NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift during changes in the supply voltage and over the ambient temperature range. http://onsemi.com COLLECTOR 3 Features • • • • 1 BASE High Gain Bandwidth Product: fT = 2000 MHz Minimum Tightly Controlled hFE Range: hFE = 120 to 250 Low Feedback Capacitance: CRE = 0.45 pF Typical Pb−Free Package is Available 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Units Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 3.0 V IC 50 mA Collector Current Electrostatic Discharge ESD 1 SOT−323/SC−70 CASE 419 STYLE 3 HBM − Class 1C MM − Class A THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Symbol Max Unit PD 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) mW 3M M G G mW/°C Thermal Resistance, Junction-to-Ambient RqJA 618 (Note 1) 403 (Note 2) °C/W Thermal Resistance, Junction-to-Lead RqJL 280 (Note 1) 332 (Note 2) °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad 1 3M = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † NSF2250WT1 SOT−323 3000/Tape & Reel NSF2250WT1G SOT−323 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 5 1 Publication Order Number: NSF2250WT1/D NSF2250WT1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Collector Cutoff Current VCB = 12 V, IE = 0 ICBO DC Current Gain VCE = 10 V, IC = 5.0 mA hFE Collector Saturation Voltage IC = 10 mA, IB = 1.0 mA VCE(sat) Gain Bandwidth Product VCE = 3 V, IE = −5.0 mA fT Output Capacitance VCB = 3 V, IE = 0 mA, f = 1.0 MHz − − 0.1 120 − 250 − − 0.5 2.0 2.3 − − 0.7 1.2 − 3.5 8.0 − 0.45 − V GHz pF ps CRE pF 300 250 200 150 100 RqJA = 403°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 2 Unit − 350 PD, POWER DISSIPATION (mW) Max mA CCSrb’b Feedback Capacitance VCB = 10 V, IE = 0 mA, f = 1.0 MHz 0 −50 Typ COB Collector to Base Time Constant VCE = 3 V, IE = −5.0 mA, f = 31.9 MHz 50 Min 150 NSF2250WT1 350 300 200 VCE = 12 V hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 250 150 5V 3V 100 50 TA = 125°C 250 200 25°C 150 100 −55°C 50 VCE = 5 V 0 0.1 1 10 hFE, DC CURRENT GAIN 0 100 0.1 Figure 2. DC Current Gain versus Collector Current CRE, FEEDBACK CAPACITANCE (pF) VCE = 12 V 1000 100 100 Figure 4. Gain Bandwidth Product versus Collector Current 10 f = 1 MHz TA = 25°C 1 0.1 1 10 VCB, COLLECTOR BASE VOLTAGE (VOLTS) 1.4 1.2 1 0.8 0.6 0.4 f = 1 MHz TA = 25°C 0.2 0 0 100 Figure 5. Device Capacitance versus Collector Base Voltage 1.6 Cob, CAPACITANCE (pF) ft, GAIN BANDWIDTH PRODUCT (MHz) 5V 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. DC Current Gain versus Collector Current 10,000 0.1 1 10 IC, COLLECTOR CURRENT 5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 6. Output Capacitance http://onsemi.com 3 35 NSF2250WT1 TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25°C) Freq MHz S11 Mag S21 S12 S22 Ang Mag Ang Mag Ang Mag Ang VCE = 2.5 V, IC = 2.5 mA 50 0.926 −14.124 6.803 162.639 0.018 82.792 0.973 −7.062 100 0.855 −26.794 6.224 148.649 0.034 73.296 0.921 −12.818 200 0.667 −47.287 5.033 126.317 0.058 62.292 0.807 −19.210 300 0.513 −60.931 4.072 110.981 0.074 58.641 0.736 −21.979 400 0.411 −70.342 3.326 100.524 0.090 57.333 0.694 −23.695 500 0.342 −77.461 2.831 92.771 0.104 56.067 0.670 −25.311 600 0.297 −84.335 2.445 86.222 0.117 55.166 0.651 −27.095 700 0.261 −90.986 2.154 80.493 0.131 53.800 0.637 −29.095 800 0.236 −97.798 1.935 75.382 0.144 52.087 0.627 −31.026 900 0.218 −104.905 1.755 70.672 0.155 50.745 0.617 −33.167 1000 0.205 −112.449 1.617 66.258 0.168 49.386 0.608 −35.352 1500 0.190 −147.224 1.200 48.079 0.219 42.418 0.575 −46.016 2000 0.215 −171.677 1.011 33.299 0.258 35.910 0.544 −58.267 2500 0.230 −172.291 0.889 20.271 0.294 31.024 0.510 −68.713 3000 0.236 −155.125 0.866 10.984 0.340 28.868 0.450 −81.517 TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25°C) Freq MHz S11 Mag S21 S12 S22 Ang Mag Ang Mag Ang Mag Ang VCE = 3 V, IC = 5 mA 50 0.858 −20.126 12.065 156.269 0.017 78.802 0.945 −10.278 100 0.733 −36.552 10.452 139.116 0.029 69.100 0.850 −16.656 200 0.493 −58.358 7.472 115.678 0.047 62.893 0.712 −20.497 300 0.362 −69.976 5.544 103.053 0.062 62.188 0.653 −21.545 400 0.288 −78.272 4.337 94.866 0.075 61.876 0.621 −22.551 500 0.242 −85.666 3.582 88.592 0.090 61.259 0.603 −23.975 600 0.212 −93.237 3.048 83.504 0.103 59.861 0.590 −25.526 700 0.190 −101.308 2.656 78.785 0.116 58.802 0.580 −27.405 800 0.177 −109.656 2.375 74.561 0.128 57.017 0.573 −29.334 900 0.167 −118.336 2.145 70.348 0.141 55.629 0.563 −31.402 1000 0.163 −127.188 1.968 66.700 0.153 53.851 0.555 −33.301 1500 0.176 −164.287 1.435 50.083 0.203 47.574 0.528 −43.164 2000 0.210 −174.155 1.187 35.998 0.246 41.767 0.501 −54.213 2500 0.226 −159.754 1.034 23.227 0.288 36.614 0.469 −63.689 3000 0.239 −144.224 0.995 14.088 0.340 34.458 0.413 −74.387 http://onsemi.com 4 NSF2250WT1 TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25°C) Freq MHz S11 Mag S21 S12 S22 Ang Mag Ang Mag Ang Mag Ang VCE = 3 V, IC = 10 mA 50 0.643 −35.313 15.384 140.063 0.015 69.823 0.864 −14.048 100 0.459 −53.013 11.650 121.580 0.024 63.636 0.738 −17.013 200 0.289 −70.035 7.214 104.714 0.040 65.531 0.647 −17.265 300 0.225 −80.644 5.260 96.934 0.053 66.205 0.618 −18.444 400 0.192 −91.607 4.122 91.266 0.068 66.344 0.598 −20.216 500 0.172 −102.488 3.419 86.447 0.082 64.574 0.584 −22.273 600 0.161 −113.748 2.929 82.212 0.096 63.206 0.572 −24.418 700 0.156 −125.151 2.575 78.231 0.107 61.822 0.561 −26.828 800 0.155 −135.549 2.313 74.282 0.119 60.606 