NB3N3020
3.3 V, LV-PECL/LV-CMOS
Clock Multiplier
Description
The NB3N3020 is a high precision, low phase noise selectable clock
multiplier. The device takes a 5 – 27 MHz fundamental mode parallel
resonant crystal or a 2 − 210 MHz LVCMOS single ended clock source
and generates a differential LVPECL output and a single ended
LVCMOS/LVTTL output at a selectable clock output frequency which
is a multiple of the input clock frequency. Three tri−level (Low, Mid,
High) LVCMOS/LVTTL single ended select pins set one of 26
possible clock multipliers. An LVCMOS/LVTTL output enable (OE)
tri−states clock outputs when low.
This device is housed in 5 mm x 4.4 mm narrow body TSSOP 16 pin
package.
•
•
MARKING
DIAGRAM
16
16
1
TSSOP−16
DT SUFFIX
CASE 948F
A
L
Y
W
G
Features
•
•
•
•
•
•
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Selectable Clock Multiplier
External Loop Filter is Not Required
LV−PECL Differential Output
LVCMOS/ LVTTL Outputs
RMS Period Jitter of 5 ps
Jitter or Low Phase Noise at 125 MHz [25 MHz Input]:
Offset
Noise Power
100 Hz
-95 dBc/Hz
1 kHz
-107 dBc/Hz
10 kHz
-112 dBc/Hz
100 kHz
-117 dBc/Hz
1 MHz
-117 dBc/Hz
10 MHz
-134 dBc/Hz
Operating Range 3.3 V ±10%
Industrial Temperature Range −40°C to +85°C
1
NB3N
3020
ALYWG
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONFIGURATION
VDD
X1/CLK
X2
Sel2
Sel1
Sel0
OE1
GND
1
16
OE2
VDD
CLK2
CLK2
GND
VDD
CLK1
GND
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 0
1
Publication Order Number:
NB3N3020/D
NB3N3020
VDD
5−27 MHz Crystal
or
2 – 210 MHz Clock
X1 / CLK
X2
Pre
Sca
ler
Clock
Buffer/
Crystal
Oscillator
OE2
GND
Phase
Detector
Loop Filter
LV−PECL
Output
VCO
LV−CMOS/
LV−TTL
Output
%N
CLK2
CLK2
CLK1
Select Control Block
Sel0 Sel1 Sel2
OE1
Figure 1. NB3N3020 Simplified Logic Diagram
Table 1. Pin Description
Pin
Name
I/O
Description
6
Sel0
Tri−Level Input
Frequency select input 0. When left open, defaults to VDD/ 2. See output select Table 2 for
details.
5
Sel1
Tri−Level Input
Frequency select input 1. When left open, defaults to VDD/ 2. See output select Table 2 for
details.
4
Sel2
Tri−Level Input
Frequency select input 2. When left open, defaults to VDD/ 2. See output select Table 2 for
details.
1, 11, 15
VDD
Power Supply
Positive supply voltage pins are connected to +3.3 V supply voltage.
2
X1/CLK
Input
Crystal or Clock input. Connect to 5 − 27 MHz crystal source or 2 – 210 MHz single−ended
clock. See Table 2.
3
X2
Input
Crystal input. Connect to a 5 – 27 MHz crystal or leave unconnected for clock input. See
Table 2.
7, 16
OE1,
OE2
Input
Output enable input that tri−states clock outputs when low. Internal pull−up resistor to VDD.
OE1 is designated to control LV CMOS output synchronously and OE2 is designated to
control LV PECL output synchronously. See operation details in device operation.
8, 9, 12
GND
Power Supply
13
CLK2
LVPECL Output
Non−inverted clock output. Clock frequency equals input frequency times multiplier.
14
CLK2
LVPECL Output
Inverted clock output. Clock frequency equals input frequency times multiplier.
10
CLK1
LVTTL/
LVCMOS
Output
Ground 0 V. These pins provide GND return path for the devices.
Clock Output. Clock frequency equals input frequency times multiplier.
