SPICE MODEL: DMMT5551 Lead-free Green DMMT5551/DMMT5551S MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • • Epitaxial Planar Die Construction A Complementary PNP Type Available (DMMT5401) Ideal for Low Power Amplification and Switching SOT-26 Intrinsically Matched NPN Pair (Note 1) B C Dim Min Max Typ Lead Free/RoHS Compliant (Note 4) A 0.35 0.50 0.38 "Green" Device (Note 5 and 6) B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 F 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 α 0° 8° 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) H K M Mechanical Data • • • • • • • • • J F D Case: SOT-26 L Case Material: Molded Plastic, "Green" Molding Compound, Note 7. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C E1 Terminal Connections: See Diagram E2 C2 C1 E1 C2 Terminals: Solderable per MIL-STD-202, Method 208 All Dimensions in mm Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). Marking (See Page 2): K4R & K4T Ordering & Date Code Information: See Page 2 C1 B1 B2 DMMT5551 (K4R Marking Code) B1 E2 B2 DMMT5551S (K4T Marking Code) Weight: 0.006 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 2) IC 200 mA Power Dissipation (Note 2, 3) Pd 300 mW RθJA 417 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage and Temperature Range Notes: 1. Built with adjacent die from a single wafer. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Maximum combined dissipation. 4. No purposefully added lead. 5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.. 6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30436 Rev. 7 - 2 1 of 4 www.diodes.com DMMT5551/DMMT5551S Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 180 V IC = 100µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 160 V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 V IE = 10µA, IC = 0 Collector Cutoff Current ICBO 50 nA µA VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C Emitter Cutoff Current IEBO 50 nA VEB = 4.0V, IC = 0 hFE 80 80 30 250 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V Collector-Emitter Saturation Voltage VCE(SAT) 0.15 0.20 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) 1.0 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Output Capacitance Cobo 6.0 pF VCB = 10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hFE 50 250 Current Gain-Bandwidth Product fT 100 300 MHz VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz Noise Figure NF 8.0 dB OFF CHARACTERISTICS (Note 7) ON CHARACTERISTICS (Note 7) DC Current Gain (Note 8) SMALL SIGNAL CHARACTERISTICS Ordering Information Notes: VCE = 5.0V, IC = 200µA, RS = 1.0kΩ, f = 1.0kHz (Note 6 & 9) Device Packaging Shipping DMMT5551-7-F SOT-26 3000/Tape & Reel DMMT5551S-7-F SOT-26 3000/Tape & Reel 6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 7. Short duration pulse test used to minimize self-heating effect. 8. The DC Current Gain, hFE, (matched at IC = 10mA and VCE = 5V) Collector Emitter Saturation Voltage, VCE(SAT), and Base Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%. 9. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K4R C1 B1 C2 E1 C1 K4R = DMMT5551 Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September B2 C2 YM E2 YM E1 K4T E2 B1 K4T = DMMT5551S Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September B2 Date Code Key Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code Q R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30436 Rev. 7 - 2 2 of 4 www.diodes.com DMMT5551/DMMT5551S 400 0.15 Note 2 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0.13 0.12 25 50 75 100 125 150 175 TA = 150°C 0.11 0.10 0.09 0.08 TA = 25°C 0.07 0.06 0.05 0 0 IC = 10 IB 0.14 350 TA = -50°C 0.04 200 1 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN TA = 150°C 100 TA = 25°C TA = -50°C 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1000 VCE = 5V 10 VCE = 5V 0.9 TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 0.4 TA = 150°C 0.3 0.2 1 10 1 100 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current DS30436 Rev. 7 - 2 3 of 4 www.diodes.com DMMT5551/DMMT5551S IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30436 Rev. 7 - 2 4 of 4 www.diodes.com DMMT5551/DMMT5551S