DSS5540X 40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Ultra Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) • • • Case: SOT89 Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Weight: 0.055 grams (approximate) C SOT89 E B C C B E Top View Device Schematic Pin-Out Top Ordering Information (Note 3) Product DSS5540X-13 Notes: Marking ZPS54 Reel size (inches) 13 Tape width (mm) 12mm Quantity per reel 2,500 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, please go to our website at http://www.diodes.com Marking Information YWW ZPS54 DSS5540X Document number: DS31653 Rev. 2 - 2 ZPS54 = Product Type Marking Code = Manufacturer’s Code Marking YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code (01 – 53) 1 of 5 www.diodes.com October 2010 © Diodes Incorporated DSS5540X Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Collector Current Repetitive Peak Pulse Collector Current (Note 4) Continuous Collector Current Peak Pulse Base Current Continuous Base Current Symbol VCBO VCEO VEBO ICM ICRP IC IBM IB Value -40 -40 -6 -10 -5 -4 -2 -1 Unit V V V A A A A A Value 0.9 139 2 62.5 -55 to +150 Unit W °C/W W °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 5) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 5) @ TA = 25°C Power Dissipation (Note 6) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 6) @ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA PD RθJA TJ, TSTG 4. Pulse width ≤ 10ms; Duty cycle ≤ 0.2 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Device mounted on FR-4 PCB with 1inch2 copper pad layout. Notes: PD, POWER DISSIPATION (W) 2.4 2.0 1.6 Note 6 1.2 0.8 Note 5 0.4 0 0 50 100 150 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA (t) = r(t) * R θJA RθJA = 135°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DSS5540X Document number: DS31653 Rev. 2 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 2 Transient Thermal Response 2 of 5 www.diodes.com 100 1,000 10,000 October 2010 © Diodes Incorporated DSS5540X Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 7) Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current IEBO DC Current Gain (Note 6) hFE Collector-Emitter Saturation Voltage (Note 7) VCE(sat) Equivalent On-Resistance RCE(sat) Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-on Voltage Transition Frequency Collector Capacitance Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time VBE(on) fT Cc ton td tr toff ts tf Min -40 -40 -6 ⎯ ⎯ ⎯ 250 200 150 50 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 350 ⎯ ⎯ ⎯ ⎯ -70 -165 -150 -30 ⎯ ⎯ ⎯ ⎯ ⎯ 63 15 48 280 232 48 Max ⎯ ⎯ ⎯ -100 -50 -100 ⎯ ⎯ ⎯ ⎯ -120 -170 -160 -340 -375 -75 -1.1 -1.2 -1.0 ⎯ 105 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Unit V V V nA μA nA ⎯ mV mΩ V V MHz pF ns ns ns ns ns ns Test Conditions IC = -100μA IC = -10mA IE = -100μA VCB = -30V, IE = 0 VCB = -30V, IE = 0, TA = 150°C VEB = -5V, IC = 0 VCE = -2V, IC = -0.5A VCE = -2V, IC = -1A VCE = -2V, IC = -2A VCE = -2V, IC = -5A IC = -0.5A, IB = -5mA IC = -1A, IB = -10mA IC = -2A, IB = -200mA IC = -4A, IB = -200mA IC = -5A, IB = -500mA IC = -5A, IB = -500mA IC = -4A, IB = -200mA IC = -5A, IB = -500mA VCE = -2V, IC = -2A VCE = -10V, IC = -0.1A, f = 100MHz VCB = -10V, IE = 0A, f = 1MHz VCC = -10V, IC = -2A, IB1 = -IB2 = -200mA 7. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. Notes: 2.2 1,000 VCE = -1V 1.8 800 1.6 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 2.0 IB = -5mA 1.4 IB = -4mA 1.2 1.0 IB = -3mA 0.8 IB = -2mA 0.6 T A = 125°C 600 TA = 85°C 400 200 0.4 TA = 25°C T A = -55°C IB = -1mA 0.2 0 TA = 150°C 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage DSS5540X Document number: DS31653 Rev. 2 - 2 3 of 5 www.diodes.com 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical DC Current Gain vs. Collector Current October 2010 © Diodes Incorporated VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) DSS5540X VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1 IC/IB = 10 0.1 T A = 150°C TA = 125°C 0.01 T A = 85°C T A = 25°C T A = -55°C 0.001 0.0001 VCE = -2V 0.8 T A = -55°C 0.6 TA = 25°C 0.4 TA = 85°C 0.2 TA = 125°C T A = 150°C 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 1,000 f = 1MHz IC/IB = 10 1.0 CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 0.8 T A = -55°C 0.6 T A = 25°C 0.4 TA = 85°C Cibo 100 Cobo T A = 125°C TA = 150°C 0.2 10 0.1 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current 1 10 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Capacitance Characteristics 100 Package Outline Dimensions R0 D1 .2 00 C E H L B e B1 e1 8° (4 X ) A SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.43 D 4.40 4.60 D1 1.52 1.83 E 2.29 2.60 e 1.50 Typ e1 3.00 Typ H 3.94 4.25 L 0.89 1.20 All Dimensions in mm D DSS5540X Document number: DS31653 Rev. 2 - 2 4 of 5 www.diodes.com October 2010 © Diodes Incorporated DSS5540X Suggested Pad Layout X1 Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X2 (2x) Y1 Y3 Y4 Y2 Y C X (3x) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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