MMBT4403WT1 Switching Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model; 4 kV, http://onsemi.com Machine Model; 400 V COLLECTOR 3 • Pb−Free Package is Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −40 Vdc Collector−Base Voltage VCBO −40 Vdc Emitter−Base Voltage VEBO −5.0 Vdc IC −600 mAdc Symbol Max Unit PD 150 mW RqJA 833 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1 2 SC−70 CASE 419 STYLE 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2T D 2T = Specific Device Code D = Date Code ORDERING INFORMATION Device MMBT4403WT1 MMBT4403WT1G Package Shipping† SC−70 3000/Tape & Reel SC−70 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 March, 2005 − Rev. 2 1 Publication Order Number: MMBT4403WT1/D MMBT4403WT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) V(BR)CEO −40 − Vdc Collector−Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO −40 − Vdc Emitter−Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc Base Cutoff Current (VCE = −35 Vdc, VEB = −0.4 Vdc) IBEV − −0.1 mAdc Collector Cutoff Current (VCE = −35 Vdc, VEB = −0.4 Vdc) ICEX − −0.1 mAdc 30 60 100 100 20 − − − 300 − − − −0.4 −0.75 −0.75 − −0.95 −1.3 fT 200 − MHz Collector−Base Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Ccb − 8.5 pF Emitter−Base Capacitance (VBE = −0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hie 1.5 15 kW Voltage Feedback Ratio (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10− 4 Small−Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe 60 500 − Output Admittance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hoe 1.0 100 mmhos (VCC = −30 30 Vdc, VEB = −2.0 2.0 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) td − 15 tr − 20 (VCC = −30 30 Vdc, IC = −150 150 mAdc, IB1 = IB2 = −15 mAdc) ts − 225 tf − 30 OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −150 mAdc, VCE = −2.0 Vdc) (Note 1) (IC = −500 mAdc, VCE = −2.0 Vdc) (Note 1) hFE Collector−Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) Base−Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns ns 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT −30 V −30 V 200 W < 2 ns +2 V +14 V 0 0 1.0 kW −16 V 10 to 100 ms, DUTY CYCLE = 2% 200 W < 20 ns CS* < 10 pF 1.0 kW −16 V 1.0 to 100 ms, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time http://onsemi.com 2 CS* < 10 pF MMBT4403WT1 TRANSIENT CHARACTERISTICS 25°C 100°C 30 Ceb VCC = 30 V IC/IB = 10 3.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 5.0 10 7.0 Ccb 5.0 2.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 0.1 30 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 3. Capacitances 100 IC/IB = 10 70 70 VCC = 30 V IC/IB = 10 50 50 20 t r , RISE TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 30 20 10 10 7.0 7.0 10 20 30 50 70 100 200 300 5.0 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Rise Time 200 IC/IB = 10 t s′, STORAGE TIME (ns) t, TIME (ns) 500 Figure 4. Charge Data 100 5.0 300 100 IC/IB = 20 70 50 IB1 = IB2 ts′ = ts − 1/8 tf 30 20 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time http://onsemi.com 3 300 500 300 500 MMBT4403WT1 SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 10 8 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f = 1 kHz IC = 1.0 mA, RS = 430 W IC = 500 mA, RS = 560 W IC = 50 mA, RS = 2.7 kW IC = 100 mA, RS = 1.6 kW 6 4 2 6 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC = 50 mA 100 mA 500 mA 1.0 mA 0 100 50 100 200 f, FREQUENCY (kHz) Figure 8. Frequency Effects 500 1k 2k 5k 10k 20k RS, SOURCE RESISTANCE (OHMS) 50k Figure 9. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the MMBT4403LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 100k 700 50k hie , INPUT IMPEDANCE (OHMS) 1000 hfe , CURRENT GAIN 500 300 200 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 100 70 50 30 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 20k 10k 5k 2k 1k 500 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 100 5.0 7.0 10 0.1 0.2 IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain 2.0 3.0 5.0 7.0 10 Figure 11. Input Impedance 500 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hoe, OUTPUT ADMITTANCE (m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10−4 ) 0.5 0.7 1.0 IC, COLLECTOR CURRENT (mAdc) 20 0.1 0.3 100 50 20 5.0 2.0 1.0 0.1 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance http://onsemi.com 4 5.0 7.0 10 MMBT4403WT1 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 25°C 1.0 −55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 0.5 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(sat) @ VCE = 10 V 0 COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 1.0 0.4 0.2 qVC for VCE(sat) 0.5 1.0 1.5 qVS for VBE 2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.5 0.1 0.2 500 Figure 16. “On” Voltages 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 17. Temperature Coefficients http://onsemi.com 5 500 MMBT4403WT1 PACKAGE DIMENSIONS SC−70/SOT−323 CASE 419−04 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 DIM A B C D G H J K L N S B S 1 2 D G C 0.05 (0.002) J N MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR K H INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches SC−70/SOT−323 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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