2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage VCBO 130 160 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg 1.5 12 Watts mW/°C −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 BASE 1 EMITTER TO−92 CASE 29 STYLE 1 12 3 MARKING DIAGRAM 2N54xx THERMAL CHARACTERISTICS Characteristic YWW Symbol Max Unit Thermal Resistance, Junction−to−Ambient RJA 200 °C/W Thermal Resistance, Junction−to−Case RJC 83.3 °C/W Y WW = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 May, 2004 − Rev. 1 1 Publication Order Number: 2N5401/D 2N5401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 150 − 160 − 5.0 − − − 50 50 − 50 50 60 50 − 240 − − − 0.2 0.5 − − 1.0 1.0 100 300 − 6.0 40 200 − 8.0 Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 2N5400 2N5401 Collector−Base Breakdown Voltage (IC = 100 Adc, IE = 0) Vdc V(BR)CBO 2N5400 2N5401 Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 100°C) Vdc Vdc ICBO 2N5401 2N5401 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS fT Current−Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MHz Cobo Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Noise Figure (IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) NF pF − dB 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Package Shipping† 2N5401 TO−92 5000 Unit / Bulk 2N5401RL1 TO−92 2000 Tape & Reel 2N5401RLRA TO−92 2000 Tape & Reel TO−92 (Pb−Free) 2000 Tape & Reel 2N5401RLRM TO−92 2000 Tape & Ammo Box 2N5401ZL1 TO−92 2000 Tape & Ammo Box Device 2N5401RLRAG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2N5401 200 150 h FE, CURRENT GAIN TJ = 125°C 100 25°C 70 50 −55 °C VCE = − 1.0 V VCE = − 5.0 V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 10 20 50 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT (A) µ VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 102 VCE = 30 V IC = ICES 101 TJ = 125°C 100 75°C 10−1 10−2 REVERSE 25°C 10−3 0.3 0.2 FORWARD 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE−EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut−Off Region http://onsemi.com 3 0.6 0.7 2N5401 1.0 0.9 θV, TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C V, VOLTAGE (VOLTS) 0.8 0.7 VBE(sat) @ IC/IB = 10 0.6 0.5 0.4 0.3 0.2 VCE(sat) @ IC/IB = 10 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 2.5 1.5 1.0 0.5 VC for VCE(sat) 0 −0.5 −1.0 −1.5 VB for VBE(sat) −2.0 −2.5 0.1 100 TJ = − 55°C to 135°C 2.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages 100 70 50 C, CAPACITANCE (pF) VCC −30 V 10.2 V 100 10 s INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 F 3.0 k RC Vout RB 5.1 k Vin 100 TJ = 25°C 30 Cibo 20 10 7.0 5.0 Cobo 3.0 1N914 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit 1000 700 500 10 20 Figure 7. Capacitances 2000 IC/IB = 10 TJ = 25°C tr @ VCC = 120 V 300 1000 700 500 tr @ VCC = 30 V 200 t, TIME (ns) t, TIME (ns) 100 Figure 5. Temperature Coefficients VBB +8.8 V Vin 50 100 70 50 10 0.2 0.3 0.5 td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 tf @ VCC = 120 V tf @ VCC = 30 V 200 ts @ VCC = 120 V 100 70 50 30 20 300 IC/IB = 10 TJ = 25°C 30 50 100 20 0.2 0.3 0.5 200 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn−On Time Figure 9. Turn−Off Time http://onsemi.com 4 50 100 200 2N5401 PACKAGE DIMENSIONS TO−92 CASE 29−11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR N http://onsemi.com 5 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− 2N5401 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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