DST3904DJ NEW PRODUCT 40V DUAL NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • VCEO = 40V IC = 200mA Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) “Green” Device (Note 2) Ultra Small Package • • • Case: SOT-963 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (approximate) SOT-963 Top View Device Schematic Ordering Information Device DST3904DJ-7 Notes: Packaging SOT-963 Shipping 10,000/Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com Marking Information T8 DST3904DJ Document number: DS32038 Rev. 2 - 2 T8 = Product Type Marking Code 1 of 6 www.diodes.com April 2010 © Diodes Incorporated DST3904DJ @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3) Symbol VCBO VCEO VEBO IC Value 60 40 6.0 200 Unit V V V mA Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C 3. Device mounted on FR-4 PCB with minimum recommended pad layout. r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 RθJA(t) = r(t) * RθJA RθJA = 370°C/W D = 0.9 D = 0.05 P(pk) D = 0.02 0.01 t1 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.01 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response 10 100 1,000 0.4 1,000 Single Pulse PD, POWER DISSIPATION (W) P(pk), PEAK TRANSIENT POWER (W) NEW PRODUCT Maximum Ratings RθJA(t) = r(t) * RθJA RθJA = 370°C/W 100 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 10 1 0.3 Note 3 0.2 0.1 0 0.1 0.00001 0.001 0.1 10 1,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation DST3904DJ Document number: DS32038 Rev. 2 - 2 2 of 6 www.diodes.com 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Dissipation vs. Ambient Temperature April 2010 © Diodes Incorporated DST3904DJ @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 ⎯ ⎯ ⎯ ⎯ ⎯ 50 50 V V V nA nA hFE 40 70 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.20 0.30 V Base-Emitter Saturation Voltage VBE(SAT) 0.65 ⎯ 0.85 0.95 V Cobo Cibo hie hre hfe hoe ⎯ ⎯ 1.0 0.5 100 1.0 4.0 8.5 10 8.0 400 40 pF pF kΩ -4 x 10 ⎯ μS Current Gain-Bandwidth Product fT 300 ⎯ MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf ⎯ ⎯ ⎯ ⎯ 35 35 200 50 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance ⎯ Test Condition IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2% Notes: 0.14 400 IB = 2mA 0.12 IB = 1.6mA IB = 1.8mA VCE = 5V T A = 150°C IB = 1.4mA IB = 1.2mA 0.10 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) NEW PRODUCT Electrical Characteristics IB = 1mA 0.08 IB = 0.8mA IB = 0.6mA 0.06 IB = 0.4mA 0.04 300 T A = 125°C TA = 85°C 200 100 T A = 25°C TA = -55°C IB = 0.2mA 0.02 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage DST3904DJ Document number: DS32038 Rev. 2 - 2 3 of 6 www.diodes.com 0 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current April 2010 © Diodes Incorporated DST3904DJ 1 1 IC/IB = 20 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.1 TA = 150°C TA = 125°C TA = 85°C T A = 25°C TA = -55°C TA = 125°C 0.1 T A = 85°C T A = -55°C 0.01 0.1 1.1 1.2 1.0 VCE = 5V 0.9 TA = -55°C 0.8 0.7 TA = 25°C 0.6 TA = 150°C 0.5 TA = 125°C 0.4 0.3 0.1 TA = 85°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current TA = 25°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) T A = 150°C 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current Gain = 10 1.0 0.8 0.6 TA = -55°C TA = 25°C TA = 150°C 0.4 0.2 0.1 TA = 125°C T A = 85°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current 10 TA = 25°C Single, Non-Repetitive Pulse IC, COLLECTOR CURRENT (A) NEW PRODUCT IC/IB = 10 1 PW = 1ms DC 0.1 PW = 100µs PW = 100ms PW = 10ms 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER CURRENT (V) Fig. 10 Safe Operation Area (NPN) DST3904DJ Document number: DS32038 Rev. 2 - 2 4 of 6 www.diodes.com April 2010 © Diodes Incorporated DST3904DJ Package Outline Dimensions D e1 NEW PRODUCT L E E1 e b (6 places) c A SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 C 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm A1 Suggest Pad Layout C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) DST3904DJ Document number: DS32038 Rev. 2 - 2 5 of 6 www.diodes.com April 2010 © Diodes Incorporated DST3904DJ NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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