MMBT4403LT1 Switching Transistor PNP Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −600 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C RJA 556 °C/W PD 300 mW 2.4 mW/°C Collector Current − Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 3 1 SOT−23 (TO−236) CASE 318−08 STYLE 6 2 MARKING DIAGRAM RJA 417 °C/W TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 2T D 2T = Specific Device Code D = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2004 September, 2004 − Rev. 3 1 Publication Order Number: MMBT4403LT1/D MMBT4403LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −40 − −40 − −5.0 − − −0.1 − −0.1 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = −35 Vdc, VEB = −0.4 Vdc) IBEV Collector Cutoff Current (VCE = −35 Vdc, VEB = −0.4 Vdc) ICEX Vdc Vdc Vdc Adc Adc ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −150 mAdc, VCE = −2.0 Vdc) (Note 3) (IC = −500 mAdc, VCE = −2.0 Vdc) (Note 3) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) 30 60 100 100 20 − − − 300 − − − −0.4 −0.75 −0.75 − −0.95 −1.3 200 − − 8.5 − 30 1.5 15 0.1 8.0 60 500 1.0 100 − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS fT Current −Gain — Bandwidth Product (IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Ccb Emitter−Base Capacitance (VBE = −0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb Input Impedance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hre Small −Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hoe MHz pF pF k X 10− 4 − mhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = −30 30 Vdc, VEB = −2.0 2.0 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) td − 15 tr − 20 (VCC = −30 30 Vdc, IC = −150 150 mAdc, IB1 = IB2 = −15 mAdc) ts − 225 tf − 30 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 ns ns MMBT4403LT1 ORDERING INFORMATION Package Shipping† MMBT4403LT1 SOT−23 (TO−236) 3000 Tape & Reel MMBT4403LT1G SOT−23 (TO−236) (Pb−Free) 3000 Tape & Reel MMBT4403LT3 SOT−23 (TO−236) 10,000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SWITCHING TIME EQUIVALENT TEST CIRCUIT −30 V −30 V 200 < 2 ns +2 V +14 V 0 0 1.0 k −16 V 10 to 100 s, DUTY CYCLE = 2% 200 < 20 ns CS* < 10 pF 1.0 k −16 V 1.0 to 100 s, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time http://onsemi.com 3 CS* < 10 pF MMBT4403LT1 TRANSIENT CHARACTERISTICS 25°C 100°C 30 Ceb VCC = 30 V IC/IB = 10 3.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 5.0 10 7.0 Ccb 5.0 2.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.2 0.3 20 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 0.1 30 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 3. Capacitances 100 IC/IB = 10 70 70 VCC = 30 V IC/IB = 10 50 50 20 t r , RISE TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 30 20 10 10 7.0 7.0 10 20 30 50 70 200 100 300 5.0 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Rise Time 200 IC/IB = 10 t s′, STORAGE TIME (ns) t, TIME (ns) 500 Figure 4. Charge Data 100 5.0 300 100 IC/IB = 20 70 50 IB1 = IB2 ts′ = ts − 1/8 tf 30 20 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time http://onsemi.com 4 200 300 500 300 500 MMBT4403LT1 SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 10 8 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f = 1 kHz IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k IC = 100 A, RS = 1.6 k 6 4 2 6 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC = 50 A 100 A 500 A 1.0 mA 0 100 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 8. Frequency Effects Figure 9. Source Resistance Effects 50k h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the MMBT4403LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 100k 700 50k hie , INPUT IMPEDANCE (OHMS) 1000 hfe , CURRENT GAIN 500 300 200 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 100 70 50 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10k 5k 2k 1k 500 100 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain Figure 11. Input Impedance 20 5.0 7.0 10 500 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 0.1 20k 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hoe, OUTPUT ADMITTANCE ( mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 −4 ) 30 0.1 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 100 50 20 5.0 2.0 1.0 0.1 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance http://onsemi.com 5 5.0 7.0 10 MMBT4403LT1 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 25°C 1.0 −55 °C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 70 50 100 200 300 500 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 0.5 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(sat) @ VCE = 10 V 0 COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 1.0 0.4 0.2 VC for VCE(sat) 0.5 1.0 1.5 VS for VBE 2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.5 0.1 0.2 500 Figure 16. “On” Voltages 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 17. Temperature Coefficients http://onsemi.com 6 500 MMBT4403LT1 PACKAGE DIMENSIONS CASE 318−08 SOT−23 (TO−236) ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches SOT−23 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMBT4403LT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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