NTD6600N Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK Features • Source−to−Drain Diode Recovery Time Comparable to a V(BR)DSS RDS(on) TYP ID MAX 100 V 118 mW @ 5.0 V 12 A Typical Applications N−Channel • PWM Motor Controls • Power Supplies • Converters D MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 100 Vdc Drain−to−Source Voltage (RGS = 1.0 MW) VDGR 100 Vdc VGS ± 20 Vdc ID ID 12 9.0 44 Adc 56.6 0.38 1.76 1.28 W W/°C W W TJ, Tstg −55 to +175 °C EAS 72 mJ Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA =100°C Drain Current − Pulsed (Note 3) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Temperature for Soldering Purposes, (1/8″ from case for 10 s) IDM PD S MARKING DIAGRAMS 4 Drain 4 Apk 1 2 3 2 1 3 Drain Gate Source 4 Drain 4 °C/W RqJC RqJA RqJA 2.65 85 117 TL 260 DPAK CASE 369C (Surface Mounted) STYLE 2 1 2 DPAK−3 CASE 369D (Straight Lead) STYLE 2 3 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 0.5 sq in pad size. 2. When surface mounted to an FR4 board using the minimum recommended pad size. 3. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%. YWW NT 6600G Rating G YWW NT 6600G • • • http://onsemi.com Discrete Fast Recovery Diode Avalanche Energy Specified Logic Level Pb−Free Packages are Available 1 2 3 Gate Drain Source Y WW NT6600 G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 4 1 Publication Order Number: NTD6600N/D NTD6600N ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 100 − − − − − − 1.0 10 − − ± 100 nAdc 1.0 − 1.5 −4.4 2.0 − Vdc mV/°C OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) V(BR)DSS Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS Vdc mAdc ON CHARACTERISTICS Gate Threshold Voltage VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−State Resistance (VGS = 5.0 Vdc, ID = 6.0 Adc) RDS(on) − 118 146 mW Drain−to−Source On−Voltage (VGS = 5.0 Vdc, ID = 12 Adc) VDS(on) − 1.5 2.2 Vdc gFS − 10 − mhos Ciss − 463 700 pF Coss − 116 225 Crss − 36 75 td(on) − 10.5 20 tr − 75 140 td(off) − 26 40 tf − 50 90 Qtot − 11.3 20 Qgs − 1.9 − Qgd − 7.4 − VSD − − 0.90 0.80 1.4 − Vdc trr − 80 − ns ta − 50 − tb − 30 − QRR − 0.240 − Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 4 & 5) Turn−On Delay Time Rise Time (VDD = 80 Vdc, ID = 6.0 Adc, VGS = 5.0 Vdc, RG = 9.1 W) Turn−Off Delay Time Fall Time Total Gate Charge (VDS = 80 Vdc, ID = 6.0 Adc, VGS = 5.0 Vdc) Gate−to−Source Charge Gate−to−Drain Charge ns nC BODY−DRAIN DIODE RATINGS (Note 4) Diode Forward On−Voltage (IS = 12 Adc, VGS = 0 Vdc) (IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 12 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge mC 4. Indicates Pulse Test: P.W. = 300 ms max, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device NTD6600N NTD6600N−1 NTD6600N−1G NTD6600NT4 NTD6600NT4G Package Shipping † DPAK DPAK−3 75 Units/Rail DPAK−3 (Pb−Free) DPAK DPAK (Pb−Free) 2500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD6600N TYPICAL CHARACTERISTICS 24 21 4.2 V 10 V 5.5 V 25 TJ = 25°C 4V VDS ≥ 10 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) VGS = 9 V 3.8 V 18 15 3.4 V 12 9 3V 6 2.6 V 3 0 10 TJ = 150°C TJ = −55°C 5 2 6 4 8 0 10 0 1 2 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.4 VGS = 5 V 0.3 TJ = 150°C 0.2 TJ = 25°C 0.1 TJ = −55°C 0 0 4 8 12 16 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS, DRAIN−TO−SOURCE VOLTAGE (V) 6 0.20 TJ = 25°C 0.18 0.16 0.14 VGS = 5 V 0.12 0.10 VGS = 10 V 0.08 0.06 0.04 0 4 8 12 16 20 24 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Temperature 10000 2.5 VGS = 0 V ID = 12 A 2.25 V = 5 V GS 2.0 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 15 TJ = 25°C 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 20 TJ = 150°C 1000 1.75 1.5 1.25 1.0 100 TJ = 125°C 0.75 0.5 −50 −25 0 25 50 75 100 125 150 175 10 0 10 20 30 40 50 60 70 80 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 3 90 100 NTD6600N TJ = 25°C VDS = 0 V VGS = 0 V Ciss 1250 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 1500 1000 Ciss 750 Crss 500 Coss 250 Crss 0 10 5 0 5 10 15 20 25 8 100 VDS 80 6 60 4 50 Q1 30 2 20 ID = 12 A TJ = 25°C 0 0 2 4 6 8 10 12 14 16 10 0 18 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 12 1000 100 IS, SOURCE CURRENT (AMPS) VDS = 80 V ID = 6 A VGS = 5 V t, TIME (ns) 40 Q2 Figure 7. Capacitance Variation tr tf td(off) td(on) 10 VGS = 0 V 10 1 10 6 4 2 100 0 0.25 0.5 0.75 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current EAS, SINGLE PULSE DRAIN −TO − SOURCE AVALANCE ENGERGY (mJ) 1000 VGS = 20 V SINGLE PULSE TC = 25°C 10 ms 10 100 ms 1.0 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 TJ = 25°C 8 0 1 I D, DRAIN CURRENT (AMPS) 70 QT VGS VDS DRAIN−TO−SOURCE VOLTAGE (V) 100 90 VGS VDS, DRAIN−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 1.0 10 1 ms 10 ms dc 100 80 ID = 12 A 70 60 50 40 30 20 10 0 25 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 1.0 175 NTD6600N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− NTD6600N PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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