DIODES DMN600V

DMN600V
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
·
·
Dual N-Channel MOSFET
Low On-Resistance
SOT-563
Low Gate Threshold Voltage
A
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
B C
Ultra-Small Surface Mount Package
Dim
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
Lead Free By Design/RoHS Compliant (Note 3)
D
G
SEE NOTE 1
Mechanical Data
M
K
·
·
Case: SOT-563
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
Terminals: Lead bearing terminal plating available. See
Ordering information Page 2, Note 6
·
·
·
Marking: See Page 2
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
H
Terminals Connections: See Diagram
G1
S1
S2
G2
D1
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
0.10
0.30
0.20
M
0.10
0.18
0.11
All Dimensions in mm
L
D2
0.50
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol
Value
Units
Drain-Source Voltage
Characteristic
VDSS
60
V
Drain-Gate Voltage RGS £ 1.0MW
VDGR
60
V
Gate-Source Voltage (Note 3)
Continuous
Pulsed
VGSS
±20
±40
V
Drain Current (Note 3)
Continuous
ID
280
mA
Drain Current (Note 3)
Pulsed
IDM
1.5
A
Pd
150
mW
RqJA
833
°C/W
Tj, TSTG
-55 to +150
°C
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added Lead.
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DMN600V
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Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
60
70
¾
V
VGS = 0V, ID = 10mA
IDSS
¾
¾
25
250
nA
VDS = 50V, VGS = 0V
IGSS
¾
¾
±100
nA
VGS = ±20V, VDS = 0V
VGS(th)
1.0
¾
2.5
V
VDS = VGS, ID = 250mA
RDS (ON)
¾
¾
¾
¾
7.5
13.5
W
VGS = 5V, ID = 0.05A,
VGS = 10V, ID = 0.5A, Tj = 125°C
ID(ON)
0.5
1.0
¾
A
VGS = 10V, VDS = 7.5V
gFS
80
¾
¾
mS
Input Capacitance
Ciss
¾
¾
50
pF
Output Capacitance
Coss
¾
¾
25
pF
Reverse Transfer Capacitance
Crss
¾
¾
5.0
pF
Turn-On Delay Time
tD(ON)
¾
¾
20
ns
Turn-Off Delay Time
tD(OFF)
¾
¾
20
ns
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TC = 25°C
@ TC = 85°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Satic Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
VDS = 10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
VDS = 25V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Ordering Information
Notes:
VDD = 30V, ID = 0.2A,
RL = 150W, VGEN = 10V,
RGEN = 25W
(Note 5)
Device
Packaging
Shipping
DMN600V-7
SOT-563
3000/Tape & Reel
4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
6. "-L" suffix on part number indicates Pb/Sn terminal plating. "-L" version is a Non Lead-Free, Non RoHS-compliant device.
Marking Information
D2
G1
S1
KBS = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
KBS YM
S2
G2
D1
Date Code Key
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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DMN600V
Pd, POWER DISSIPATION (mW)
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Derating Curve - Total
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DMN600V