SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FZT657 TYPICAL CHARACTERISTICS 1.8 - Normalised Gain (%) 1.2 IC /IB=10 1.0 0.8 V 0.6 0.4 0.2 0 0.01 0.1 1 10 h - (Volts) 1.4 E 80 40 ABSOLUTE MAXIMUM RATINGS. 20 0 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 10 1.2 VCE=5V - (Volts) 1.0 V 0.6 0.8 0.6 0.4 0.01 1 0.1 1 0.4 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 td IB1=IB2=IC/10 tr VCE=10V tf µs 1.4 µs 3 Switching time DC 100ms 10ms 1ms 300µs 1.0 2 0.8 tf 0.6 1 0.4 td 0.2 0.001 ts ts 1.2 0.01 tr 0 1 10 100 1000 0.01 0 0.1 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 3 - 214 SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 300 Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V 1 A Peak Pulse Current ICM Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown V(BR)EBO Voltage Single Pulse Test at Tamb=25°C 0.1 PARAMETER 0.5 A 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.0 V 0.8 C B 60 IC/IB=10 - (Volts) PARTMARKING DETAIL - FZT657 VCE=5V 0.01 1.2 C COMPLEMENTARY TYPE - FZT757 100 1.6 FZT657 ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage 1 TYP. MAX. UNIT CONDITIONS. 300 V IC=100µA 300 V IC=10mA* 5 V IE=100µA Collector Cut-Off Current ICBO 0.1 µA VCB=200V Emitter Cut-Off Current IEBO 0.1 µA VEB=3V Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=100mA, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=100mA, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=100mA, VCE =5V* Static Forward Current Transfer Ratio hFE 40 50 Transition Frequency fT 30 Output Capacitance Cobo IC=10mA, VCE =5V* IC=100mA, VCE =5V* 20 MHz IC=10mA, VCE =20V f=20MHz pF VCB =20V, f=1MHz *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 213 SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FZT657 TYPICAL CHARACTERISTICS 1.8 - Normalised Gain (%) 1.2 IC /IB=10 1.0 0.8 V 0.6 0.4 0.2 0 0.01 0.1 1 10 h - (Volts) 1.4 E 80 40 ABSOLUTE MAXIMUM RATINGS. 20 0 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 10 1.2 VCE=5V - (Volts) 1.0 V 0.6 0.8 0.6 0.4 0.01 1 0.1 1 0.4 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 td IB1=IB2=IC/10 tr VCE=10V tf µs 1.4 µs 3 Switching time DC 100ms 10ms 1ms 300µs 1.0 2 0.8 tf 0.6 1 0.4 td 0.2 0.001 ts ts 1.2 0.01 tr 0 1 10 100 1000 0.01 0 0.1 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 3 - 214 SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 300 Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V 1 A Peak Pulse Current ICM Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown V(BR)EBO Voltage Single Pulse Test at Tamb=25°C 0.1 PARAMETER 0.5 A 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.0 V 0.8 C B 60 IC/IB=10 - (Volts) PARTMARKING DETAIL - FZT657 VCE=5V 0.01 1.2 C COMPLEMENTARY TYPE - FZT757 100 1.6 FZT657 ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage 1 TYP. MAX. UNIT CONDITIONS. 300 V IC=100µA 300 V IC=10mA* 5 V IE=100µA Collector Cut-Off Current ICBO 0.1 µA VCB=200V Emitter Cut-Off Current IEBO 0.1 µA VEB=3V Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=100mA, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=100mA, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=100mA, VCE =5V* Static Forward Current Transfer Ratio hFE 40 50 Transition Frequency fT 30 Output Capacitance Cobo IC=10mA, VCE =5V* IC=100mA, VCE =5V* 20 MHz IC=10mA, VCE =20V f=20MHz pF VCB =20V, f=1MHz *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 213