ONSEMI CM1213-06SM

6 and 8-Channel Low Capacitance ESD
Protection Arrays
CM1213
Features
•
•
•
•
•
•
•
•
•
6 or 8 channels of ESD protection
Note: For 1, 2, and 4 channel devices, see the
CM1213A datasheet.
Provides ESD protection to IEC61000-4-2
Level 4
•
±8kV contact discharge
Low channel input capacitance of 1.0pF typical
Minimal capacitance change with temperature
and voltage
Channel input capacitance matching of 0.02pF
typical is ideal for differential signals
Mutual capacitance between signal pin and
adjacent signal pin -0.11pF typical
Zener diode protects supply rail and eliminates
the need for external by-pass capacitors
Each I/O pin can withstand over 1000 ESD
strikes*
Available in SOIC and MSOP, lead-free
packaging
Applications
•
•
•
•
•
•
USB2.0 ports at 480Mbps in desktop PCs,
notebooks and peripherals
IEEE1394 Firewire ports at 400Mbps /
800Mbps
DVI ports, HDMI ports in notebooks, set top
boxes, digital TVs, LCD displays
Serial ATA ports in desktop PCs and hard disk
drives
PCI Express ports
General purpose high-speed data line ESD
protection
©2010 SCILLC. All rights reserved.
April 2010 – Rev. 3
Product Description
The CM1213 family of diode arrays has been
designed to provide ESD protection for electronic
components or sub-systems requiring minimal
capacitive loading. These devices are ideal for
protecting systems with high data and clock rates or
for circuits requiring low capacitive loading. Each
ESD channel consists of a pair of diodes in series
which steer the positive or negative ESD current
pulse to either the positive (VP) or negative (VN)
supply rail. A Zener diode is embedded between VP
and VN, offering two advantages. First, it protects the
VCC rail against ESD strikes, and second, it eliminates
the need for a bypass capacitor that would otherwise
be needed for absorbing positive ESD strikes to
ground. The CM1213 will protect against ESD pulses
up to ±8kV per the IEC 61000-4-2 standard.
These devices are particularly well-suited for
protecting systems using high-speed ports such as
USB2.0, IEEE1394 (Firewire, iLink), Serial ATA,
DVI, HDMI and corresponding ports in removable
storage, digital camcorders, DVD-RW drives and
other applications where extremely low loading
capacitance with ESD protection are required in a
small package footprint.
Publication Order Number:
CM1213/D
CM1213
Block Diagram
Rev. 3 | Page 2 of 17 | www.onsemi.com
CM1213
Pin Descriptions
PIN DESCRIPTIONS
6-CHANNEL, 8-LEAD MSOP-8/SOIC-8 PACKAGES
PIN
NAME
TYPE
DESCRIPTION
1
CH1
I/O
ESD Channel
2
CH2
I/O
ESD Channel
3
VN
GND
Negative voltage supply rail
4
CH3
I/O
ESD Channel
5
CH4
I/O
ESD Channel
6
CH5
I/O
ESD Channel
7
VP
PWR
Positive voltage supply rail
8
CH6
I/O
ESD Channel
PIN DESCRIPTIONS
8-CHANNEL, 10-LEAD MSOP-10 PACKAGE
PIN
NAME
TYPE
DESCRIPTION
1
CH1
I/O
ESD Channel
2
CH2
I/O
ESD Channel
3
CH3
I/O
ESD Channel
4
CH4
I/O
ESD Channel
5
VN
GND
Negative voltage supply rail
6
CH5
I/O
ESD Channel
7
CH6
I/O
ESD Channel
8
VP
PWR
Positive voltage supply rail
9
CH7
I/O
ESD Channel
10
CH8
I/O
ESD Channel
Rev. 3 | Page 3 of 17 | www.onsemi.com
CM1213
Ordering Information
PART NUMBERING INFORMATION
Lead-free Finish
# of Channels
Leads
Package
Ordering Part
1
Number
Part Marking
6
8
SOIC-8
CM1213-06SM
D136
6
8
MSOP-8
CM1213-06MR
D137
8
10
MSOP-10
CM1213-08MR
D138
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNITS
6.0
V
Operating Temperature Range
-40 to +85
°C
Storage Temperature Range
-65 to +150
°C
(VN - 0.5) to (VP + 0.5)
V
Operating Supply Voltage (VP - VN)
DC Voltage at any channel input
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
Package Power Rating
MSOP-8 Package (CM1213-06MR)
MSOP-10 Package (CM1213-08MR)
SOIC-8 Package (CM1213-06SM)
Rev. 3 | Page 4 of 17 | www.onsemi.com
RATING
UNITS
-40 to +85
°C
400
400
600
mW
mW
mW
CM1213
ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
(SEE NOTE 1)
MIN
TYP
MAX
UNITS
3.3
5.5
V
8.0
µA
0.80
0.80
0.95
0.95
V
V
VP
Operating Supply Voltage (VP-VN)
IP
Operating Supply Current
(VP-VN)=3.3V
VF
Diode Forward Voltage
Top Diode
Bottom Diode
IF = 8mA; TA=25°C
ILEAK
Channel Leakage Current
TA=25°C; VP=5V, VN=0V
±0.1
±1.0
µA
CIN
Channel Input Capacitance
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V;
1.0
1.5
pF
∆C
Channel Input Capacitance
Matching
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V;
0.02
pF
CMUTUAL
Mutual Capacitance between
signal pin and adjacent signal pin
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V;
0.11
pF
VESD
ESD Protection
Peak Discharge Voltage at any
channel input, in system
Contact discharge per
IEC 61000-4-2 standard
IN
VCL
RDYN
0.60
0.60
Notes 3 and 4; TA=25°C
Channel Clamp Voltage
Positive Transients
Negative Transients
TA=25°C, IPP = 1A, tP = 8/20uS;
Note 4
Dynamic Resistance
Positive Transients
Negative Transients
IPP = 1A, tP = 8/20uS
Any I/O pin to Ground; Note 4
Note 1:
Note 2:
Note 3:
Note 4:
kV
±8
+8.8
-1.4
V
V
0.7
0.4
Ω
Ω
All parameters specified at TA = -40°C to +85°C unless otherwise noted.
Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VP = 3.3V, VN grounded.
Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 3.3V, VN grounded.
These measurements performed with no external capacitor on VP (VP floating).
Rev. 3 | Page 5 of 17 | www.onsemi.com
CM1213
Ordering Information
PART NUMBERING INFORMATION
1
Bumps
Package
Ordering Part Number
Part Marking
10
CSP
CM1205-08CP
120508
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Range
RATING
UNITS
-65 to +150
°C
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
Rev. 3 | Page 6 of 17 | www.onsemi.com
RATING
UNITS
-40 to +85
°C
CM1213
Specifications (cont’d)
ELECTRICAL OPERATING CHARACTERISTICS1
SYMBOL
PARAMETER
CONDITIONS
VREV
Reverse Standoff Voltage
IDIODE=10µA
ILEAK
Leakage Current
VIN=3.3V DC
VSIG
Signal Clamp Voltage
Positive Clamp
Negative Clamp
ILOAD = 10mA
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
Notes 2 & 3
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
Notes 2 & 3
Channel Capacitance
At 2.5V DC, f = 1MHz,
Note 3
VESD
VCL
C
MIN
TYP
MAX
6.0
5.6
-1.2
6.8
-0.8
UNITS
V
100
nA
8.0
-0.4
V
V
+30
kV
+25
kV
+12
-8
39
V
V
47
pF
Note 1: TA=25°C unless otherwise specified. GND in this document refers to the lower supply voltage.
Note 2: ESD applied to channel pins with respect to GND, one at a time. All other channels are open. All GND pins tied to
ground.
Note 3: These parameters are guaranteed by design and characterization.
Rev. 3 | Page 7 of 17 | www.onsemi.com
CM1213
Performance Information
Input Channel Capacitance Performance Curves
Rev. 3 | Page 8 of 17 | www.onsemi.com
CM1213
Performance Information (Cont’d)
Typical Filter Performance (nominal conditions unless specified otherwise, 50 Ohm Environment)
Figure 1. Insertion Loss (S21) VS. Frequency (0V DC Bias, VP=3.3V)
Figure 2. Insertion Loss (S21) VS. Frequency (2.5V DC Bias, VP=3.3V)
Rev. 3 | Page 9 of 17 | www.onsemi.com
CM1213
Application Information
Design Considerations
In order to realize the maximum protection against ESD pulses, care must be taken in the PCB layout to
minimize parasitic series inductances on the Supply/Ground rails as well as the signal trace segment between
the signal input (typically a connector) and the ESD protection device. Refer to Application of Positive ESD
Pulse between Input Channel and Ground, which illustrates an example of a positive ESD pulse striking an input
channel. The parasitic series inductance back to the power supply is represented by L1 and L2. The voltage VCL
on the line being protected is:
VCL
=
Fwd
+ L2 x d(IESD ) / dt
voltage
drop
of
D1
+
VSUPPLY
+
L1
x
d(IESD
)
/
dt
where IESD is the ESD current pulse, and VSUPPLY is the positive supply voltage.
An ESD current pulse can rise from zero to its peak value in a very short time. As an example, a level 4 contact
discharge per the IEC61000-4-2 standard results in a current pulse that rises from zero to 30 Amps in 1ns. Here
-9
d(IESD)/dt can be approximated by ∆IESD/∆t, or 30/(1x10 ). So just 10nH of series inductance (L1 and L2 combined)
will lead to a 300V increment in VCL!
Similarly for negative ESD pulses, parasitic series inductance from the VN pin to the ground rail will lead to
drastically increased negative voltage on the line being protected.
The CM1213 has an integrated Zener diode between VP and VN. This greatly reduces the effect of supply rail
inductance L2 on VCL by clamping VP at the breakdown voltage of the Zener diode. However, for the lowest
possible VCL, especially when VP is biased at a voltage significantly below the Zener breakdown voltage, it is
recommended that a 0.22µF ceramic chip capacitor be connected between VP and the ground plane.
