ONSEMI 2N5401RLRM

2N5401
Preferred Device
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
2N5400 2N5401
Unit
Collector − Emitter Voltage
VCEO
120
150
Vdc
Collector − Base Voltage
VCBO
130
160
Vdc
Emitter − Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
600
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
1.5
12
Watts
mW/°C
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
12
3
MARKING DIAGRAM
2N54xx
THERMAL CHARACTERISTICS
Characteristic
YWW
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RJC
83.3
°C/W
Y
WW
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
May, 2004 − Rev. 1
1
Publication Order Number:
2N5401/D
2N5401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
150
−
160
−
5.0
−
−
−
50
50
−
50
50
60
50
−
240
−
−
−
0.2
0.5
−
−
1.0
1.0
100
300
−
6.0
40
200
−
8.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
2N5400
2N5401
Collector−Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
Vdc
V(BR)CBO
2N5400
2N5401
Emitter−Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Vdc
Vdc
ICBO
2N5401
2N5401
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
fT
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MHz
Cobo
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
Noise Figure
(IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz)
NF
pF
−
dB
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Package
Shipping†
2N5401
TO−92
5000 Unit / Bulk
2N5401RL1
TO−92
2000 Tape & Reel
2N5401RLRA
TO−92
2000 Tape & Reel
TO−92
(Pb−Free)
2000 Tape & Reel
2N5401RLRM
TO−92
2000 Tape & Ammo Box
2N5401ZL1
TO−92
2000 Tape & Ammo Box
Device
2N5401RLRAG
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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2
2N5401
200
150
h FE, CURRENT GAIN
TJ = 125°C
100
25°C
70
50
−55 °C
VCE = − 1.0 V
VCE = − 5.0 V
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (mA)
10
20
30
50
100
10
20
50
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
0.5
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
Figure 2. Collector Saturation Region
103
IC, COLLECTOR CURRENT (A)
µ
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
102
VCE = 30 V
IC = ICES
101
TJ = 125°C
100
75°C
10−1
10−2
REVERSE
25°C
10−3
0.3
0.2
FORWARD
0.1
0
0.1
0.2 0.3 0.4
0.5
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
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3
0.6
0.7
2N5401
1.0
0.9
θV, TEMPERATURE COEFFICIENT (mV/ °C)
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
0.7
VBE(sat) @ IC/IB = 10
0.6
0.5
0.4
0.3
0.2
VCE(sat) @ IC/IB = 10
0.1
0
0.1
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
50
2.5
1.5
1.0
0.5
VC for VCE(sat)
0
−0.5
−1.0
−1.5
VB for VBE(sat)
−2.0
−2.5
0.1
100
TJ = − 55°C to 135°C
2.0
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
100
70
50
C, CAPACITANCE (pF)
VCC
−30 V
10.2 V
100
10 s
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.25 F
3.0 k
RC
Vout
RB
5.1 k
Vin
100
TJ = 25°C
30
Cibo
20
10
7.0
5.0
Cobo
3.0
1N914
2.0
1.0
0.2
Values Shown are for IC @ 10 mA
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Switching Time Test Circuit
1000
700
500
10
20
Figure 7. Capacitances
2000
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
300
1000
700
500
tr @ VCC = 30 V
200
t, TIME (ns)
t, TIME (ns)
100
Figure 5. Temperature Coefficients
VBB
+8.8 V
Vin
50
100
70
50
10
0.2 0.3 0.5
td @ VBE(off) = 1.0 V
VCC = 120 V
1.0
2.0 3.0 5.0
10
20 30
tf @ VCC = 120 V
tf @ VCC = 30 V
200
ts @ VCC = 120 V
100
70
50
30
20
300
IC/IB = 10
TJ = 25°C
30
50
100
20
0.2 0.3 0.5
200
1.0
2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
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4
50
100
200
2N5401
PACKAGE DIMENSIONS
TO−92
CASE 29−11
ISSUE AL
A
B
R
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
N
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5
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
2N5401
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
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6
ON Semiconductor Website: http://onsemi.com
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For additional information, please contact your
local Sales Representative.
2N5401/D