0.553 −28.821 900 0.156 −145.469 2.099 70.461 0.131 59.154 0.543 −31.132 1000 0.163 −153.718 1.925 67.004 0.141 57.409 0.536 −33.247 1500 0.201 −175.526 1.415 50.535 0.193 52.024 0.505 −43.365 2000 0.237 −159.398 1.173 36.726 0.240 46.396 0.477 −54.652 2500 0.247 −147.097 1.021 24.113 0.289 41.529 0.444 −64.094 3000 0.259 −133.925 0.982 15.023 0.346 38.491 0.382 −75.243 TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25°C) Freq MHz S11 Mag S21 Ang S12 S22 Mag Ang Mag Ang Mag Ang VCE = 10 V, IC = 5 mA 50 0.877 −17.278 11.972 157.707 0.012 81.580 0.972 −7.268 100 0.765 −31.274 10.386 140.944 0.022 72.099 0.900 −12.126 200 0.539 −49.213 7.575 118.277 0.037 66.849 0.803 −14.944 300 0.406 −57.758 5.678 105.478 0.049 66.104 0.757 −16.182 400 0.334 −63.347 4.464 97.467 0.062 65.473 0.729 −17.508 500 0.286 −68.461 3.698 91.347 0.073 64.460 0.717 −19.007 600 0.252 −73.828 3.159 86.264 0.085 63.014 0.706 −20.874 700 0.227 −79.612 2.766 81.745 0.095 62.100 0.697 −22.551 800 0.208 −86.135 2.474 77.803 0.106 60.785 0.690 −24.442 900 0.190 −93.121 2.237 73.571 0.116 59.532 0.682 −26.405 1000 0.179 −100.507 2.047 70.150 0.125 57.905 0.674 −28.385 1500 0.162 −139.494 1.495 53.949 0.169 52.604 0.652 −37.411 2000 0.185 −167.453 1.242 40.156 0.207 47.697 0.631 −47.834 2500 0.200 −175.534 1.082 27.306 0.247 44.045 0.609 −55.962 3000 0.208 −159.130 1.050 18.234 0.296 42.716 0.557 −65.696 http://onsemi.com 5 NSF2250WT1 VCE = 2.5 V, IC = 2.5 mA S11 S12 j50 j25 90° 60° 120° j100 30° 150° j10 3 GHz 3 GHz 10 0 25 50 100 0 180° 0.05 GHz 0.2 0.3 0.4 0.5 0° 0.05 GHz −j10 −150° −30° −j100 −j25 −60° −120° −90° −j50 Figure 7. Input Reflection Coefficient S22 Figure 8. Reverse Transmission Coefficient S21 j50 j25 90° 60° 120° j100 30° 150° j10 0.05 GHz 0 10 25 50 100 0 180° 3 GHz 0.05 GHz 2 4 6 8 10 0° 3 GHz −j10 −150° −30° −j100 −j25 −60° −120° −90° −j50 Figure 9. Output Reflection Coefficient Figure 10. Forward Transmission Coefficient http://onsemi.com 6 NSF2250WT1 VCE = 3.0 V, IC = 10 mA S11 S12 j50 j25 90° 60° 120° j100 150° 30° 3 GHz j10 3 GHz 10 0 25 50 100 0 180° 0.05 GHz 0.2 0.3 0.4 0.5 0° 0.05 GHz −j10 −150° −30° −j100 −j25 −60° −120° −90° −j50 Figure 11. Input Reflection Coefficient S22 Figure 12. Reverse Transmission Coefficient S21 j50 j25 90° 60° 120° j100 150° 0.05 GHz 30° j10 0 10 25 50 100 0 180° 3 GHz 0.05 GHz 4 8 12 16 20 0° 3 GHz −j10 −150° −30° −j100 −j25 −60° −120° −90° −j50 Figure 13. Output Reflection Coefficient Figure 14. Forward Transmission Coefficient http://onsemi.com 7 NSF2250WT1 TYPICAL COMMON BASE SCATTERING PARAMETER (TA = 25°C) Freq MHz S11 Mag S21 S12 S22 Ang Mag Ang Mag Ang Mag Ang VCE = 2.5 V, IC = 2.5 mA 50 0.627 176.455 1.6218 −3.3808 0.003 81.692 1.006 −1.7455 