ONSEMI NDF11N50ZH

NDF11N50Z
N-Channel Power MOSFET
500 V, 0.52 W
Features
•
•
•
•
•
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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VDSS
RDS(ON) (MAX) @ 4.5 A
500 V
0.52 W
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
NDF
Unit
VDSS
500
V
Continuous Drain Current, RqJC (Note 1)
ID
12
A
Continuous Drain Current
TA = 100°C, RqJC (Note 1)
ID
7.4
A
Pulsed Drain Current,
tP = 10 ms
IDM
44
A
Power Dissipation, RqJC
PD
39
W
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche
Energy, ID = 10 A
EAS
420
mJ
ESD (HBM) (JESD22−A114)
Vesd
4000
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 14)
VISO
4500
V
Peak Diode Recovery (Note 2)
dv/dt
4.5
V/ns
Continuous Source Current (Body
Diode)
IS
12
A
Maximum Temperature for
Soldering Leads
TL
260
°C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Rating
Drain−to−Source Voltage
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. Id ≤ 10.5 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C.
N−Channel
D (2)
G (1)
S (3)
NDF11N50ZG
TO−220FP
CASE 221D
MARKING
DIAGRAM
NDF11N50ZG
or
NDF11N50ZH
AYWW
Gate
Source
NDF11N50ZH
TO−220FP
CASE 221AH
Drain
A
Y
WW
G, H
= Location Code
= Year
= Work Week
= Pb−Free, Halogen−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
February, 2013 − Rev. 4
1
Publication Order Number:
NDF11N50Z/D
NDF11N50Z
THERMAL RESISTANCE
Symbol
NDF11N50Z
Unit
Junction−to−Case (Drain)
Parameter
RqJC
3.2
°C/W
Junction−to−Ambient Steady State (Note 3)
RqJA
50
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
VGS = 0 V, ID = 1 mA
BVDSS
500
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
25°C
VDS = 500 V, VGS = 0 V
Gate−to−Source Forward Leakage
V
0.6
IDSS
V/°C
1
125°C
mA
50
VGS = ±20 V
IGSS
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 4.5 A
RDS(on)
Gate Threshold Voltage
VDS = VGS, ID = 100 mA
VGS(th)
VDS = 15 V, ID = 4.5 A
gFS
±10
mA
0.48
0.52
W
3.9
4.5
V
ON CHARACTERISTICS (Note 4)
Forward Transconductance
3.0
7.7
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
Output Capacitance (Note 5)
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance
(Note 5)
Total Gate Charge (Note 5)
Gate−to−Source Charge (Note 5)
VDD = 250 V, ID = 10.5 A,
VGS = 10 V
Gate−to−Drain (“Miller”) Charge
(Note 5)
Ciss
1097
1375
1645
Coss
132
166
199
Crss
30
40
50
Qg
23
46
69
Qgs
4.5
8.7
13
Qgd
12.5
25
37.5
pF
nC
Plateau Voltage
VGP
6.2
V
Gate Resistance
Rg
1.4
W
td(on)
15
ns
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 250 V, ID = 10.5 A,
VGS = 10 V, RG = 5 Ω
Fall Time
tr
32
td(off)
40
tf
23
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 10.5 A, VGS = 0 V
VSD
Reverse Recovery Time
VGS = 0 V, VDD = 30 V
IS = 10.5 A, di/dt = 100 A/ms
trr
310
ns
Qrr
2.5
mC
Reverse Recovery Charge
3. Insertion mounted
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
5. Guaranteed by design.
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2
1.6
V
NDF11N50Z
TYPICAL CHARACTERISTICS
25
VGS = 10 V
20
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
7.0 V
15
6.5 V
10
6.0 V
5
VDS = 25 V
20
15
10
TJ = 25°C
TJ = 150°C
5
TJ = −55°C
5.5 V
0
5.0 V
0
5
10
15
20
25
0
3
4
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID = 4.5 A
TJ = 25°C
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.00
0.95
2.25
ID = 4.5 A
VGS = 10 V
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100
125
9
10
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0
1
2
3
4
5
6
7
8
9
10
11
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.50
8
VGS = 10 V
TJ = 25°C
0.90
Figure 3. On−Region versus Gate−to−Source
Voltage
2.75
7
Figure 2. Transfer Characteristics
1.00
0.90
6
VGS, GATE−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
0.95
5
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1.15
ID = 1 mA
1.10
1.05
1.00
0.95
0.90
50
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3
25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. BVDSS Variation with Temperature
150
NDF11N50Z
TYPICAL CHARACTERISTICS
TJ = 150°C
TJ = 125°C
1
0.1
0
50
100 150 200 250 300 350 400 450 500
3250
3000
2750
2500
2250
2000
1750
1500
1250
1000
750
500
250
0
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Ciss
Coss
Crss
0.1
1
300
250
VDS
200
VGS
QGS
150
QGD
100
VDS = 250 V
ID = 10.5 A
TJ = 25°C
5
100
Figure 8. Capacitance Variation
QT
0
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
TJ = 25°C
VGS = 0 V
f = 1 MHz
10 15 20 25 30 35 40
Qg, TOTAL GATE CHARGE (nC)
45
50
0
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
C, CAPACITANCE (pF)
IDSS, LEAKAGE (mA)
100
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
20
td(off)
tr
tf
100
td(on)
10
1
1
10
RG, GATE RESISTANCE (W)
IS, SOURCE CURRENT (A)
t, TIME (ns)
VDD = 250 V
ID = 10.5 A
VGS = 10 V
100
10
TJ = 150°C
1
125°C
25°C
−55°C
0.1
0.3
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage versus
Current
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4
1.2
NDF11N50Z
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
100
100 ms 10 ms
1 ms
10 ms
VGS v 30 V
SINGLE PULSE
TC = 25°C
10
dc
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF11N50Z
10
DUTY CYCLE = 0.5
R(t) (C/W)
1
0.1
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
1E−06
1E−05
RqJC = 3.2°C/W
Steady State
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case) for NDF11N50Z
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
1E+02
1E+03
NDF11N50Z
ORDERING INFORMATION
Package
Shipping
NDF11N50ZG
Order Number
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
NDF11N50ZH
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
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6
NDF11N50Z
PACKAGE DIMENSIONS
TO−220FP
CASE 221D−03
ISSUE K
−T−
−B−
F
SEATING
PLANE
C
S
Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
Y
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE D
A
E
B
P
E/2
0.14
Q
D
M
B A
M
A
H1
A1
C
NOTE 3
1 2 3
L
L1
3X
3X
b2
SEATING
PLANE
c
b
0.25
M
B A
M
C
A2
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.70
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.70
7.10
12.70
14.73
--2.10
3.00
3.40
2.80
3.20
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NDF11N50Z/D