PZT3906T1 Preferred Device General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO - 40 Vdc Collector - Base Voltage VCBO - 40 Vdc Emitter - Base Voltage VEBO - 5.0 Vdc IC - 200 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RJA 556 °C/W PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg - 55 to +150 °C Collector Current - Continuous http://onsemi.com COLLECTOR 2, 4 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR - 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature 3 EMITTER MARKING DIAGRAM SOT - 223 CASE 318E Style 1 2A 1. FR - 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 2A = Specific Device Code ORDERING INFORMATION Device Package Shipping PZT3906T1 SOT - 223 1000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 June, 2003 - Rev. 0 1 Publication Order Number: PZT3906T1/D PZT3906T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max - 40 - - 40 - - 5.0 - - - 50 - - 50 60 80 100 60 30 300 - - - 0.25 - 0.4 - 0.65 - - 0.85 - 0.95 250 - - 4.5 - 10 2.0 12 0.1 10 100 400 3.0 60 - 4.0 35 Unit OFF CHARACTERISTICS (Note 3) Collector - Emitter Breakdown Voltage (Note 3) (IC = - 1.0 mAdc, IB = 0) V(BR)CEO Collector - Base Breakdown Voltage (IC = - 10 Adc, IE = 0) V(BR)CBO Emitter - Base Breakdown Voltage (IE = - 10 Adc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = - 30 Vdc, VEB = - 3.0 Vdc) IBL Collector Cutoff Current (VCE = - 30 Vdc, VEB = - 3.0 Vdc) ICEX Vdc nAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = - 0.1 mAdc, VCE = - 1.0 Vdc) (IC = - 1.0 mAdc, VCE = - 1.0 Vdc) (IC = - 10 mAdc, VCE = - 1.0 Vdc) (IC = - 50 mAdc, VCE = - 1.0 Vdc) (IC = - 100 mAdc, VCE = - 1.0 Vdc) HFE Collector - Emitter Saturation Voltage (IC = - 10 mAdc, IB = - 1.0 mAdc) (IC = - 50 mAdc, IB = - 5.0 mAdc) VCE(sat) Base - Emitter Saturation Voltage (IC = - 10 mAdc, IB = - 1.0 mAdc) (IC = - 50 mAdc, IB = - 5.0 mAdc) VBE(sat) - Vdc SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = - 10 mAdc, VCE = - 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = - 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = - 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (IC = - 1.0 mAdc, VCE = - 10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = - 1.0 mAdc, VCE = - 10 Vdc, f = 1.0 kHz) hre Small - Signal Current Gain (IC = - 1.0 mAdc, VCE = - 10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = - 1.0 mAdc, VCE = - 10 Vdc, f = 1.0 kHz) hoe Noise Figure (IC = - 100 Adc, VCE = - 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) NF MHz pF k X 10 - 4 mhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = - 3.0 Vdc, VBE = 0.5 Vdc, IC = - 10 mAdc, IB1 = - 1.0 mAdc) td - tr - 35 (VCC = - 3.0 Vdc, IC = - 10 mAdc, IB1 = IB2 = - 1.0 mAdc) ts - 225 tf - 75 3. Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. http://onsemi.com 2 ns PZT3906T1 3V 3V < 1 ns +9.1 V 275 275 < 1 ns +0.5 V 10 k 10 k 0 CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 1N916 10 < t1 < 500 s t1 CS < 4 pF* 10.9 V DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 3 PZT3906T1 TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25°C TJ = 125°C Cibo 3.0 2.0 VCC = 40 V IC/IB = 10 1000 700 500 300 200 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 100 70 50 20 30 40 2.0 3.0 1.0 Figure 3. Capacitance 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 4. Charge Data 500 500 IC/IB = 10 300 200 VCC = 40 V IB1 = IB2 300 200 tr @ VCC = 3.0 V 15 V 30 20 t f , FALL TIME (ns) TIME (ns) IC/IB = 20 100 70 50 100 70 50 30 20 IC/IB = 10 40 V 10 7 5 10 2.0 V 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn - On Time Figure 6. Fall Time 200 TYPICAL AUDIO SMALL - SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = - 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 A 2.0 1.0 0 0.1 SOURCE RESISTANCE = 2.0 k IC = 100 A 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 20 40 IC = 0.5 mA 8 6 4 IC = 50 A 2 IC = 100 A 0 100 0.1 Figure 7. 