100 0.626 172.821 1.6153 −6.8404 0.008 87.954 1.002 −3.5734 200 0.622 165.583 1.6042 −13.205 0.014 92.620 1.005 −6.7806 400 0.608 151.867 1.5630 −26.289 0.031 96.834 1.006 −13.779 600 0.589 138.455 1.5099 −39.579 0.052 96.285 1.016 −21.141 800 0.566 126.103 1.4461 −52.382 0.076 94.675 1.022 −28.553 1000 0.541 114.811 1.3613 −65.315 0.102 90.577 1.026 −36.519 1500 0.476 89.445 1.1404 −98.892 0.170 78.774 1.014 −57.448 2000 0.397 68.206 0.8928 −133.58 0.233 68.003 0.922 −77.708 TYPICAL COMMON BASE SCATTERING PARAMETER (TA = 25°C) Freq MHz S11 Mag S21 S12 S22 Ang Mag Ang Mag Ang Mag Ang VCE = 3 V, IC = 5 mA 50 0.781 176.95 1.7732 −3.0425 0.004 85.472 1.006 −1.6658 100 0.780 174.093 1.7625 −5.9870 0.006 88.871 1.002 −3.5604 200 0.776 168.012 1.7622 −11.733 0.013 94.408 1.004 −6.7723 400 0.759 156.688 1.7285 −23.541 0.029 100.70 1.006 −13.627 600 0.743 145.893 1.6911 −35.161 0.047 100.93 1.015 −20.799 800 0.725 135.660 1.6441 −46.886 0.071 98.938 1.024 −28.057 1000 0.709 126.241 1.5817 −58.697 0.095 95.803 1.031 −35.921 1500 0.674 103.465 1.4275 −90.316 0.172 85.633 1.037 −56.915 2000 0.620 81.3686 1.1968 −123.89 0.249 73.589 0.957 −77.953 TYPICAL COMMON BASE SCATTERING PARAMETER (TA = 25°C) Freq MHz S11 Mag S21 S12 S22 Ang Mag Ang Mag Ang Mag Ang VCE = 3 V, IC = 10 mA 50 0.867 176.898 1.8601 −3.2938 0.004 88.195 1.006 −1.7132 100 0.863 173.941 1.8432 −6.3479 0.007 90.044 1.001 −3.6916 200 0.851 167.942 1.8370 −12.359 0.014 91.598 1.003 −6.9503 400 0.821 157.527 1.7814 −23.95 0.029 96.128 1.003 −13.909 600 0.795 148.933 1.7303 −34.993 0.045 97.955 1.011 −21.082 800 0.782 139.487 1.6831 −46.443 0.067 98.521 1.018 −28.456 1000 0.773 131.501 1.6327 −57.916 0.091 96.532 1.024 −36.296 1500 0.765 110.253 1.4975 −89.11 0.169 88.005 1.031 −57.462 2000 0.730 87.937 1.2711 −123.21 0.253 76.070 0.950 −78.777 http://onsemi.com 8 NSF2250WT1 VCE = 2.5 V, IC = 2.5 mA S11 S12 j50 j25 90° 2 GHz 60° 120° j100 30° 150° j10 2 GHz 10 25 0.05 GHz 0 50 100 0 180° 0.05 GHz 0.1 0.15 0.2 0.25 0° −j10 −150° −30° −j100 −j25 −60° −120° −90° −j50 Figure 15. Input Reflection Coefficient S22 Figure 16. Reverse Transmission Coefficient S21 j50 j25 90° 60° 120° j100 30° 150° j10 0 10 25 50 100 0 0.05 180° 0.1 0.15 0.05 GHz 0.2 0.25 0° 0.05 GHz 2 GHz −j10 −150° −j25 2 GHz −30° −j100 −60° −120° −90° −j50 Figure 17. Output Reflection Coefficient Figure 18. Forward Transmission Coefficient http://onsemi.com 9 NSF2250WT1 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 DIM A A1 A2 b c D E e e1 L HE 2 b e A 0.05 (0.002) c A2 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR L A1 MIN 0.80 0.00 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 10 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NSF2250WT1/D