ONSEMI NSS12100M3T5G

NSS12100M3T5G
12 V, 1 A, Low VCE(sat)
PNP Transistor
ON Semiconductor's e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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12 VOLTS, 1.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 350 mW
COLLECTOR
3
1
BASE
2
EMITTER
Features
•High Continuous Current Capability (1 A)
•Low VCE(sat) (150 mV Typical @ 500 mA)
•Small Size 1.2 mm x 1.2 mm
•This is a Pb-Free Device
MARKING
DIAGRAM
3
Benefits
•High Specific Current and Power Capability Reduces Required PCB Area
•Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector‐Emitter Voltage
VCEO
-12
Vdc
Collector‐Base Voltage
VCBO
-12
Vdc
Emitter‐Base Voltage
VEBO
-5.0
Vdc
IC
-1.0
-3.0
Adc
Collector Current - Continuous
Collector Current - Peak
ICM
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
2
1
SOT-723
CASE 631AA
STYLE 1
VE M
VE = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
NSS12100M3T5G
Package
Shipping†
SOT-723
(Pb-Free)
8000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2007
September, 2007 - Rev. 0
1
Publication Order Number:
NSS12100M3/D
NSS12100M3T5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
460
mW
3.7
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
625
mW
5.0
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA (Note 2)
200
°C/W
Thermal Resistance,
Junction-to-Lead 3
RqJL
105
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage, (IC = -10 mAdc, IB = 0)
V(BR)CEO
-12
-
-
Vdc
Collector-Base Breakdown Voltage, (IC = -0.1 mAdc, IE = 0)
V(BR)CBO
-12
-
-
Vdc
Emitter-Base Breakdown Voltage, (IE = -0.1 mAdc, IC = 0)
V(BR)EBO
-5.0
-
-
Vdc
Collector Cutoff Current, (VCB = -12 Vdc, IE = 0)
ICBO
-
-0.01
-0.1
mAdc
Emitter Cutoff Current, (VCES = -5.0 Vdc, IE = 0)
IEBO
-
-0.01
-0.1
mAdc
200
120
80
-
-
-
-0.030
-0.060
-0.040
-0.155
-0.350
-0.035
-0.080
-0.060
-0.220
-0.410
-
0.95
-1.15
-
-1.05
-1.15
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3)
(IC = -10 mA, VCE = -2.0 V)
(IC = -500 mA, VCE = -2.0 V)
(IC = -1.0 A, VCE = -2.0 V)
Collector-Emitter Saturation Voltage (Note 3)
(IC = -0.05 A, IB = -0.005 A) (Note 4)
(IC = -0.1 A, IB = -0.002 A)
(IC = -0.1 A, IB = -0.010 A)
(IC = -0.5 A, IB = -0.050 A)
(IC = -1.0 A, IB = -0.100 A)
VCE(sat)
Base-Emitter Saturation Voltage (Note 3)
(IC = -1.0 A, IB = -0.01 A)
VBE(sat)
Base-Emitter Turn-on Voltage (Note 3)
(IC = -2.0 A, VCE = -2.0 V)
VBE(on)
V
V
V
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance (VEB = -0.5 V, f = 1.0 MHz)
Cibo
-
40
50
pF
Output Capacitance (VCB = -3.0 V, f = 1.0 MHz)
Cobo
-
15
20
pF
NF
-
-
5.0
dB
Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 1.0 kW, f = 1.0 MHz, BW = 200 Hz)
1.
2.
3.
4.
mm2,
mm2,
FR-4 @ 100
1 oz copper traces.
1 oz copper traces.
FR-4 @ 500
Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Guaranteed by design but not tested.
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2
0.40
2.0
0.35
1.8
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
NSS12100M3T5G
IC/IB = 10
VCE(sat) = 150°C
0.30
0.25
25°C
0.20
0.15
-55°C
0.10
0.05
0
0.01
0.1
IC, COLLECTOR CURRENT (A)
0.001
1.0
0.8
150°C
0.6
0.4
0.2
0
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
25°C (2.0 V)
200 -55°C (5.0 V)
-55°C (2.0 V)
1.2
1.0
VBE(sat) = -55°C
0.8
0.6
25°C
0.4
150°C
0.2
0
0
0.001
0.01
0.1
1
10
0.0001
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
IC/IB = 100
1.0
VBE(sat) = -55°C
0.8
25°C
0.6
150°C
0.2
0
0.0001
0.01
0.1
1
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.2
0.00001
0.001
IC, COLLECTOR CURRENT (A)
VBE(on), BASE EMITTER TURN-ON VOLTAGE (V)
VBE(sat), BASE EMITTER SATURATION VOLTAGE (V)
10
IC/IB = 10
400 150°C (2.0 V)
25°C (5.0 V)
0.4
0.1
1
0.01
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage vs.
Collector Current
150°C (5.0 V)
hFE, DC CURRENT GAIN
25°C
1.2
1.4
500
100
1.4
0.001
600
300
1.6
1
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
VCE(sat) = -55°C
IC/IB = 100
0.01
0.001
1.0
0.9
VBE(on) = -55°C
0.8
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.2
VCE = -3.0 V
0.1
0
0.001
IC, COLLECTOR CURRENT (A)
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
Figure 6. Base Emitter Turn-On Voltage vs.
Collector Current
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3
1
50
3.0
100 mA 300 mA
IC = 500 mA
Cibo, INPUT CAPACITANCE (pF)
VCE, COLLECTOR-EMITTER VOLTAGE (V)
NSS12100M3T5G
2.5
2.0
1.5
1.0
0.5
10 mA
0
45
Cibo(pF)
40
35
30
25
20
15
10
5
0
0.01
0.1
1
10
100
0
IB, BASE CURRENT (mA)
Figure 7. Saturation Region @ 255C
2
3
4
5
VEB, EMITTER BASE VOLTAGE (V)
6
Figure 8. Input Capacitance
25
10
IC, COLLECTOR CURRENT (A)
Cobo, OUTPUT CAPACITANCE (pF)
1
20
Cobo(pF)
15
10
5
0
0
1
2
3
4
5
6
7
8
VCB, COLLECTOR BASE VOLTAGE (V)
9
1.0 ms
1
10 ms
Power Limit
Package Limit
0.01
0.1
10
100 ms
1.0 s
0.1
Figure 9. Output Capacitance
1
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 10. Safe Operating Area
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4
100
NSS12100M3T5G
PACKAGE DIMENSIONS
SOT-723
CASE 631AA-01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
-XD
A
b1
-Y3
E
1
e
HE
L
2
b 2X
0.08 (0.0032) X Y
DIM
A
b
b1
C
D
E
e
HE
L
C
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.15
0.20
0.25
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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For additional information, please contact your local
Sales Representative
NSS12100M3/D