SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR FCX717 ISSSUE 1 - MAY 1999 FEATURES * 2W POWER DISSIPATION * * * * 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 12mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 77m at 3A Partmarking Detail - 717 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ** ICM -10 A Continuous Collector Current IC -3 A Base Current IB -500 mA Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX717 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -12 -35 MAX. V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -12 -25 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 -8.5 V IE=-100µA Collector Cut-Off Current ICBO -100 nA VCB=-10V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector Emitter Cut-Off Current ICES -100 nA VCES=-10V Collector-Emitter Saturation Voltage VCE(sat) -12 -110 -230 -20 -150 -320 mV mV mV IC=-0.1A, IB=-10mA* IC=-1A, IB=-10mA* IC=-3A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.92 -1.05 V IC=-3A, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) -0.85 -1.0 V IC=-3A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 300 160 60 45 475 450 240 100 70 Transition Frequency fT 80 110 Output Capacitance Cobo 21 Turn-On Time t(on) Turn-Off Time t(off) IC=-10mA, VCE=-2V* IC=-0.1A, VCE=-2V* IC=-3A, VCE=-2V* IC=-8A, VCE=-2V* IC=-10A, VCE=-2V* MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz 70 ns 130 ns VCC=-6V, IC=-2A IB1=IB2=50mA 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%