2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. http://onsemi.com NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT Features • • • • • • Reduces Board Space High hFE, 210 −460 (typical) Low VCE(sat), < 0.5 V ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V Available in 8 mm, 7-inch/3000 Unit Tape and Reel These are Pb−Free Devices COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector-Base Voltage V(BR)CBO 50 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 5.0 Vdc IC 100 mAdc Symbol Max Unit Power Dissipation (Note 1) PD 260 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 ~ + 150 °C Rating Collector Current − Continuous THERMAL CHARACTERISTICS Rating Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 1 BASE 2 EMITTER MARKING DIAGRAM 3 2 SOT−723 CASE 631AA XXM 1 XX (B9 RM M = Specific Device Code = 2SC5658M3T5G = 2SC5658RM3T5G) = Date Code ORDERING INFORMATION Package Shipping† 2SC5658M3T5G SOT−723 (Pb−Free) 3000/Tape & Reel 2SC5658RM3T5G SOT−723 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 September, 2009 − Rev. 1 1 Publication Order Number: 2SC5658M3/D 2SC5658M3T5G, 2SC5658RM3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 − − Vdc Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0) V(BR)EBO 5.0 − − Vdc Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO − − 0.5 mA Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) IEBO − − 0.5 mA − − 0.4 120 215 − − 560 375 fT − 180 − MHz COB − 2.0 − pF Characteristic Collector-Emitter Saturation Voltage (Note 2) (IC = 60 mAdc, IB = 5.0 mAdc) DC Current Gain (Note 2) (VCE = 6.0 Vdc, IC = 1.0 mAdc) (VCE = 6.0 Vdc, IC = 1.0 mAdc) VCE(sat) hFE 2SC5658M3T5G 2SC5658RM3T5G Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. http://onsemi.com 2 Vdc − 2SC5658M3T5G, 2SC5658RM3T5G TYPICAL ELECTRICAL CHARACTERISTICS 60 1000 160 mA 140 mA 40 120 mA 100 mA 30 80 mA 60 mA 20 TA = - 25°C 100 40 mA 10 0 IB = 20 mA 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 10 0.1 8 1 Figure 1. IC − VCE 900 TA = 25°C 800 COLLECTOR VOLTAGE (mV) VCE , COLLECTOR‐EMITTER VOLTAGE (V) 10 100 IC, COLLECTOR CURRENT (mA) Figure 2. DC Current Gain 2 1.5 1 0.5 700 600 500 400 TA = 25°C VCE = 5 V 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0 0.2 100 1 5 10 20 40 60 80 100 150 200 Figure 4. On Voltage 20 7 6 Cob, CAPACITANCE (pF) 18 16 14 12 10 0.5 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Cib, INPUT CAPACITANCE (pF) VCE = 10 V TA = 25°C TA = 75°C DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) TA = 25°C 50 5 4 3 2 0 1 2 3 1 4 0 10 20 VEB (V) VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 3 30 40 2SC5658M3T5G, 2SC5658RM3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y SIDE VIEW TOP VIEW 3X 1 3X DIM A b b1 C D E e HE L L2 L L2 MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 RECOMMENDED SOLDERING FOOTPRINT* BOTTOM VIEW 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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