NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. http://onsemi.com 20 A, 350 V VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V Features • • • • • • • • • • Ideal for Coil−on−Plug and Driver−on−Coil Applications DPAK Package Offers Smaller Footprint for Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) These are Pb−Free Devices C RG G RGE E 4 Applications 1 2 • Ignition Systems DPAK CASE 369C STYLE 7 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage Rating VCES 390 V Collector−Gate Voltage VCER 390 V Gate−Emitter Voltage VGE "15 V Collector Current−Continuous @ TC = 25°C − Pulsed IC 20 50 ADC AAC Continuous Gate Current IG 1.0 mA Transient Gate Current (t≤2 ms, f≤100 Hz) IG 20 mA ESD (Charged−Device Model) ESD 2.0 kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD 400 V PD 125 0.83 W W/°C TJ, Tstg −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating & Storage Temperature Range kV 8.0 January, 2012 − Rev. 9 MARKING DIAGRAM 1 G C E Y WW NGD8205x x G YWW NGD 8205xG C = Year = Work Week = Device Code = N or A = Pb−Free Package ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2012 3 1 Device Package Shipping† NGD8205NT4G DPAK 2500 / Tape & Reel (Pb−Free) NGD8205ANT4G DPAK 2500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NGD8205N/D NGD8205N, NGD8205AN UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS Value 250 200 180 EAS(R) 2000 Unit mJ mJ THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case RqJC 1.2 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 95 °C/W TL 275 °C Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40°C to 175°C 325 350 375 V IC = 10 mA TJ = −40°C to 175°C 340 365 390 VGE = 0 V, VCE = 15 V TJ = 25°C 0.1 1.0 mA mA OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current ICES VCE = 175 V, VGE = 0 V Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA Reverse Collector−Emitter Leakage Current ICES(R) VCE = −24 V − NGD8205 TJ = 25°C 0.5 1.5 10 TJ = 175°C 1.0 25 100* TJ = −40°C 0.4 0.8 5.0 TJ = 25°C 30 35 39 TJ = 175°C 35 39 45* TJ = −40°C 30 33 37 TJ = 25°C 0.05 0.25 0.5 TJ = 175°C 1.0 12.5 25 TJ = −40°C 0.005 0.03 0.25 Gate−Emitter Leakage Current mA TJ = 25°C 0.05 0.25 1.0 VCE = −24 V − NGD8205A TJ = 175°C 1.0 12.5 25 0.03 0.25 BVGES IG = "5.0 mA TJ = −40°C to 175°C 12 12.5 14 V IGES VGE = "5.0 V TJ = −40°C to 175°C 200 300 350* mA TJ = −40°C Gate−Emitter Clamp Voltage V Gate Resistor (Optional) RG TJ = −40°C to 175°C 70 Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 16 25 kW V W ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 2 TJ = 25°C 1.5 1.8 2.1 TJ = 175°C 0.7 1.0 1.3 TJ = −40°C 1.7 2.0 2.3* 3.8 4.6 6.0 mV/°C NGD8205N, NGD8205AN ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 0.95 1.15 1.35 V TJ = 175°C 0.7 0.95 1.15 TJ = −40°C 1.0 1.3 1.40 TJ = 25°C 0.95 1.25 1.45 TJ = 175°C 0.8 1.05 1.25 TJ = −40°C 1.1 1.4 1.5 TJ = 25°C 0.85 1.15 1.4 TJ = 175°C 0.7 0.95 1.2 TJ = −40°C 1.0 1.3 1.6* TJ = 25°C 1.0 1.3 1.6 TJ = 175°C 0.8 1.05 1.4 TJ = −40°C 1.1 1.4 1.7* TJ = 25°C 1.15 1.45 1.7 TJ = 175°C 1.0 1.3 1.55 TJ = −40°C 1.25 1.55 1.8* 1.6 1.9 ON CHARACTERISTICS (Note 4) Collector−to−Emitter On−Voltage VCE(on) IC = 6.5 A, VGE = 3.7 V IC = 9.0 A, VGE = 3.9 V IC = 7.5 A, VGE = 4.5 V IC = 10 A, VGE = 4.5 V IC = 15 A, VGE = 4.5 V Forward Transconductance gfs TJ = 25°C 1.3 IC = 20 A, VGE = 4.5 V TJ = 175°C 1.2 1.5 1.8 TJ = −40°C 1.4 1.75 2.0* IC = 6.0 A, VCE = 5.0 V TJ = 25°C 10 18 25 Mhos 1100 1300 1500 pF 70 80 90 18 20 22 TJ = 25°C 6.0 8.0 10 TJ = 175°C 6.0 8.0 10 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 8.0 10.5 14 TJ = 25°C 3.0 5.0 7.0 TJ = 175°C 5.0 7.0 9.0 TJ = 25°C 1.5 3.0 4.5 TJ = 175°C 5.0 7.0 10 TJ = 25°C 1.0 1.5 2.0 TJ = 175°C 1.0 1.5 2.0 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 3.0 5.0 7.0 DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS