ONSEMI NSTB1005DXV5T1

NSTB1005DXV5T1,
NSTB1005DXV5T5
Preferred Devices
Dual Common
Base−Collector Bias
Resistor Transistors
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NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
3
1
R1
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. The NSTB1005DXV5T1
contains two complementary BRT devices are housed in the SOT−553
package which is ideal for low power surface mount applications
where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch Tape and Reel
• Lead Free
R2
Q2
R2
Q1
R1
4
5
5
1
SOT−553
CASE 463B
MARKING DIAGRAM
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
5
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Rating
2
UC D
Collector Current
IC
100
mAdc
Symbol
Max
Unit
357 (Note 1)
2.9 (Note 1)
mW
mW/°C
350 (Note 1)
°C/W
1
UC = Specific Device Code
D = Date Code
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Junction and Storage Temperature
PD
RJA
Symbol
Max
Unit
500 (Note 1)
4.0 (Note 1)
mW
mW/°C
RJA
250 (Note 1)
°C/W
TJ, Tstg
−55 to +150
PD
°C
ORDERING INFORMATION
Device
Package
Shipping†
NSTB1005DXV5T1 SOT−553
4 mm pitch
4000/Tape & Reel
NSTB1005DXV5T5 SOT−553
2 mm pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1. FR−4 @ Minimum Pad
 Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 0
1
Publication Order Number:
NSTB1005DXV5/D
NSTB1005DXV5T1, NSTB1005DXV5T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter−Base Cutoff Current
IEBO
−
−
0.1
mAdc
Collector−Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector−Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
80
140
−
VCE(sat)
−
−
0.25
Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
VOL
−
−
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
VOH
4.9
−
−
Vdc
R1
32.9
47
61.1
k
R1/R2
0.8
1.0
1.2
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current
IEBO
−
−
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
80
140
−
VCE(SAT)
−
−
0.25
Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
VOL
−
−
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
VOH
4.9
−
−
Vdc
k
Characteristic
Q1 TRANSISTOR: PNP − OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
Input Resistor
Resistor Ratio
Q2 TRANSISTOR: NPN − OFF CHARACTERISTICS
(VEB = 6.0, IC = 5.0 mA)
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
Input Resistor
R1
33
47
61
Resistor Ratio
R1/R2
0.8
1.0
1.2
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
0
−50
RJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
150
NSTB1005DXV5T1, NSTB1005DXV5T5
1000
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − PNP TRANSISTOR
TA=−25°C
0.1
25°C
75°C
0.01
0
20
25°C
100
10
−25°C
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
50
1
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
0.001
50
100
VO = 5 V
0
1
2
6
7
3
4
5
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0
10
8
9
Figure 5. Output Current versus Input Voltage
10
0.1
100
25°C
75°C
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
IC, COLLECTOR CURRENT (mA)
40
4
0
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
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3
10
NSTB1005DXV5T1, NSTB1005DXV5T5
10
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR
1
25°C
TA=−25°C
75°C
0.1
0.01
0
TA=75°C
25°C
−25°C
100
10
50
20
40
IC, COLLECTOR CURRENT (mA)
10
IC, COLLECTOR CURRENT (mA)
1
Figure 7. VCE(sat) versus IC
1
100
IC, COLLECTOR CURRENT (mA)
0.4
0.2
0
0
25°C
75°C
0.6
TA=−25°C
10
1
0.1
0.01
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 10. Output Current versus Input Voltage
Figure 9. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 8. DC Current Gain
f = 1 MHz
IE = 0 mA
TA = 25°C
0.8
100
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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4
NSTB1005DXV5T1, NSTB1005DXV5T5
PACKAGE DIMENSIONS
SOT−553
XV5 SUFFIX
5−LEAD PACKAGE
CASE 463B−01
ISSUE A
A
−X−
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
C
K
4
1
2
B
−Y−
3
D
G
J
5 PL
0.08 (0.003)
DIM
A
B
C
D
G
J
K
S
S
M
X Y
MILLIMETERS
MIN
MAX
1.50
1.70
1.10
1.30
0.50
0.60
0.17
0.27
0.50 BSC
0.08
0.18
0.10
0.30
1.50
1.70
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
INCHES
MIN
MAX
0.059
0.067
0.043
0.051
0.020
0.024
0.007
0.011
0.020 BSC
0.003
0.007
0.004
0.012
0.059
0.067
NSTB1005DXV5T1, NSTB1005DXV5T5
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5773−3850
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6
For additional information, please contact your
local Sales Representative.
NSTB1005DXV5/D