DIODES DMN601TK

DMN601TK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
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Mechanical Data
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Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Up To 2kV
"Green" Device (Note 4)
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
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SOT-523
Drain
D
Gate
TOP VIEW
ESD Protected up to 2kV
Maximum Ratings
G
Gate
Protection Source
Diode
EQUIVALENT CIRCUIT
S
TOP VIEW
Pin Out Configuration
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Symbol
PD
RθJA
TJ, TSTG
Value
150
833
-65 to +150
Units
mW
°C/W
°C
Continuous
Pulsed (Note 3)
Drain Current (Note 1)
Thermal Characteristics
Units
V
V
ID
Value
60
±20
300
800
mA
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
⎯
⎯
⎯
⎯
⎯
⎯
1.0
±10
V
μA
μA
VGS = 0V, ID = 10μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
1.0
RDS (ON)
⎯
2.5
2.0
3.0
V
Static Drain-Source On-Resistance
|Yfs|
80
1.6
⎯
⎯
⎯
⎯
ms
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
VDS =10V, ID = 0.2A
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
50
25
5.0
pF
pF
pF
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
1.
2.
3.
4.
5.
Ω
Test Condition
VDS = 25V, VGS = 0V
f = 1.0MHz
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMN601TK
Document number: DS30654 Rev. 5 - 2
1 of 4
www.diodes.com
March 2009
© Diodes Incorporated
ID, DRAIN CURRENT (A)
DMN601TK
VGS = 10V
8V
6V
5V
4V
3V
10V
8V
6V
1.0
5V
0.8
4V
0.6
0.4
0.2
3V
0
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2
10
VDS = 10V
ID = 1mA
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
Pulsed
1.5
1
0.5
0
-50
-25
75 100 125
0
25
50
Tch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
1
0.1
150
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
10
0
1
VGS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
DMN601TK
Document number: DS30654 Rev. 5 - 2
2 of 4
www.diodes.com
March 2009
© Diodes Incorporated
DMN601TK
VGS = 10V
Pulsed
VGS = 0V
Pulsed
IDR, REVERSE DRAIN CURRENT (A)
RDS(ON), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (Ω)
ID = 300mA
ID = 150mA
TA = 125° C
TA = 150° C
TA = 85° C
TA = 25° C
T A = 0°C
TA = -25°C
TA = -55°C
0
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
TCH, CHANNEL TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
IDR, REVERSE DRAIN CURRENT (A)
VGS = 10V
TA= 25°C
Pulsed
VGS = 0V
VGS = 10V
Pulsed
TA = 25°C
TA = 150°C
TA = -55°C
TA = 85°C
1
1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
Ordering Information
(Note 6)
Part Number
DMN601TK-7
Notes:
Case
SOT-523
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K7K
Date Code Key
Year
Code
Month
Code
2005
S
Jan
1
DMN601TK
Document number: DS30654 Rev. 5 - 2
2006
T
Feb
2
Mar
3
YM
K7K = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
2007
U
Apr
4
2008
V
May
5
Jun
6
3 of 4
www.diodes.com
2009
W
Jul
7
2010
X
Aug
8
Sep
9
2011
Y
Oct
O
2012
Z
Nov
N
Dec
D
March 2009
© Diodes Incorporated
DMN601TK
Package Outline Dimensions
A
SOT-523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
0.50
⎯
⎯
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
0°
8°
α
⎯
All Dimensions in mm
B C
G
H
K
M
N
J
L
D
Suggested Pad Layout
Y
Z
C
X
Dimensions Value (in mm)
Z
1.8
X
0.4
Y
0.51
C
1.3
E
0.7
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN601TK
Document number: DS30654 Rev. 5 - 2
4 of 4
www.diodes.com
March 2009
© Diodes Incorporated