2DB1184Q PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) • • • • • Case: TO252-3L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.34 grams (approximate) COLLECTOR 3 4 2 BASE Top View Maximum Ratings 1 EMITTER Pin Out Configuration Device Schematic @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value -60 -50 -5 -3 -4.5 Unit V V V A A Symbol PD RθJC PD RθJA TJ, TSTG Value 15 8.3 1.2 104 -55 to +150 Unit W °C/W W °C/W °C Thermal Characteristics Characteristic Power Dissipation @TA = 25°C Thermal Resistance, Junction to Case Power Dissipation @TA = 25°C (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Output Capacitance Notes: 1. 2. 3. 4. @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO -60 -50 -5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 -1 V V V μA μA IC = -50μA, IE = 0 IC = -1mA, IB = 0 IE = -50μA, IC = 0 VCB = -40V, IE = 0 VEB = - 4V, IC = 0 VCE(SAT) VBE(SAT) hFE ⎯ ⎯ 120 ⎯ ⎯ ⎯ -1 -1.2 270 V V ⎯ IC = -2A, IB = -0.2A IC = -1.5A, IB = -0.15A VCE = -3V, IC = -0.5A fT ⎯ 110 ⎯ MHz Cobo ⎯ 26 ⎯ pF VCE = -5V, IC = -0.1A, f = 30MHz VCB = -10V, f = 1MHz No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum pad size recommended. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 2DB1184Q Document number: DS31504 Rev. 3 - 2 1 of 5 www.diodes.com August 2009 © Diodes Incorporated 2DB1184Q 1,000 400 VCE = -3V 800 IB = -5mA IB = -4mA 600 IB = -3mA 400 IB = -2mA TA = 150°C 300 hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (mA) 350 TA = 125°C 250 T A = 85°C 200 TA = 25°C 150 100 200 TA = -55°C IB = -1mA 50 0 0.001 0 0.1 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs. Collector Current 0.4 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.3 0.2 TA = 150°C TA = 125°C 0.1 T A = 85°C TA = 25°C T A = -55°C 0 0.001 1.2 VCE = -3V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C TA = 125°C 0.2 TA = 150°C 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 1.2 f = 1MHz IC/IB = 10 1.0 0.8 CAPACITANCE (pF) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 10 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage T A = -55°C TA = 25°C 0.6 TA = 85°C T A = 125°C 0.4 TA = 150°C Cibo 100 Cobo 0.2 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 2DB1184Q Document number: DS31504 Rev. 3 - 2 2 of 5 www.diodes.com 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics August 2009 © Diodes Incorporated 2DB1184Q 140 10 VCE = -5V f = 30MHz IC, COLLECTOR CURRENT (A) fT, GAIN-BANDWIDTH PRODUCT (MHz) Pw = 100µs (mA) 120 100 80 60 40 Pw = 100ms (mA) 1 Pw = 10ms (mA) Pw = 1ms (mA) DC (mA) 0.1 20 TA = 25°C Single Non-repetitive Pulse 0.01 0 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current 0.1 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 8 Safe Operating Area (Note 3) r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 110°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) 100 1,000 10,000 Fig. 9 Transient Thermal Response Ordering Information (Note 5) Part Number 2DB1184Q-13 Notes: Case TO252-3L Packaging 2500/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YYWW 2DB1184Q 2DB1184Q Document number: DS31504 Rev. 3 - 2 2DB1184Q = Product Type Marking Code = Manufacturers’ code marking YYWW = Date Code Marking YY = Last Digit of Year, (ex: 08 = 2008) WW = Week Code 01-52 3 of 5 www.diodes.com August 2009 © Diodes Incorporated 2DB1184Q Package Outline Dimensions E b3 L3 D b2 L4 e b A1 A H a SEATING PLANE L C2 TO252-3L Dim Min Typ Max A 2.19 2.29 2.39 A1 0.97 1.07 1.17 b 0.64 0.76 0.88 b2 0.76 0.95 1.14 b3 5.21 5.33 5.50 C2 0.45 0.51 0.58 D 6.00 6.10 6.20 E 6.45 6.58 6.70 e 2.286 Typ. H 9.40 9.91 10.41 L 1.40 1.59 1.78 L3 0.88 1.08 1.27 L4 0.64 0.83 1.02 a 0° 10° All Dimensions in mm Suggested Pad Layout X2 Dimensions Z X1 X2 Y1 Y2 C E1 Y2 C Z Y1 X1 2DB1184Q Document number: DS31504 Rev. 3 - 2 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 E1 4 of 5 www.diodes.com August 2009 © Diodes Incorporated 2DB1184Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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