NSB1011XV6T5 Preferred Device Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSB1011XV6T5, two BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium. • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count This device is manufactured with a Pb−Free external lead finish only. http://onsemi.com (3) R1 Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc (4) Symbol PD RqJA 54 12 3 MARKING DIAGRAM Max Unit 357 (Note 1) 2.9 (Note 1) mW mW/°C 350 (Note 1) °C/W UT = Specific Device Code (see table on following page) D = Date Code ORDERING INFORMATION Device Symbol Total Device Dissipation TA = 25°C Derate above 25°C PD Max Unit 500 (Note 1) 4.0 (Note 1) mW mW/°C Thermal Resistance − Junction-to-Ambient RqJA 250 (Note 1) °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad. Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 0 (6) UT D Total Device Dissipation TA = 25°C Derate above 25°C Characteristic (Both Junctions Heated) (5) 6 THERMAL CHARACTERISTICS Thermal Resistance − Junction-to-Ambient R1 SOT−563 CASE 463A PLASTIC Symbol Characteristic (One Junction Heated) R2 Q2 R2 (TA = 25°C unless otherwise noted, common for Q1 and Q2) Collector Current (1) Q1 MAXIMUM RATINGS Rating (2) 1 Package NSB1011XV6T5 SOT−563 (Pb−Free) Shipping † 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: NSB1011XV6/D NSB1011XV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.5 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 2) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc Q1 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2) DC Current Gain (VCE = 10 V, IC = 5.0 mA) hFE 35 60 − − VCE(sat) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 7.0 10 13 kW Resistor Ratio R1/R2 0.8 1.0 1.2 − Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Q2 OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 2) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 80 140 − − VCE(sat) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) ON CHARACTERISTICS (Note 2) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VOH 4.9 − − Vdc Input Resistor R1 1.54 2.2 2.86 kW Resistor Ratio R1/R2 0.038 0.047 0.056 − 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 −50 RqJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 2 150 NSB1011XV6T5 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — Q1 TA=−25°C 25°C 0.1 75°C 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 0.01 0.001 VCE = 10 V 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C 1 0.1 0.01 0.001 50 TA=−25°C 10 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob, CAPACITANCE (pF) 4 3 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://onsemi.com 3 50 10 NSB1011XV6T5 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — Q2 75°C 0.1 −25°C 25°C 0.01 0.001 30 10 20 40 IC, COLLECTOR CURRENT (mA) 0 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC f = 1 MHz IE = 0 V TA = 25°C 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 75°C 1 TA = −25°C 0.1 0.01 0.001 50 25°C VO = 5 V 0 Figure 9. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 75°C 1 25°C TA = −25°C VO = 0.2 V 0.1 0 9 10 Figure 10. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 3.5 100 Figure 8. DC Current Gain 4.5 4 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 4 50 NSB1011XV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE D A −X− 6 5 1 G 2 C 4 3 B −Y− D 65 PL 0.08 (0.003) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. K DIM A B C D G J K S S J M X Y STYLE 1: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 2: PIN 1. EMITTER 1 2. EMITTER2 3. BASE 2 4. COLLECTOR 2 5. BASE 1 6. COLLECTOR 1 STYLE 3: PIN 1. CATHODE 1 2. CATHODE 1 3. ANODE/ANODE 2 4. CATHODE 2 5. CATHODE 2 6. ANODE/ANODE 1 MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 STYLE 4: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 NSB1011XV6T5 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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