HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 45A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging Formerly developmental type TA49178. JEDEC STYLE TO-247 Ordering Information PART NUMBER E C PACKAGE G BRAND HGTG20N60C3 TO-247 G20N60C3 HGTP20N60C3 TO-220AB G20N60C3 HGT1S20N60C3S TO-263AB G20N60C3 COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N60C3S9A. JEDEC TO-220AB (ALTERNATE VERSION) Symbol C E G C G COLLECTOR (FLANGE) E JEDEC TO-263AB COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 45 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 300 A Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 20A at 600V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 164 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E ARV 100 mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 4 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 10 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 10Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage PARAMETER BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 28 - V - - 250 µA Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage SYMBOL ICES VCE(SAT) VGE(TH) IGES SSOA VGEP TEST CONDITIONS VCE = BVCES IC = IC110 VGE = 15V TC = 25oC TC = 150oC - - 5.0 mA TC = 25oC - 1.4 1.8 V TC = 150oC IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH - 1.5 1.9 V 3.4 4.8 6.3 V - - ±250 nA VCE = 480V 120 - - A VCE = 600V 20 - - A ICE = IC110, VCE = 0.5 BVCES - 8.4 - V On-State Gate Charge QG(ON) ICE = IC110 VCE = 0.5 BVCES VGE = 15V - 91 110 nC VGE = 20V - 122 145 nC Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 1mH Test Circuit (Figure 17) - 28 32 ns Current Rise Time Current Turn-Off Delay Time Current Fall Time trI td(OFF)I 24 28 ns - 151 210 ns - 55 98 ns - 295 320 µJ EON2 - 500 550 µJ EOFF - 500 700 µJ tfI Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) Turn-Off Energy (Note 3) ©2001 Fairchild Semiconductor Corporation - HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS MIN TYP MAX UNITS - 28 32 ns IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 1mH Test Circuit (Figure 17) - 24 28 ns - 280 450 ns - 108 210 ns - 380 410 µJ mJ Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) EON2 - 1.0 1.1 Turn-Off Energy (Note 3) EOFF - 1.2 1.7 mJ 0.76 oC/W Thermal Resistance Junction To Case RθJC - - NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. Unless Otherwise Specified VGE = 15V 40 30 20 10 0 25 75 50 100 125 150 140 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH 120 100 80 60 40 20 0 0 TC , CASE TEMPERATURE (oC) VGE 15V 10V 15V 10V 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.76oC/W, SEE NOTES 1 2 5 10 20 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX , OPERATING FREQUENCY (kHz) 75oC 75oC 110oC 110oC 300 400 500 700 600 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA TJ = 150oC, RG = 10Ω, L = 1mH, V CE = 480V TC 200 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 100 100 14 450 VCE = 360V, RG = 10Ω, TJ = 125oC 12 400 ISC 10 350 8 300 6 250 4 200 tSC 2 150 10 11 12 13 14 ISC , PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 50 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 15 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Unless Otherwise Specified (Continued) 100 80 TC = -55oC 60 TC = 25oC TC = 150oC 40 20 DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250µs 0 0 4 2 8 6 10 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 300 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 250 TC = 25oC 200 150 TC = -55oC TC = 150oC 100 50 0 0 VCE , COLLECTOR TO EMITTER VOLTAGE (V) EOFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 3.5 TJ = 25oC, TJ = 150oC, VGE = 10V 2.5 2.0 1.5 1.0 0.5 TJ = 25oC, TJ = 150oC, VGE = 15V 10 15 20 5 6 25 30 35 RG = 10Ω, L = 1mH, VCE = 480V 2.5 2.0 TJ = 150oC; VGE = 10V OR 15V 1.5 1.0 0.5 0 40 TJ = 25oC; VGE = 10V OR 15V 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 200 50 RG = 10Ω, L = 1mH, VCE = 480V RG = 10Ω, L = 1mH, VCE = 480V 175 45 40 TJ = 25oC, TJ = 150oC, VGE = 10V 35 30 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 4 3.0 RG = 10Ω, L = 1mH, V CE = 480V 5 3 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 4.0 0 2 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3.0 1 150 TJ = 25oC, TJ = 150oC, VGE = 10V 125 100 75 50 25 25 TJ = 25oC, TJ = 150oC, VGE = 15V TJ = 25oC AND TJ = 150oC, VGE = 15V 0 20 5 10 15 20 25 30 35 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 40 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Typical Performance Curves Unless Otherwise Specified (Continued) 120 RG = 10Ω, L = 1mH, VCE = 480V RG = 10Ω, L = 1mH, VCE = 480V 275 110 250 100 225 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 300 TJ = 150oC, VGE = 10V, VGE = 15V 200 TJ = 25oC, VGE = 10V, VGE = 15V 175 TJ = 150oC, VGE = 10V OR VGE = 15V 90 80 70 150 60 125 50 TJ = 25oC, VGE = 10V OR 15V 40 100 5 10 15 20 25 30 35 5 40 10 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE, GATE TO EMITTER VOLTAGE (V) ICE , COLLECTOR TO EMITTER CURRENT (A) 16 DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250µs TC = -55oC TC = 150oC 150 100 TC = 25oC 50 0 5 6 7 8 9 10 12 11 13 25 30 35 40 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 300 200 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 250 15 14 12 10 VCE = 600V 8 VCE = 200V 6 VCE = 400V 4 2 0 15 IG (REF) = 1mA, RL = 15Ω, TC = 25oC 14 0 10 20 30 40 50 60 70 80 90 100 Qg, GATE CHARGE (nC) VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS 5 FREQUENCY = 1MHz CIES C, CAPACITANCE (nF) 4 3 2 COES 1 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ©2001 Fairchild Semiconductor Corporation HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves 100 Unless Otherwise Specified (Continued) 0.5 0.2 0.1 0.05 10-1 0.02 0.01 10-2 t1 SINGLE PULSE 10-3 -5 10 PD DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-4 10-3 10-2 10-1 t2 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms RHRP3060 90% 10% VGE EON2 EOFF L = 1mH VCE RG = 10Ω 90% + - ICE VDD = 480V 10% td(OFF)I tfI trI td(ON)I FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 18. SWITCHING TEST WAVEFORMS HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 18. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4