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2
NB3N3020
Table 2. Output Frequency Clock Multiplier Select Table
Sel2
Sel1
Sel0
CLK1, CLK2, CLK2
Clock Input Range [MHz]
Crystal Input Range [MHz]
L
L
L
Low (Power Down)
−
−
L
L
M
Input X 1
25 − 210
25 − 27
L
L
H
Input X 1.33
15 −157.5
15 − 27
L
M
L
Input X 1.5
10 − 140
10 − 27
L
M
M
Input X 1.6
25 – 131.25
25 − 27
L
M
H
Input X 1.875
40 − 112
−
L
H
L
Input X 2
25 − 105
25 − 27
L
H
M
Input X 2.33
15 − 90
15 − 27
L
H
H
Input X 2.4
25 – 87.5
25 − 27
M
L
L
Input X 2.5
10 − 84
10 − 27
M
L
M
Input X 2.66
15 − 78.75
15 − 27
M
L
H
Input X 3
15 − 70
15 − 27
M
M
L
Input X 3.125
40 – 67.20
−
M
M
M
Input X 3.2
25 – 65.63
25 − 27
M
M
H
Input X 3.33
15 − 63
15 − 27
M
H
L
Input X 3.75
20 − 56
20 − 27
M
H
M
Input X 4
2 – 25
5 − 25
M
H
H
Input X 5
6 − 42
6 − 27
H
L
L
Input X 6
5 − 35
5 − 27
H
L
M
Input X 6.25
20 – 33.6
20 − 27
H
L
H
Input X 6.33
15 – 33.16
15 – 27
H
M
L
Input X 8
5 – 26.25
5 – 26.25
H
M
M
Input X 8.33
15 – 25.2
15 – 25.2
H
M
H
Input X 10
5 − 21
5 − 21
H
H
L
Input X 12
5 – 17.5
5 – 17.5
H
H
M
Input X 12.5
10 – 16.8
10 – 16.8
H
H
H
Input X 16
5 − 13.125
5 – 13.125
L – Low, M – Mid, H − High
Recommended Crystal Parameters
Crystal
Frequency
Load Capacitance
Shunt Capacitance, C0
Fundamental AT−Cut
5 − 27 MHz
16 − 20 pF
7 pF Max
Equivalent Series Resistance
Initial Accuracy at 25°C
Temperature Stability
Aging
C0/C1 Ration
35 W Max
±20 ppm
±30 ppm
±20 ppm
250 Max
input as determined by the tri−level select inputs [Sel0, Sel1,
Sel2].
Clock Multiplication
NB3N3020 is a clock multiplier with the clock multiplier
selected by the tri level select inputs [Sel0, Sel1, Sel2].
NB3N3020 has a LVTTL/LVCMOS output [CLK1] and a
LVPECL clock output [CLK2, CLK2].
Output Enable
The device has an output enable [OE] which is used to
tri−state the outputs. OE1 controls the CLK1 clock output
where as OE2 controls the CLK2, CLK2 clock outputs.
When OE1or OE2 are disabled, the respective clock
output(s) are tri−stated. In this mode of operation, PLL is
still running, with the respective clock outputs tri−stated.
When the OE1 or OE2 are enabled, the clock outputs
Device Operation
The NB3N3020 is a Clock multiplier. The device can take
crystal or clock input and generates LVPECL and
LVCMOS/ LVTTL clock outputs which are multiples of the
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3
NB3N3020
become active synchronous to the internal PLL output clock
and do not create any glitches or runt pulses during the
transition. In power down mode, the outputs are tri−stated
regardless of the state of the OE1, OE2.
for clock and crystal input for specific multipliers are
determined by Table 3.
Power Up
When the NB3N3020 is powered up, it takes 10 msec for
the PLL’s to stabilize and lock to the desired frequency of
operation as selected by Sel0, Sel1, Sel2. During this time
period, there may be glitches in the clock outputs.
