ONSEMI EMX2DXV6T5

EMX2DXV6T5
Preferred Devices
Dual NPN General Purpose
Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-563 package which is
designed for low power surface mount applications, where board
space is at a premium.
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Features
•
•
•
•
DUAL NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
Reduces Board Space
High hFE, 210−460 (Typical)
Low VCE(sat), < 0.5 V
These are Pb−Free Devices
(3)
(2)
(1)
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
60
Vdc
Collector-Emitter Voltage
V(BR)CEO
50
Vdc
Emitter-Base Voltage
V(BR)EBO
7.0
Vdc
IC
100
mAdc
Collector Current − Continuous
Q2
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
(4) (5)
Symbol
Max
Unit
357 (Note 1)
2.9 (Note 1)
mW
mW/°C
RqJA
350 (Note 1)
°C/W
Symbol
Max
Unit
500 (Note 1)
4.0 (Note 1)
mW
mW/°C
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Q1
PD
MARKING
DIAGRAM
6
1
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction-to-Ambient
RqJA
250 (Note 1)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
(6)
SOT−563
CASE 463A
STYLE 2
3R M G
G
1
3R = Specific Device Code
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping †
EMX2DXV6T5
SOT−563
(Pb−Free)
8000/Tape & Reel
EMX2DXV6T5G
SOT−563
(Pb−Free)
8000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 2
1
Publication Order Number:
EMX2DXV6T5/D
EMX2DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
60
−
−
Vdc
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
−
−
Vdc
Emitter-Base Breakdown Voltage
(IE = 50 mAdc, IE = 0)
V(BR)EBO
7.0
−
−
Vdc
Collector-Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
−
−
0.5
mA
Emitter-Base Cutoff Current
(VEB = 7.0 Vdc, IB = 0)
IEBO
−
−
0.5
mA
−
−
0.4
120
−
560
fT
−
180
−
MHz
COB
−
2.0
−
pF
Characteristic
Collector-Emitter Saturation Voltage (Note 2)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
DC Current Gain (Note 3)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
hFE
Transition Frequency
(VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
Output Capacitance
(VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)
2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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2
Vdc
−
EMX2DXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS
1000
160 mA
TA = 25°C
50
140 mA
120 mA
40
100 mA
30
80 mA
20
60 mA
10
IB = 20 mA
TA = − 25°C
100
40 mA
0
0
2
4
6
VCE, COLLECTOR VOLTAGE (V)
10
0.1
8
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
2
900
TA = 25°C
800
COLLECTOR VOLTAGE (mV)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
Figure 1. IC − VCE
1.5
1
0.5
700
600
500
400
TA = 25°C
VCE = 5 V
300
200
100
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
0
0.2
100
1
5
10
20
40
60
80
100
150 200
Figure 4. On Voltage
20
7
6
C ob, CAPACITANCE (pF)
18
16
14
12
10
0.5
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Cib, INPUT CAPACITANCE (pF)
VCE = 10 V
TA = 25°C
TA = 75°C
DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
60
5
4
3
2
0
1
2
3
1
4
0
10
20
VEB (V)
VCB (V)
Figure 5. Capacitance
Figure 6. Capacitance
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3
30
40
EMX2DXV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
6
1
e
A
5
4
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
E
−Y−
HE
b 65 PL
0.08 (0.003)
DIM
A
b
C
D
E
e
L
HE
C
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
STYLE 2:
PIN 1. EMITTER 1
2. EMITTER2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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EMX2DXV6T5/D