DIODES DMN5L06VA

DMN5L06V/VA
NEW PRODUCT
Lead-free Green
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
·
·
·
Dual N-Channel MOSFET
Low On-Resistance
SOT-563
Very Low Gate Threshold Voltage
A
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
B C
Ultra-Small Surface Mount Package
“Green” Device (Note 3)
D
G
Mechanical Data
Case: SOT-563
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
·
·
Marking: Date Code and Type Code, See Page 2
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
Lead Free By Design/RoHS Compliant (Note 2)
·
·
Dim
M
K
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
H
Terminals Connections: See Diagram
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
0.10
0.30
0.20
M
0.10
0.18
¾
All Dimensions in mm
L
D2
G1
S1
D2
S1
G1
S2
G2
D1
G2
S2
D1
Terminals: Finish ¾ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Maximum Ratings
DMN5L06VA
(KAG Type Code)
DMN5L06V
(KAH Type Code)
@ TA = 25°C unless otherwise specified
Symbol
Value
Units
Drain-Source Voltage
Characteristic
VDSS
50
V
Drain-Gate Voltage RGS £ 1.0MW
VDGR
50
V
Gate-Source Voltage
Continuous
Pulsed
VGSS
±20
±40
V
Drain Current (Note 1)
Continuous
ID
280
mA
Drain Current (Note 1)
Pulsed
IDM
1.5
A
Pd
150
mW
RqJA
833
°C/W
Tj, TSTG
-55 to +150
°C
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30604 Rev. 7 - 2
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DMN5L06V/VA
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
50
¾
¾
V
VGS = 0V, ID = 10mA
IDSS
¾
¾
0.1
500
µA
VDS = 50V, VGS = 0V
IGSS
¾
¾
±20
nA
VGS = ±20V, VDS = 0V
VGS(th)
0.49
¾
1.2
V
VDS = VGS, ID = 250mA
RDS (ON)
¾
¾
1.6
2.2
3
4
W
VGS = 2.7V, ID = 0.2A,
VGS = 1.8V, ID = 50mA
ID(ON)
0.5
1.0
¾
A
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TC = 25°C
@ TC = 125°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
|Yfs|
200
¾
¾
mS
Source-Drain Diode Forward Voltage
VSD
0.5
¾
1.4
V
Input Capacitance
Ciss
¾
¾
50
pF
Output Capacitance
Coss
¾
¾
25
pF
Reverse Transfer Capacitance
Crss
¾
¾
5.0
pF
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
1.5
VDS = 25V, VGS = 0V
f = 1.0MHz
1
VGS = 10V
8V
6V
5V
4V
3V
1.2
VDS = 10V
Pulsed
8V
10V
6V
5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics
4V
0.9
3V
0.6
0.1
TA = 150° C
TA = 125° C
TA = 85° C
TA = 25° C
0.01
TA = 0° C
0.3
TA = -25° C
TA = -55° C
0.001
0
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS30604 Rev. 7 - 2
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
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DMN5L06V/VA
10
VDS = 10V
VGS(th), GATE THRESHOLD VOLTAGE (V)
VGS = 10V
Pulsed
ID = 1mA
0.7
Pulsed
TA = 85° C
TA = 125° C
0.6
TA = 150° C
0.5
0.4
1
0.3
TA = -55° C
TA = 25° C
0.2
TA = 0° C
TA = -25° C
0.1
0
-75 -50
-25
25
0
50
75
0.1
0.001
100 125 150
Tch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
10
0.1
0.01
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
1
8
VGS = 5V
Pulsed
TA = 25° C
Pulsed
7
TA = 85° C
TA = 125° C
6
TA = 150° C
5
1
4
TA = -55° C
TA = 25° C
TA = 0° C
3
TA = -25° C
2
ID = 280mA
1
0.1
ID = 140mA
0
1
0.1
0.01
0.001
5
0
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
10
15
20
VGS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
2.5
1
VGS = 10V
Pulsed
2.3
VGS = 0V
Pulsed
2.1
1.9
ID = 280mA
1.7
ID = 140mA
1.5
1.3
1.1
0.9
IDR, REVERSE DRAIN CURRENT (A)
NEW PRODUCT
0.8
TA = 150° C
0.1
TA = 125° C
TA = 85° C
0.01
TA = 25° C
TA = -25° C
0.7
TA = -55° C
0.5
-50
-25
0
25
50
75
100
0.001
125 150
Tch, CHANNEL TEMPERATURE (° C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
DS30604 Rev. 7 - 2
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0
1
0.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
DMN5L06V/VA
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
IDR, REVERSE DRAIN CURRENT (A)
VGS = 10V
0.1
VGS = 0V
0.01
TA = 25°C
Pulsed
0.001
0.5
0
1
TA = -55° C
VDS = 10V
Pulsed
TA = -25° C
TA = 0° C
0.1
TA = 25° C
TA = 85° C
TA = 125° C
TA = 150° C
0.01
1
0.01
0.001
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
1
0.1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
250
Pd, POWER DISSIPATION (mW)
NEW PRODUCT
1
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (° C)
Fig. 11 Derating Curve - Total
Ordering Information
Notes:
Device
Packaging
Shipping
DMN5L06V-7
SOT-563
3000/Tape & Reel
DMN5L06VA-7
SOT-563
3000/Tape & Reel
4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
D2
G1
S1
KAH YM
S2
Notes:
(Note 5)
G2
D1
(Note 6)
KAH = DMN5L06V Product Type Marking Code
(See Note 6)
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
S1
D2
G1
KAG YM
G2
S2
D1
KAG = DMN5L06VA Product Type Marking Code
(See Note 6)
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
Date Code Key
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30604 Rev. 7 - 2
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DMN5L06V/VA