As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of
expected electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to
the VP pin of the Protection Array as possible, with minimum PCB trace lengths to the power supply, ground
planes and between the signal input and the ESD device to minimize stray series inductance.
Additional Information
See also California Micro Devices Application Note AP209, “Design Considerations for ESD Protection”, in the
Applications section at www.calmicro.com.
Figure 3. Application of Positive ESD Pulse between Input Channel and Ground
Rev. 3 | Page 10 of 17 | www.onsemi.com
CM1213
Mechanical Details
The CM1213 is available in MSOP-8, SOIC-8, and MSOP-10 packages with a lead-free finishing.
SOIC-8 Mechanical Specifications
The CM1213-06SM is supplied in an 8-pin SOIC package. Dimensions are presented below.
*
PACKAGE DIMENSIONS
Package
SOIC
Pins
8
Dimensions
Millimeters
Inches
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
B
0.33
0.51
0.013
0.020
C
0.19
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.19
0.150
0.165
e
1.27 BSC
0.050 BSC
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
# per tape
and reel
2500 pieces
Controlling dimension: inches
Package Dimensions for SOIC-8
Rev. 3 | Page 11 of 17 | www.onsemi.com
CM1213
Tape and Reel Specifications
PART NUMBER
PACKAGE SIZE
(mm)
POCKET SIZE (mm)
B0 X A0 X K0
TAPE WIDTH
W
REEL
DIAMETER
QTY PER
REEL
P0
P1
CM1213-06SM
4.90 X 6.00 X 1.55
5.30 X 6.50 X 2.10
12mm
330mm (13")
2500
4mm
8mm
Rev. 3 | Page 12 of 17 | www.onsemi.com
CM1213
Mechanical Details (Cont’d)
MSOP-8 Mechanical Specifications:
The CM1213-06MR is supplied in an 8-pin MSOP package. Dimensions are presented below.
PACKAGE DIMENSIONS
TOP VIEW
MSOP
Package
D
8
8
Pins
Dimensions
Millimeters
7
Max
Min
Max
A
0.75
0.95
0.030
0.037
A1
0.05
0.15
0.002
0.006
B
0.28
0.38
0.011
0.015
C
0.13
0.23
0.005
0.009
D
2.90
3.10
0.114
0.122
E
2.90
3.10
0.114
0.122
E
H
Pin 1
Marking
1
H
L
# per tape
and reel
0.65 BSC
0.026 BSC
4.90 BSC
0.40
0.016
4000 pieces
2
3
4
SIDE VIEW
A
SEAT ING
PLANE
A1
B
0.193 BSC
0.70
5
Inches
Min
e
6
0.028
e
END VIEW
C
Controlling dimension: millimeters
L
Package Dimensions for MSOP-8
Rev. 3 | Page 13 of 17 | www.onsemi.com
CM1213
Tape and Reel Specifications
PART NUMBER
PACKAGE SIZE
(mm)
POCKET SIZE (mm)
B0 X A0 X K0
TAPE WIDTH
W
REEL
DIAMETER
QTY PER
REEL
P0
P1
CM1213-06MR
3.00 X 3.00 X 0.85
3.3 X 5.3 X1.3
12mm
330mm (13")
4000
4mm
8mm
Rev. 3 | Page 14 of 17 | www.onsemi.com
CM1213
Mechanical Details (cont’d)
MSOP-10 Mechanical Specifications
The CM1213-08MR is supplied in a 10-pin MSOP package. Dimensions are presented below.
*
PACKAGE DIMENSIONS
TOP VIEW
MSOP
Package
10
Pins
Dimensions
D
10
Millimeters
Max
Min
Max
A
0.75
0.95
0.028
0.038
A1
0.05
0.15
0.002
0.006
B
0.17
0.33
0.007
0.013
C
0.13
0.23
0.005
0.009
D
2.90
3.10
0.114
0.122
E
2.90
3.10
0.114
0.122
H
L
8
6
7
Inches
Min
e
9
E
H
Pin 1
Marking
1
2
3
4
5
SIDE VIEW
A
0.50 BSC
0.0196 BSC
4.90 BSC
0.40
0.70
SEAT ING
PLANE
A1
B
0.193 BSC
0.0137
e
0.029
END VIEW
# per tape
and reel
4000
C
Controlling dimension: inches
L
Package Dimensions for MSOP-10
Rev. 3 | Page 15 of 17 | www.onsemi.com
CM1213
Tape and Reel Specifications
PART NUMBER
PACKAGE SIZE
(mm)
POCKET SIZE (mm)
B0 X A0 X K0
TAPE WIDTH
W
REEL
DIAMETER
QTY PER
REEL
P0
P1
CM1213-08MR
3.00 X 3.00 X 0.85
3.3 X 5.3 X1.3
12mm
330mm (13")
4000
4mm
8mm
Rev. 3 | Page 16 of 17 | www.onsemi.com
CM1213
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any
products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising
out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical”
parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the
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Rev. 3 | Page 17 of 17 | www.onsemi.com
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