Changing Clock Multiplier
The clock output frequency can be dynamically changed
using Sel0, Sel1, Sel2 pins. When the clock frequency is
changed, the clock outputs move from one frequency to
another and the PLL locks to the new frequency within a
settling time of 3 msec. There is no glitch during this
transition when the clock outputs are active {not tri−stated
by OE1, OE2}.
Power Down:
The device can be powered down when the Sel0, Sel1,
Sel2 pins are all connected to GND. In this mode of
operation, PLL is turned off and the device consumes less
than 5 mA of current. There may be a glitch in clock outputs
when the device is powering down. In power down mode,
the outputs are tri−stated regardless of the state of the OE1,
OE2.
In the cases where the application requires glitch−less
transitions, in order to avoid glitches it is recommended to
use synchronous OE signaling to mask glitches to the clock
outputs.
Crystal/ Clock Input
The device takes in a 5 – 27 MHz crystal input or 2 –
210 MHz clock input. Once powered up, the input frequency
is fixed and should not be changed dynamically. The input
cannot accept a spread spectrum clock and needs a fixed
frequency clock for device operation. The input frequencies
Table 3. Attributes
ESD Protection
Characteristics
Value
Human Body Model
2 kV
Moisture Sensitivity, Indefinite Time Out of Dry pack (Note 1)
Flammability Rating
Oxygen Index
Level 1
UL−94 code V−0 A 1/8″
28 to 34
Transistor Count
8287 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 4. Maximum Ratings (Note 2)
Symbol
VDD
Parameter
Condition 1
Positive Power Supply
GND = 0 V
VI
Input Voltage (VIN)
GND = 0 V
Iout
LV PECL Output Current
Continuous
Surge
TA
Operating Temperature Range
Tstg
Storage Temperature Range
qJA
Thermal Resistance (Junction−to−Ambient)
qJC
Thermal Resistance (Junction−to−Case)
Tsol
Wave Solder
Condition 2
GND ≤ VI ≤ VDD
Rating
Units
4.6
V
−0.5 V to VDD + 0.5 V
V
25
50
mA
−40 to +85
°C
−65 to +150
°C
0 LFPM
500 LFPM
TSSOP – 16
TSSOP – 16
138
108
°C/W
(Note 3)
TSSOP − 16
33 to 36
°C/W
265
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
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NB3N3020
Table 5. DC CHARACTERISTICS (VDD = 3.3 V ±10%, GND = 0 V, TA = −40°C to +85°C)
Symbol
Characteristic
Min
Typ
Max
Unit
2.97
3.3
3.63
V
75
mA
VDD
Power Supply Voltage
IDD
Power Supply Current (Note 4)
60
IDDOE
Power Supply Current when OE1, OE2 is Set Low
50
IDDOFF
Power Supply Current when PLL is powered off by Sel0, Sel1, Sel2
mA
5
mA
VIH
Input HIGH Voltage (X1/CLK, OE1, OE2)
2000
VDD + 300
mV
VIL
Input LOW Voltage (X1/CLK, OE1, OE2)
GND − 300
800
mV
VIH
Input HIGH Voltage (Sel0, Sel1, Sel2)
0.72 VDD
VDD + 300
mV
VIL
Input LOW Voltage (Sel0, Sel1, Sel2)
GND − 300
800
mV
VIM
Input Mid Voltage (Sel0, Sel1, Sel2) (When left open, defaults to VDD/2
VOH
Output HIGH Voltage for CLK2, CLK2 (See Figure 3)
VDD – 1.145
VDD – 0.895
V
VOL
Output LOW Voltage for CLK2, CLK2 (See Figure 3)
VDD – 2.090
VDD – 1.600
V
VOH
Output HIGH Voltage for CLK1 [IOH = −12 mA]
VOL
Output LOW Voltage for CLK1 [IOL = 12 mA]
VDD/2
mV
2.4
V
0.4
V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Measurement taken at 125 MHz with LV−PECL & LV−CMOS/ LV−TTL outputs not terminated.