f = 10 kHz, VCE = 25 V TJ = 25°C SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−Off Delay Time (Inductive) td(off) tf td(off) Fall Time (Inductive) tf Turn−On Delay Time td(on) Rise Time VCC = 300 V, IC = 9.0 A RG = 1.0 kW, RL = 33 W, VGE = 5.0 V tr VCC = 300 V, IC = 9.0 A RG = 1.0 kW, L = 300 mH, VGE = 5.0 V VCC = 14 V, IC = 9.0 A RG = 1.0 kW, RL = 1.5 W, VGE = 5.0 V *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 mSec NGD8205N, NGD8205AN TYPICAL ELECTRICAL CHARACTERISTICS 400 30 TJ = 25°C IA, AVALANCHE CURRENT (A) SCIS ENERGY (mJ) 350 300 250 TJ = 175°C 200 150 100 VCC = 14 V VGE = 5.0 V RG = 1000 W 50 0 0 2 6 4 8 VCC = 14 V VGE = 5.0 V RG = 1000 W 25 L = 1.8 mH 20 L = 3.0 mH 15 10 L = 10 mH 5 0 −50 10 −25 INDUCTOR (mH) IC, COLLECTOR CURRENT (A) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 60 IC = 25 A IC = 20 A IC = 15 A 1.25 IC = 10 A 1.0 IC = 7.5 A 0.75 0.5 0.25 VGE = 4.5 V 0.0 −50 −25 0 25 50 75 100 150 125 50 100 125 150 175 4V TJ = 175°C 40 3.5 V 30 3V 20 2.5 V 10 0 175 4.5 V 5V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature Figure 4. Collector Current vs. Collector−to−Emitter Voltage 60 60 VGE = 10 V 50 4.5 V 4V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 75 VGE = 10 V TJ, JUNCTION TEMPERATURE (°C) 5V 40 TJ = 25°C 3.5 V 30 20 3V 10 0 50 Figure 2. Open Secondary Avalanche Current vs. Temperature 2.0 1.5 25 TJ, JUNCTION TEMPERATURE (°C) Figure 1. Self Clamped Inductive Switching 1.75 0 2.5 V 0 1 2 3 4 5 6 7 VGE = 10 V 4V 50 5V 40 TJ = −40°C 3.5 V 30 20 3V 10 0 8 4.5 V 2.5 V 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1 2 3 4 5 6 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs. Collector−to−Emitter Voltage Figure 6. Collector Current vs. Collector−to−Emitter Voltage http://onsemi.com 4 8 NGD8205N, NGD8205AN TYPICAL ELECTRICAL CHARACTERISTICS 100000 VCE = 5 V 40 COLLECTOR TO EMITTER LEAKAGE CURRENT (mA) IC, COLLECTOR CURRENT (A) 45 10000 35 30 25 20 TJ = 25°C 15 10 TJ = 175°C 5 0 0 0.5 1 1.5 TJ = −40°C 2 2.5 3 3.5 4 10 VCE = 175 V 1.0 0.1 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temperature 10000 2.25 Mean 1.75 Mean − 4 s 1.50 Ciss 1000 C, CAPACITANCE (pF) Mean + 4 s 2.00 1.25 1.00 0.75 0.50 Coss 100 Crss 10 1.0 0.25 0 −50 −25 0 25 50 75 100 125 150 0.1 175 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 9. Gate Threshold Voltage vs. Temperature Figure 10. Capacitance vs. Collector−to−Emitter Voltage 12 12 10 10 tfall 8 tdelay 6 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A RL = 33 W 4 2 0 25 0 TJ, JUNCTION TEMPERATURE (°C) SWITCHING TIME (ms) GATE THRESHOLD VOLTAGE (V) 100 VGE, GATE TO EMITTER VOLTAGE (V) 2.50 SWITCHING TIME (ms) VCE = −24 V 1000 50 75 100 125 150 8 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A L = 300 mH 25 tdelay 6 tfall 4 2 0 25 175 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Resistive Switching Fall Time vs. Temperature Figure 12. Inductive Switching Fall Time vs. Temperature http://onsemi.com 5 R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) NGD8205N, NGD8205AN 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) t1 0.1 t2 Single Pulse 0.01 0.000001 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 0.1 TJ(pk) − TA = P(pk) RqJA(t) For D=1: RqJC X R(t) for t ≤ 0.1 s 1 10 100 1000 t,TIME (S) RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient) 10 1 Duty Cycle = 0.5 0.2 0.1 0.05 t1 0.02 0.01 0.01 0.000001 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) 0.1 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.00001 TJ(pk) − TA = P(pk) RqJC(t) 0.0001 0.001 0.01 0.1 t,TIME (S) Figure 14. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) http://onsemi.com 6 1 10 NGD8205N, NGD8205AN PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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