DMS3017SSD ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(on) – minimizes conduction loss • Low VSD – reducing the losses due to body diode construction • Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies • Avalanche rugged – IAR and EAR rated Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.072 grams (approximate) D2 G2 D2 S2/D1 G1 S2/D1 S1 S2/D1 Top View Top View Internal Schematic Q1 Q2 D1 D2 G1 G2 S1 S2 N-Channel MOSFET + Integrated Schottky Diode N-Channel MOSFET Ordering Information (Note 3) Part Number DMS3017SSD-13 Notes: Case SO-8 Packaging 2500 / Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Top View 8 5 Logo S3017SD Part no. YY WW Week: 01 ~ 53 Year: “09” = 2009 1 DMS3017SSD Document number: DS35052 Rev. 2 - 2 4 1 of 10 www.diodes.com October 2010 © Diodes Incorporated DMS3017SSD Maximum Ratings – Q1 @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Pulsed Drain Current (Note 6) Avalanche Current (Notes 6 & 7) Repetitive Avalanche Energy (Notes 6 & 7) L = 0.1mH ID Value 30 ±20 8.0 6.5 ID 10 7.8 ID IDM IAR EAR 8.7 7.0 60 16 12.8 Unit V V A A A A A mJ Maximum Ratings – Q2 @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Pulsed Drain Current (Note 6) Avalanche Current (Notes 6 & 7) Repetitive Avalanche Energy (Notes 6 & 7) L = 0.1mH ID Value 30 ±20 6.0 4.7 ID 7.2 6.0 Unit V V A A EAR 6.0 5.0 60 16 12.8 A A mJ Symbol PD RθJA PD RθJA TJ, TSTG Value 1.19 107 1.79 70 -55 to +150 Unit W °C/W W °C/W °C ID IDM IAR A Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) Operating and Storage Temperature Range Notes: 4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. The value in any given application depends on the user’s specific board design. Device contains two active die running at equal power. 5. Device mounted on 1 inch x 1 inch FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Device contains two active die running at equal power. 6. Repetitive rating, pulse width limited by junction temperature. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C DMS3017SSD Document number: DS35052 Rev. 2 - 2 2 of 10 www.diodes.com October 2010 © Diodes Incorporated DMS3017SSD Electrical Characteristics – Q1 @ TA = 25°C unless otherwise stated Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 100 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 - 2.5 V RDS (ON) - 8.5 9.5 12 15 mΩ |Yfs| VSD - 18 0.45 0.60 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 9.5A VGS = 4.5V, ID = 8.8A VDS = 5V, ID = 9.5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1276 160 136 1.48 14.3 30.6 3.4 4.3 15.8 27.8 29.7 13.6 2.7 - pF Ω Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 4.5V, ID = 8.8A nC VDS = 15V, VGS = 10V, ID = 8.8A ns VGS = 4.5V, VDS = 15V, RG = 1.8Ω, ID = 8.8A 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 20 30 VGS = 10V VDS = 5V VGS = 4.5V 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.0V VGS = 3.5V 15 10 5 15 10 VGS = 150°C VGS = 125°C VGS = 85°C 5 VGS = 3.0V VGS = 25°C VGS = 2.5V VGS = -55°C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMS3017SSD Document number: DS35052 Rev. 2 - 2 5 0 3 of 10 www.diodes.com 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 October 2010 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0.04 0.03 VGS = 4.5V 0.02 VGS = 10V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.7 VGS = 4.5V ID = 5A 1.5 VGS = 10V ID = 10A 1.3 1.1 0.9 0.7 0.5 -50 0.04 VGS = 10V 0.03 TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 0.05 0.04 VGS = 4.5V ID = 5A 0.03 0.02 VGS = 10V ID = 10A 0.01 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 0 -50 Fig. 5 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 20 2.0 18 1.8 16 1.6 ID = 1mA 1.4 1.2 ID = 250µA 1.0 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) TA = 150°C TA = 125°C 30 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMS3017SSD 14 12 TA = 25°C 10 8 6 4 0.8 2 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMS3017SSD Document number: DS35052 Rev. 2 - 2 0 0.2 4 of 10 www.diodes.com 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 October 2010 © Diodes Incorporated DMS3017SSD 10,000 1,000 f = 1MHz 100 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) Ciss Coss Crss T A = 150°C 1,000 T A = 125°C 100 T A = 85°C 10 TA = 25°C 1 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0 30 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30 VGS, GATE-SOURCE VOLTAGE (V) 10 8 VDS = 15V ID = 10A 6 4 2 0 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMS3017SSD Document number: DS35052 Rev. 2 - 2 12 5 of 10 www.diodes.com October 2010 © Diodes Incorporated DMS3017SSD Electrical Characteristics – Q2 @ TA = 25°C unless otherwise stated Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 - 2.4 V RDS (ON) - 15 25 22 32 mΩ |Yfs| VSD - 2.5 0.7 1 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 8.8A VGS = 4.5V, ID = 7A VDS = 5V, ID = 8.8A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 478.9 96.7 61.4 1.1 5.0 10.5 1.8 1.6 2.9 7.9 14.6 3.1 - pF Ω nC ns Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 4.5V, ID = 10A VDS = 15V, VGS = 10V, ID = 10A VGS = 10V, VDS = 15V, RG = 3Ω, RL = 1.5Ω 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 20 30 VGS = 10V VDS = 5V VGS = 4.5V 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.0V VGS = 3.5V 15 10 5 15 10 VGS = 150°C VGS = 125°C VGS = 85°C 5 VGS = 3.0V VGS = 25°C VGS = 2.5V VGS = -55°C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristic DMS3017SSD Document number: DS35052 Rev. 2 - 2 5 0 6 of 10 www.diodes.com 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 13 Typical Transfer Characteristic 4 October 2010 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0.04 0.03 VGS = 4.5V 0.02 VGS = 10V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.7 VGS = 4.5V ID = 5A 1.5 VGS = 10V ID = 10A 1.3 1.1 0.9 0.7 0.5 -50 0.04 VGS = 10V 0.03 TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 0.05 0.04 VGS = 4.5V ID = 5A 0.03 0.02 VGS = 10V ID = 10A 0.01 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 0 -50 Fig. 16 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 17 On-Resistance Variation with Temperature 20 2.0 18 1.8 16 1.6 ID = 1mA 1.4 1.2 ID = 250µA 1.0 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) TA = 150°C TA = 125°C 30 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMS3017SSD 14 12 TA = 25°C 10 8 6 4 0.8 2 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature DMS3017SSD Document number: DS35052 Rev. 2 - 2 0 0.2 7 of 10 www.diodes.com 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current October 2010 © Diodes Incorporated DMS3017SSD 10,000 1,000 f = 1MHz 100 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) Ciss Coss Crss T A = 150°C 1,000 T A = 125°C 100 T A = 85°C 10 TA = 25°C 1 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Total Capacitance 0 30 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Leakage Current vs. Drain-Source Voltage 30 VGS, GATE-SOURCE VOLTAGE (V) 10 8 VDS = 15V ID = 10A 6 4 2 0 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Fig. 22 Gate-Charge Characteristics 12 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA (t) = r(t) * R θJA RθJA = 113°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMS3017SSD Document number: DS35052 Rev. 2 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 23 Transient Thermal Response 8 of 10 www.diodes.com 10 100 1,000 October 2010 © Diodes Incorporated DMS3017SSD 0.254 Package Outline Dimensions E1 E Gauge Plane Seating Plane A1 L Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMS3017SSD Document number: DS35052 Rev. 2 - 2 9 of 10 www.diodes.com October 2010 © Diodes Incorporated DMS3017SSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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