SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT753 TYPICAL CHARACTERISTICS 0.6 td Switching time - (Volts) 0.4 IC /IB=10 V 0.3 0.2 tf ts ns ns 140 E COMPLEMENTARY TYPE 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0 0 0.0001 0.001 0.01 0.1 1 PARTMARKING DETAIL ts tf 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.4 - (Volts) - Gain 175 VCE =2V 1.0 V h 0.8 0.6 0 1 10 0.0001 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 Single Pulse Test at Tamb=25°C I - Collector Current (A) 10 1.0 VC E=2V 0.8 V - (Volts) 1.2 0.6 1 DC 0.1 SYMBOL VALUE UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg SYMBOL MIN. -120 V(BR)CBO 2 W -55 to +150 °C µ UNIT V CONDITIONS. IC=-100µA V IC=-10mA* V(BR)EBO -5 V IE=-100µA µA µA VBE(sat) -0.17 -0.30 -0.9 -0.1 -10 -0.1 -0.3 -0.5 -1.25 V V V VCB=-100V VCB=-100V,Tamb=100°C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V* MHz IC=-50mA, VCE =-2V* IC=-500mA, VCE =-2V* IC=-1A, VCE =-2V* IC=-2A, VCE =-2V* IC=-100mA, VCE=-5V f=100MHz VCB =-10V f=1MHz IC=-500mA, VCC =-10V IB1=IB2=-50mA ICBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio IEBO VCE(sat) Transition Frequency fT hFE 1s 100 s MAX. -100 10ms 1ms TYP. V(BR)CEO 100ms C 0.4 PARAMETER PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current IC /IB =10 75 0.1 FZT753 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.2 125 0.01 C B ABSOLUTE MAXIMUM RATINGS. tr 10 225 FZT653 td 0.1 0 C IB1=IB2 =IC /10 tr 0.5 FZT753 ISSUE 4 FEBRUARY 1996 FEATURES * Low saturation voltage * Excellent hFE specified up to 2A 70 100 55 25 100 200 200 170 55 140 µA 300 0.01 0.0001 0.001 0.01 0.1 1 10 0.1 1 10 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area VBE(on) v IC 3 - 237 100 30 pF Cobo ton 40 ns toff 600 ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device Output Capacitance Switching Times 3 - 236 SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT753 TYPICAL CHARACTERISTICS 0.6 td Switching time - (Volts) 0.4 IC /IB=10 V 0.3 0.2 tf ts ns ns 140 E COMPLEMENTARY TYPE 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0 0 0.0001 0.001 0.01 0.1 1 PARTMARKING DETAIL ts tf 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.4 - (Volts) - Gain 175 VCE =2V 1.0 V h 0.8 0.6 0 1 10 0.0001 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 Single Pulse Test at Tamb=25°C I - Collector Current (A) 10 1.0 VC E=2V 0.8 V - (Volts) 1.2 0.6 1 DC 0.1 SYMBOL VALUE UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg SYMBOL MIN. -120 V(BR)CBO 2 W -55 to +150 °C µ UNIT V CONDITIONS. IC=-100µA V IC=-10mA* V(BR)EBO -5 V IE=-100µA µA µA VBE(sat) -0.17 -0.30 -0.9 -0.1 -10 -0.1 -0.3 -0.5 -1.25 V V V VCB=-100V VCB=-100V,Tamb=100°C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V* MHz IC=-50mA, VCE =-2V* IC=-500mA, VCE =-2V* IC=-1A, VCE =-2V* IC=-2A, VCE =-2V* IC=-100mA, VCE=-5V f=100MHz VCB =-10V f=1MHz IC=-500mA, VCC =-10V IB1=IB2=-50mA ICBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio IEBO VCE(sat) Transition Frequency fT hFE 1s 100 s MAX. -100 10ms 1ms TYP. V(BR)CEO 100ms C 0.4 PARAMETER PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current IC /IB =10 75 0.1 FZT753 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.2 125 0.01 C B ABSOLUTE MAXIMUM RATINGS. tr 10 225 FZT653 td 0.1 0 C IB1=IB2 =IC /10 tr 0.5 FZT753 ISSUE 4 FEBRUARY 1996 FEATURES * Low saturation voltage * Excellent hFE specified up to 2A 70 100 55 25 100 200 200 170 55 140 µA 300 0.01 0.0001 0.001 0.01 0.1 1 10 0.1 1 10 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area VBE(on) v IC 3 - 237 100 30 pF Cobo ton 40 ns toff 600 ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device Output Capacitance Switching Times 3 - 236