ONSEMI MBT2222ADW1T1

MBT2222ADW1T1
General Purpose Transistor
NPN Silicon
• Moisture Sensitivity Level: 1
• ESD Rating: Human Body Model − 4 kV
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Machine Model − 400 V
MAXIMUM RATINGS
Rating
(3)
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
40
Vdc
Collector−Base Voltage
VCBO
75
Vdc
Emitter−Base Voltage
VEBO
6.0
Vdc
IC
600
mAdc
Symbol
Max
Unit
PD
150
mW
RJA
833
°C/W
TJ, Tstg
−55 to +150
Collector Current − Continuous
(2)
(1)
Q1
Q2
(4)
(5)
(6)
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1
SC−88/SC70−6/SOT−363
CASE 419B
STYLE 1
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
MARKING DIAGRAM
6
1P D
1
1P = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
MBT2222ADW1T1
SOT−363
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 1
1
Publication Order Number:
MBT2222ADW1T1/D
MBT2222ADW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector−Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
75
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
ICEX
−
10
nAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
ICBO
−
−
0.01
10
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
−
100
nAdc
IBL
−
20
nAdc
35
50
75
35
100
50
40
−
−
−
−
300
−
−
−
−
0.3
1.0
0.6
−
1.2
2.0
OFF CHARACTERISTICS
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 2)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 2)
hFE
Collector−Emitter Saturation Voltage (Note 2)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage (Note 2)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
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2
−
Vdc
Vdc
MBT2222ADW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
fT
300
−
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
25
pF
2.0
0.25
8.0
1.25
−
−
8.0
4.0
50
75
300
375
5.0
25
35
200
−
150
−
4.0
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 3)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
rb, Cc
Noise Figure
(IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz)
k
X 10− 4
−
mhos
ps
NF
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 30 Vdc, VBE(off) = − 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
10
tr
−
25
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
60
3. fT is defined as the frequency at which |hfe| extrapolates to unity.
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3
ns
ns
MBT2222ADW1T1
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
+16 V
1.0 to 100 s,
DUTY CYCLE ≈ 2.0%
200
1.0 to 100 s,
DUTY CYCLE ≈ 2.0%
+16 V
0
0
−2 V
1 k
< 2 ns
1k
−14 V
CS* < 10 pF
200
< 20 ns
CS* < 10 pF
1N914
−4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
hFE , DC CURRENT GAIN
1000
700
500
TJ = 125°C
300
200
25°C
100
70
50
−55°C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0
k
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
Figure 4. Collector Saturation Region
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4
3.0
5.0
10
20
30
50
MBT2222ADW1T1
200
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
t′s = ts − 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
5.0 7.0 10
20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k
50 A, RS = 4.0 k
8.0
6.0
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
500
10
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
4.0
2.0
IC = 50 A
100 A
500 A
1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
10
7.0
5.0
Ccb
3.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
RS, SOURCE RESISTANCE (OHMS)
Ceb
0.2 0.3
100 200
f, FREQUENCY (kHz)
20
0.1
0
50
50 100
30
CAPACITANCE (pF)
300
Figure 6. Turn−Off Time
10
2.0
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
300
t, TIME (ns)
t, TIME (ns)
100
70
50
Figure 9. Capacitances
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 10. Current−Gain Bandwidth Product
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5
MBT2222ADW1T1
1.0
+0.5
TJ = 25°C
0
VBE(sat) @ IC/IB = 10
0.6
COEFFICIENT (mV/° C)
V, VOLTAGE (VOLTS)
0.8
1.0 V
VBE(on) @ VCE = 10 V
0.4
0.2
RVC for VCE(sat)
−0.5
−1.0
−1.5
RVB for VBE
−2.0
VCE(sat) @ IC/IB = 10
0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
−2.5
500 1.0 k
0.1 0.2
Figure 11. “On” Voltages
0.5
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
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6
500
MBT2222ADW1T1
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE 02U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
A
G
6
5
DIM
A
B
C
D
G
H
J
K
N
S
4
S
−B−
1
2
3
D 6 PL
0.2 (0.008)
M
B
M
J
C
K
SOLDERING FOOTPRINT
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
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7
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
N
H
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
mm inches
MBT2222ADW1T1
ON Semiconductor and
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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MBT2222ADW1T1/D