Table 6. AC Characteristics (VDD = 3.3 V ±10%, GND = 0 V, TA = −40°C to +85°C) (Note 5)
Symbol
Characteristic
Min
Typ
Max
Unit
fCLKIN
Crystal Input Frequency
5.0
27
MHz
fCLKIN
Clock Input Frequency
2.0
210
MHz
210
MHz
fCLKOUT
Output Clock Frequency
FNOISE
Phase−Noise Performance (fCLKout = 125 MHz, 25 MHz input)
@ 100 Hz offset from carrier
−95
dBc/Hz
@ 1 kHz offset from carrier
−107
dBc/Hz
@ 10 kHz offset from carrier
−112
dBc/Hz
@ 100 kHz offset from carrier
−117
dBc/Hz
@ 1 MHz offset from carrier
−117
dBc/Hz
@ 10 MHz offset from carrier
−134
dBc/Hz
Tjitter p−p
Cycle to Cycle Jitter peak to peak (Note 6)
fCLKout= 125 MHz, 25 MHz input
20
36
ps
Tjitter rms
Cycle to Cycle Jitter rms (Note 6)
fCLKout= 125 MHz, 25 MHz input
5.0
9.0
ps
Tjitter p−p
Period Jitter peak to peak (Note 7)
fCLKout= 125 MHz, 25 MHz input
15
20
ps
Tjitter rms
Period Jitter rms (Note 7)
fCLKout= 125 MHz, 25 MHz input
3.0
5.0
ps
Start up time from power up
10
ms
Output Enable/Disable Time
10
us
PLL settling time
3
ms
OE
5. Measurement taken with outputs terminated with 50 ohms to VDD − 2 V. See Figure 2.
6. Sampled with 1000 cycles
7. Sampled with 10000 cycles
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5
NB3N3020
Table 6. AC Characteristics (VDD = 3.3 V ±10%, GND = 0 V, TA = −40°C to +85°C) (Note 5)
Symbol
Characteristic
Min
Typ
Max
Unit
45
50
55
%
tDUTY_CYCLE
Output Clock Duty Cycle (Measured at cross point for LV PECL clock
output and VDD/2 for LVCMOS/ LVTTL clock output)
tR
Output Rise Time (Note 5) (Measured from 20% to 80%. Figure 2) LV
PECL Output
340
700
ps
tF
Output Fall Time (Note 5) (Measured from 20% to 80%. Figure 2) LV
PECL Output
340
700
ps
tR
Output Rise Time (Measured from 0.8 to 2 V, no load) LVCMOS/ LV TTL
Output
1500
ps
tF
Output Fall Time (Measured from 2.0 V to 0.8 V, no load) LVCMOS/ LV
TTL Output
1500
ps
1500
ps
tR/ tF
Input Rise time/ Fall time for LV CMOS/ LV TTL clock input [X1/CLK]
0
5. Measurement taken with outputs terminated with 50 ohms to VDD − 2 V. See Figure 2.
6. Sampled with 1000 cycles
7. Sampled with 10000 cycles
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
LV − PECL
Driver
CLK2
Z = 50 W
CLK2b
Z = 50 W
Receiver
Device
RL = 50 W
RL = 50 W
VDD − 2 V
Figure 2. Typical Termination for Output Driver for Device Evaluation
VDD − 0.9 V
80%
80%
20%
20%
VDD − 1.7 V
tR
340 ps
340 ps
tF
Figure 3. LV−PECL Output Parameter Characteristics
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NB3N3020
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F−01
ISSUE B
16X K REF
0.10 (0.004)
0.15 (0.006) T U
T U
M
S
V
S
K
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
ÇÇÇ
ÉÉÉ
S
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
N
8
1
0.25 (0.010)
M
0.15 (0.006) T U
S
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
SOLDERING FOOTPRINT*
7.06
1
0.65
PITCH
16X
0.36
16X
1.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
NB3N3020
ORDERING INFORMATION
Package
Shipping†
NB3N3020DTG
TSSOP−16
(Pb−Free)
96 Units / Rail
NB3N3020DTR2G
TSSOP−16
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NB3N3020/D