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