DMN601VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) • • • • • • SOT-563 ESD Protected up to 2kV TOP VIEW D2 G1 S1 S2 G2 D1 TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Pulsed (Note 3) Drain Current (Note 1) Thermal Characteristics Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. Symbol Pd RθJA Tj, TSTG Value 250 500 -65 to +150 Units mW °C/W °C mA @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Gate-Source Leakage Units V V ID Value 60 ±20 305 800 @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 250 ±500 ±100 V nA 1.0 1.6 2.5 V 2.0 3.0 Ω ⎯ 1.4 ms V 50 25 5.0 pF pF pF IGSS VGS(th) RDS (ON) ⎯ |Yfs| VSD ⎯ 0.5 ⎯ ⎯ 284 ⎯ Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nA Test Condition VGS = 0V, ID = 10μA VDS = 50V, VGS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 0.5A VGS = 4.5V, ID = 200mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN601VK Document number: DS30655 Rev. 4 - 2 1 of 4 www.diodes.com October 2007 © Diodes Incorporated ID, DRAIN CURRENT (A) VGS = 10V 8V 6V 5V 4V 3V 1.0 8V 6V 5V 0.8 4V 0.6 0.4 0.2 0 3V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2 10 VDS = 10V ID = 1mA RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) Pulsed 1.5 1 0.5 0 -50 -25 75 100 125 0 25 50 TCH, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 1 0.1 150 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT DMN601VK 0 1 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN601VK Document number: DS30655 Rev. 4 - 2 2 of 4 www.diodes.com October 2007 © Diodes Incorporated RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) IDR, REVERSE DRAIN CURRENT (A) VGS = 0V Pulsed TA = 125°C TA = 150°C TA = 85°C TA = 25°C TA = 0°C TA = -25°C TA = -55°C 0 |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TCH, CHANNEL TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature VGS = 10V IDR, REVERSE DRAIN CURRENT (A) NEW PRODUCT DMN601VK TA= 25°C Pulsed VGS = 0V VGS = 10V Pulsed TA = 25°C TA = 150°C TA = -55°C TA = 85°C 1 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current Ordering Information (Note 6) Part Number DMN601VK-7 Notes: Case SOT-563 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information G1 D2 S1 K7K = Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September K7K YM S2 Date Code Key Year G2 D1 2005 2006 2007 2008 2009 2010 2011 2012 S T U V W X Y Z Code Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DMN601VK Document number: DS30655 Rev. 4 - 2 3 of 4 www.diodes.com October 2007 © Diodes Incorporated DMN601VK Package Outline Dimensions NEW PRODUCT A B C D G M K H SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm L Suggested Pad Layout E Z E C G Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C 1.7 E 0.5 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN601VK Document number: DS30655 Rev. 4 - 2 4 of 4 www.diodes.com October 2007 © Diodes Incorporated