MSB92ASWT1 Preferred Device PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector-Base Voltage V(BR)CBO -300 Vdc Collector-Emitter Voltage V(BR)CEO -300 Vdc Emitter-Base Voltage V(BR)EBO -5.0 Vdc IC 500 mAdc ESD MBM16,000, MM2,000 V Rating Collector Current - Continuous Electrostatic Discharge 2 EMITTER 3 SC-70/SOT-323 CASE 419 STYLE 3 1 THERMAL CHARACTERISTICS Rating 1 BASE Symbol Max Unit Power Dissipation (Note 1.) PD 150 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg - 55 ~ + 150 °C 2 MARKING DIAGRAM 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. D3 M D3 = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping MSB92ASWT1 SC-70/ SOT-323 8mm Tape & Reel (7-inch/3000 Unit) Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 May, 2003 - Rev. 0 1 Publication Order Number: MSB92ASWT1/D MSB92ASWT1 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -300 - Vdc Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -300 - Vdc Emitter-Base Breakdown Voltage (IE = -100 Adc, IE = 0) V(BR)EBO -5.0 - Vdc Collector-Base Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO - -0.25 A Emitter-Base Cutoff Current (VEB = -3.0 Vdc, IB = 0) IEBO - -0.1 A DC Current Gain (Note ) MSB92AWT1: (VCE = -10 Vdc, IC = -1.0 mAdc) (VCE = -10 Vdc, IC = -10 mAdc) (VCE = -10 Vdc, IC = -30 mAdc) hFE1 hFE2 hFE3 120 40 25 200 - Collector-Emitter Saturation Voltage (Note ) (IC = -20 mAdc, IB = -2.0 mAdc) VCE(sat) - -0.5 Vdc Base-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) VBE(sat) - -0.9 Vdc fT 50 - MHz Ccb - 6.0 pF - SMALL SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = -20 Vdc, IE = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width ≤ 300 s, D.C. ≤ 2%. http://onsemi.com 2 MSB92ASWT1 INFORMATION FOR USING THE SC-70/SOT-323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 0.037 0.95 0.094 2.4 0.039 1.0 0.031 0.8 inches mm SC-70/SOT-323 POWER DISSIPATION The power dissipation of the SC-70/SOT-323 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 200 milliwatts. PD = 150°C - 25°C 0.625°C/W = 200 milliwatts The 0.625°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation of 300 milliwatts can be achieved using the same footprint. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. • • • 260°C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 3 MSB92ASWT1 SOLDER STENCIL GUIDELINES The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189 °C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 1 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 RAMP" 200°C 150°C STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES 205° TO 219°C PEAK AT SOLDER JOINT 170°C 160°C 150°C 140°C 100°C 100°C 50°C STEP 6 STEP 7 VENT COOLING SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 1. Typical Solder Heating Profile http://onsemi.com 4 MSB92ASWT1 PACKAGE DIMENSIONS SC-70/SOT-323 CASE 419-02 ISSUE L A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D G C 0.05 (0.002) J N DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 K H STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 5 STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE MSB92ASWT1 SENSEFET is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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