NTUD3128N Small Signal MOSFET 20 V, 200 mA, Dual N-Channel, 1.0 mm x 1.0 mm SOT-963 Package Features •Dual N-Channel MOSFET •Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mm Package •1.5 V Gate Voltage Rating •Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics •These are Pb-Free Devices http://onsemi.com V(BR)DSS RDS(ON) MAX ID Max 3.0 W @ 4.5 V 4.0 W @ 2.5 V 20 V 0.2 A 6.0 W @ 1.8 V 10 W @ 1.5 V Applications D1 •General Purpose Interfacing Switch •Optimized for Power Management in Ultra Portable Equipment D2 G1 G2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Value Unit Drain-to-Source Voltage Parameter VDSS 20 V Gate-to-Source Voltage VGS ±8 V Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C tv5s TA = 25°C Steady State TA = 85°C 160 ID S2 PINOUT: SOT-963 115 mA 200 S1 1 6 D1 G1 2 5 G2 3 4 S2 125 TA = 25°C PD tv5s Pulsed Drain Current N-Channel MOSFET S1 mW 200 tp = 10 ms IDM 800 mA TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 2) IS 200 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Operating Junction and Storage Temperature D2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 2. Pulse Test: pulse width v300 ms, duty cycle v2% Top View MARKING DIAGRAM SOT-963 CASE 527AA N M G N MG 1 = Specific Device Code = Date Code = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2007 June, 2007 - Rev. 0 1 Publication Order Number: NTUD3127C/D NTUD3128N THERMAL RESISTANCE RATINGS Parameter Symbol Max Junction-to-Ambient – Steady State (Note 3) Unit 1000 RqJA Junction-to-Ambient – t = 5 s (Note 3) °C/W 600 3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 20 Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, VDS = 5 V IDSS VGS = 0 V, VDS = 16 V Gate-to-Source Leakage Current V TJ = 25°C 50 TJ = 85°C 200 TJ = 25°C 100 IGSS VDS = 0 V, VGS = ±5.0 V VGS(TH) VGS = VDS, ID = 250 mA nA 100 nA 1.0 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Drain-to-Source On Resistance RDS(ON) 0.4 VGS = 4.5 V, ID = 100 mA 1.5 3.0 VGS = 2.5 V, ID = 50 mA 2.0 4.0 VGS = 1.8 V, ID = 20 mA 3.0 6.0 VGS = 1.5 V, ID = 10 mA 4.0 10 VGS = 1.2 V, ID = 1.0 mA 5.5 Forward Transconductance gFS VDS = 5.0 V, ID = 125 mA 0.35 Source-Drain Diode Voltage VSD VGS = 0 V, ID = 10 mA 0.6 W S 1.0 V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 9.0 f = 1.0 MHz, VGS = 0 V VDS = 15 V 3.0 pF 2.2 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time td(ON) tr td(OFF) 15 VGS = 4.5 V, VDD = 10 V, ID = 200 mA, RG = 2.0 W tf 24 90 60 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTUD3128N TYPICAL PERFORMANCE CURVES 0.4 0.4 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) VDS ≥ 5 V TJ = 25°C VGS = 3 V to 5 V 2.5 V 0.3 2.0 V 0.2 1.5 V 0.1 TJ = 125°C TJ = -55°C TJ = 25°C 0.3 0.2 0.1 1.0 V 0 0 1 3 2 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 4 1 3 2 VGS, GATE-T O-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0 RDS(on), DRAIN-T O-SOURCE RESISTANCE (W) RDS(on), DRAIN-T O-SOURCE RESISTANCE (W) 0 15 ID = 200 mA TJ = 25°C 10 5 0 0 2 1 4 3 5 2.5 TJ = 25°C VGS = 2.5 V 2.0 1.5 VGS = 4.5 V 1.0 0.5 0 0.05 0.1 0.15 0.25 0.3 0.35 0.4 Figure 4. On-Resistance vs. Drain Current and Gate Voltage Figure 3. On-Resistance vs. Gate Voltage 1.75 RDS(on), DRAIN-T O-SOURCE RESISTANCE (NORMALIZED) 0.2 ID, DRAIN CURRENT (AMPS) VGS, GATE-T O-SOURCE VOLTAGE (VOLTS) 1.5 5 1000 VGS = 0 V ID = 200 mA VGS = 4.5 V IDSS, LEAKAGE (nA) 1.25 1.0 0.75 0.5 TJ = 150°C 100 TJ = 125°C 10 0.25 0 -50 1 -25 0 25 50 75 100 125 150 0 4 8 12 16 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTUD3128N TYPICAL PERFORMANCE CURVES 1000 VDD = 10 V ID = 200 mA VGS = 4.5 V VGS = 0 V TJ = 25°C 12 Ciss t, TIME (ns) C, CAPACITANCE (pF) 15 9 6 100 td(off) tf tr td(on) 10 Coss 3 Crss 0 0 2 16 18 20 4 6 8 10 12 14 GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 1 Figure 7. Capacitance Variation 10 RG, GATE RESISTANCE (OHMS) 100 Figure 8. Resistive Switching Time Variation vs. Gate Resistance IS, SOURCE CURRENT (AMPS) 0.2 VGS = 0 V TJ = 25°C 0.15 0.1 0.05 0 0 0.2 0.4 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.0 Figure 9. Diode Forward Voltage vs. Current ORDERING INFORMATION Device NTUD3128NT5G Package Shipping† SOT-963 (Pb-Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTUD3128N PACKAGE DIMENSIONS SOT-963 CASE 527AA-01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L -Y- D -X6 5 4 1 2 3 HE E e DIM A b C D E e L HE C b 6X 0.08 X Y MILLIMETERS MIN NOM MAX 0.40 0.45 0.50 0.10 0.15 0.20 0.05 0.10 0.15 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 INCHES NOM MAX 0.018 0.020 0.006 0.008 0.004 0.006 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 MIN 0.016 0.004 0.002 0.037 0.03 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.08 0.20 0.08 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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