DMBT9022 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 · · · Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G G 1.78 2.05 H H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 A C TOP VIEW Mechanical Data · · Dim Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K1S Weight: 0.008 grams (approx.) B C E B D E M K J L L 0.45 0.61 M 0.076 0.178 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol DMBT9022 Unit Collector-Base Voltage Characteristic VCBO 50 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5.0 V IC 100 mA Collector Current - Continuous (Note 1) Pd 225 mW RqJA 556 K/W Tj, TSTG -55 to +150 °C Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 50 ¾ V IC = 50mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage OFF CHARACTERISTICS (Note 2) V(BR)EBO 5.0 ¾ V IE = 50mA, IC = 0 Collector Cutoff Current ICBO ¾ 500 nA VCB = 30V Emitter Cutoff Current IEBO ¾ 500 nA VEB = 4.0V ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage hFE 270 630 ¾ IC = 1.0mA, VCE = 6.0V VCE(SAT) ¾ 0.4 V IC = 50mA, IB = 5.0mA Cobo 2.0 Typ. 3.5 pF VCB = 12V, f = 1.0MHz, IE = 0 SMALL SIGNAL CHARACTERISTICS Output Capacitance Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30056 Rev. 2P-5 1 of 1 DMBT9022