NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 12 VOLTS, 1.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 350 mW COLLECTOR 3 1 BASE 2 EMITTER Features •High Continuous Current Capability (1 A) •Low VCE(sat) (150 mV Typical @ 500 mA) •Small Size 1.2 mm x 1.2 mm •This is a Pb-Free Device MARKING DIAGRAM 3 Benefits •High Specific Current and Power Capability Reduces Required PCB Area •Reduced Parasitic Losses Increases Battery Life MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector‐Emitter Voltage VCEO -12 Vdc Collector‐Base Voltage VCBO -12 Vdc Emitter‐Base Voltage VEBO -5.0 Vdc IC -1.0 -3.0 Adc Collector Current - Continuous Collector Current - Peak ICM Electrostatic Discharge ESD HBM Class 3B MM Class C 2 1 SOT-723 CASE 631AA STYLE 1 VE M VE = Specific Device Code M = Date Code ORDERING INFORMATION Device NSS12100M3T5G Package Shipping† SOT-723 (Pb-Free) 8000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2007 September, 2007 - Rev. 0 1 Publication Order Number: NSS12100M3/D NSS12100M3T5G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 460 mW 3.7 mW/°C Thermal Resistance, Junction-to-Ambient RqJA (Note 1) 270 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 625 mW 5.0 mW/°C Thermal Resistance, Junction-to-Ambient RqJA (Note 2) 200 °C/W Thermal Resistance, Junction-to-Lead 3 RqJL 105 °C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage, (IC = -10 mAdc, IB = 0) V(BR)CEO -12 - - Vdc Collector-Base Breakdown Voltage, (IC = -0.1 mAdc, IE = 0) V(BR)CBO -12 - - Vdc Emitter-Base Breakdown Voltage, (IE = -0.1 mAdc, IC = 0) V(BR)EBO -5.0 - - Vdc Collector Cutoff Current, (VCB = -12 Vdc, IE = 0) ICBO - -0.01 -0.1 mAdc Emitter Cutoff Current, (VCES = -5.0 Vdc, IE = 0) IEBO - -0.01 -0.1 mAdc 200 120 80 - - - -0.030 -0.060 -0.040 -0.155 -0.350 -0.035 -0.080 -0.060 -0.220 -0.410 - 0.95 -1.15 - -1.05 -1.15 Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) Collector-Emitter Saturation Voltage (Note 3) (IC = -0.05 A, IB = -0.005 A) (Note 4) (IC = -0.1 A, IB = -0.002 A) (IC = -0.1 A, IB = -0.010 A) (IC = -0.5 A, IB = -0.050 A) (IC = -1.0 A, IB = -0.100 A) VCE(sat) Base-Emitter Saturation Voltage (Note 3) (IC = -1.0 A, IB = -0.01 A) VBE(sat) Base-Emitter Turn-on Voltage (Note 3) (IC = -2.0 A, VCE = -2.0 V) VBE(on) V V V SMALL-SIGNAL CHARACTERISTICS Input Capacitance (VEB = -0.5 V, f = 1.0 MHz) Cibo - 40 50 pF Output Capacitance (VCB = -3.0 V, f = 1.0 MHz) Cobo - 15 20 pF NF - - 5.0 dB Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 1.0 kW, f = 1.0 MHz, BW = 200 Hz) 1. 2. 3. 4. mm2, mm2, FR-4 @ 100 1 oz copper traces. 1 oz copper traces. FR-4 @ 500 Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. Guaranteed by design but not tested. http://onsemi.com 2 0.40 2.0 0.35 1.8 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) NSS12100M3T5G IC/IB = 10 VCE(sat) = 150°C 0.30 0.25 25°C 0.20 0.15 -55°C 0.10 0.05 0 0.01 0.1 IC, COLLECTOR CURRENT (A) 0.001 1.0 0.8 150°C 0.6 0.4 0.2 0 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 25°C (2.0 V) 200 -55°C (5.0 V) -55°C (2.0 V) 1.2 1.0 VBE(sat) = -55°C 0.8 0.6 25°C 0.4 150°C 0.2 0 0 0.001 0.01 0.1 1 10 0.0001 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current IC/IB = 100 1.0 VBE(sat) = -55°C 0.8 25°C 0.6 150°C 0.2 0 0.0001 0.01 0.1 1 Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.2 0.00001 0.001 IC, COLLECTOR CURRENT (A) VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 10 IC/IB = 10 400 150°C (2.0 V) 25°C (5.0 V) 0.4 0.1 1 0.01 IC, COLLECTOR CURRENT (A) Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 150°C (5.0 V) hFE, DC CURRENT GAIN 25°C 1.2 1.4 500 100 1.4 0.001 600 300 1.6 1 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current VCE(sat) = -55°C IC/IB = 100 0.01 0.001 1.0 0.9 VBE(on) = -55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.2 VCE = -3.0 V 0.1 0 0.001 IC, COLLECTOR CURRENT (A) 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 5. Base Emitter Saturation Voltage vs. Collector Current Figure 6. Base Emitter Turn-On Voltage vs. Collector Current http://onsemi.com 3 1 50 3.0 100 mA 300 mA IC = 500 mA Cibo, INPUT CAPACITANCE (pF) VCE, COLLECTOR-EMITTER VOLTAGE (V) NSS12100M3T5G 2.5 2.0 1.5 1.0 0.5 10 mA 0 45 Cibo(pF) 40 35 30 25 20 15 10 5 0 0.01 0.1 1 10 100 0 IB, BASE CURRENT (mA) Figure 7. Saturation Region @ 255C 2 3 4 5 VEB, EMITTER BASE VOLTAGE (V) 6 Figure 8. Input Capacitance 25 10 IC, COLLECTOR CURRENT (A) Cobo, OUTPUT CAPACITANCE (pF) 1 20 Cobo(pF) 15 10 5 0 0 1 2 3 4 5 6 7 8 VCB, COLLECTOR BASE VOLTAGE (V) 9 1.0 ms 1 10 ms Power Limit Package Limit 0.01 0.1 10 100 ms 1.0 s 0.1 Figure 9. Output Capacitance 1 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 10. Safe Operating Area http://onsemi.com 4 100 NSS12100M3T5G PACKAGE DIMENSIONS SOT-723 CASE 631AA-01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. -XD A b1 -Y3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L C MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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