0.2 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 8. http://onsemi.com 4 40 100 PZT3906T1 h PARAMETERS (VCE = - 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , DC CURRENT GAIN 300 200 100 70 50 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 Figure 9. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 −4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 10. Output Admittance 20 0.3 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 5.0 7.0 10 0.1 Figure 11. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 12. Voltage Feedback Ratio http://onsemi.com 5 PZT3906T1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 −55 °C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region TJ = 25°C V, VOLTAGE (VOLTS) 0.8 V , TEMPERATURE COEFFICIENTS (mV/ °C) 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 1.0 0.5 0 +25°C TO +125°C −55 °C TO +25°C −0.5 +25°C TO +125°C −1.0 −55 °C TO +25°C VB FOR VBE(sat) −1.5 −2.0 200 VC FOR VCE(sat) 0 Figure 15. “ON” Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 16. Temperature Coefficients http://onsemi.com 6 180 200 PZT3906T1 INFORMATION FOR USING THE SOT - 223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.15 3.8 0.079 2.0 SOT - 223 0.091 2.3 0.248 6.3 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 mm inches SOT - 223 POWER DISSIPATION doubled with this method, area is taken up on the printed circuit board which can defeat the purpose of using surface mount technology. A graph of RJA versus collector pad area is shown in Figure 17. The power dissipation of the SOT-223 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SOT-223 package, PD can be calculated as follows. R JA , Thermal Resistance, Junction to Ambient (C/W) PD = 160 TJ(max) - TA RJA 0.8 Watts 1.25 Watts* 1.5 Watts 100 θ 150°C - 25°C 83.3°C/W TA = 25°C ° 120 The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 1.5 watts. PD = Board Material = 0.0625″ G−10/FR−4, 2 oz Copper 140 80 0.0 = 1.50 watts *Mounted on the DPAK footprint 0.2 0.4 0.6 A, Area (square inches) 0.8 1.0 Figure 17. Thermal Resistance versus Collector Pad Area for the SOT-223 Package (Typical) The 83.3°C/W for the SOT-223 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 1.5 watts. There are other alternatives to achieving higher power dissipation from the SOT-223 package. One is to increase the area of the collector pad. By increasing the area of the collector pad, the power dissipation can be increased. Although the power dissipation can almost be Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 7 PZT3906T1 SOLDER STENCIL GUIDELINES The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. • • • 260°C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 -189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 7 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. http://onsemi.com 8 PZT3906T1 STEP 1 PREHEAT ZONE 1 RAMP" 200°C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" STEP 6 STEP 7 VENT COOLING 205° TO 219°C PEAK AT SOLDER JOINT 170°C 160°C 150°C 150°C 140°C 100°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TMAX TIME (3 TO 7 MINUTES TOTAL) Figure 18. Typical Solder Heating Profile http://onsemi.com 9 PZT3906T1 PACKAGE DIMENSIONS SOT - 223 (TO - 261) CASE 318E - 04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S 1 2 3 B D L G J C 0.08 (0003) M H K INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 BASE COLLECTOR EMITTER COLLECTOR SENSEFET is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303 - 675- 2175 or 800 - 344- 3860 Toll Free USA/Canada Fax: 303 - 675- 2176 or 800 - 344- 3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 2- 9- 1 Kamimeguro, Meguro - ku, Tokyo, Japan 153 - 0051 Phone: 81 - 3- 5773- 3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800 - 282- 9855 Toll Free USA/Canada http://onsemi.com 10 PZT3906T1/D