ONSEMI NSS60601MZ4T3G

NSS60601MZ4
60 V, 6.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor's e2 PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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60 VOLTS, 6.0 AMPS
2.0 WATTS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 50 mW
C 2,4
Features
•This is a Pb-Free Device
B1
E3
Schematic
MAXIMUM RATINGS (TA = 25°C)
Rating
MARKING
DIAGRAM
Symbol
Max
Unit
Collector‐Emitter Voltage
VCEO
60
Vdc
Collector‐Base Voltage
VCBO
100
Vdc
Emitter‐Base Voltage
VEBO
6.0
Vdc
IC
6.0
A
ICM
12.0
A
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
800
mW
6.5
mW/°C
PIN ASSIGNMENT
Thermal Resistance,
Junction-to-Ambient
RqJA (Note 1)
155
°C/W
4
C
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
2
W
15.6
mW/°C
B
C
E
°C/W
1
2
3
Collector Current - Continuous
Collector Current - Peak
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Ambient
RqJA (Note 2)
64
PDsingle
(Note 3)
710
mW
Junction and Storage
Temperature Range
TJ, Tstg
-55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ 7.6 mm2, 1 oz. copper traces.
2. FR-4 @ 645 mm2, 1 oz. copper traces.
3. Thermal response.
September, 2007 - Rev. 0
A
Y
W
60601
G
AYW
60601G
1
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb-Free Package
Top View Pinout
Total Device Dissipation
(Single Pulse < 10 sec.)
© Semiconductor Components Industries, LLC, 2007
SOT-223
CASE 318E
STYLE 1
1
ORDERING INFORMATION
Device
Package
Shipping†
NSS60601MZ4T1G
SOT-223
(Pb-Free)
1000/
Tape & Reel
NSS60601MZ4T3G
SOT-223
(Pb-Free)
4000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS60601MZ4/D
NSS60601MZ4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Vdc
60
Vdc
100
Vdc
6.0
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
mAdc
0.1
mAdc
0.1
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
(IC = 6.0 A, VCE = 2.0 V)
hFE
150
120
100
50
Collector-Emitter Saturation Voltage (Note 4)
(IC = 0.1 A, IB = 2.0 mA)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
(IC = 3.0 A, IB = 60 mA)
(IC = 6.0 A, IB = 0.6 A)
VCE(sat)
Base-Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 0.1 A)
VBE(sat)
Base-Emitter Turn-on Voltage (Note 4)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
360
V
0.045
0.085
0.040
0.060
0.100
0.220
0.300
V
0.900
V
0.900
Cutoff Frequency
(IC = 500 mA, VCE = 10 V, f = 100 MHz)
fT
MHz
100
Input Capacitance (VEB = 5.0 V, f = 1.0 MHz)
Cibo
400
pF
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
37
pF
SWITCHING CHARACTERISTICS
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
td
85
ns
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tr
115
ns
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
ts
1350
ns
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tf
125
ns
PD, POWER DISSIPATION (W)
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
2.5
2.0
TC
1.5
1.0
TA
0.5
0
25
50
75
100
TJ, TEMPERATURE (°C)
Figure 1. Power Derating
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2
125
150
NSS60601MZ4
TYPICAL CHARACTERISTICS
400
400
VCE = 2 V
150°C
300
250
25°C
200
150
-55°C
100
250
25°C
200
150
-55°C
100
50
0
0.001
0.01
0.1
1
0
0.001
10
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
Figure 3. DC Current Gain
1
10
1
IC/IB = 10
25°C
0.1
VCE(sat), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
150°C
300
50
150°C
-55°C
0.01
0.001
0.001
0.01
0.1
1
IC/IB = 50
25°C
0.1
150°C
-55°C
0.01
0.001
10
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Collector-Emitter Saturation Voltage
VBE(on), EMITTER-BASE VOLTAGE (V)
1
VCE(sat), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
VCE = 4 V
350
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
350
IC = 6 A
4A
0.1
3A
2A
0.5 A
0.01
0.0001
1A
0.1 A
0.001
0.01
0.1
1
10
1.2
VCE = 2 V
1
-55°C
0.8
25°C
0.6
0.4
150°C
0.2
0
0.001
0.01
0.1
1
IB, BASE CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 6. Collector Saturation Region
Figure 7. VBE(on) Voltage
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3
10
10
NSS60601MZ4
TYPICAL CHARACTERISTICS
1.2
1.2
IC/IB = 50
1
VBE(sat), EMITTER-BASE
SATURATION VOLTAGE (V)
VBE(sat), EMITTER-BASE
SATURATION VOLTAGE (V)
IC/IB = 10
-55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
0.01
0.1
1
1
-55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
10
0.01
IC, COLLECTOR CURRENT (A)
Figure 8. Base-Emitter Saturation Voltage
Cobo, OUTPUT CAPACITANCE (pF)
Cibo, INPUT CAPACITANCE (pF)
10
140
TJ = 25°C
ftest = 1 MHz
800
700
600
500
400
300
200
100
0
1
2
3
4
5
6
7
TJ = 25°C
ftest = 1 MHz
120
100
80
60
40
20
0
8
0
10
20
30
40
50
60
70
80
90
VEB, EMITTER BASE VOLTAGE (V)
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
10
100
140
100
IC, COLLECTOR CURRENT (A)
TJ = 25°C
ftest = 1 MHz
VCE = 10 V
120
fTau, CURRENT BANDWIDTH
PRODUCT (MHz)
1
Figure 9. Base-Emitter Saturation Voltage
900
0
0.1
IC, COLLECTOR CURRENT (A)
80
60
40
20
0
0.01
10
0.5 ms
1 ms
1
10 ms
100 ms
0.1
0.01
0.1
1
10
1
IC, COLLECTOR CURRENT (A)
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 12. Current-Gain Bandwidth Product
Figure 13. Safe Operating Area
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4
10
NSS60601MZ4
PACKAGE DIMENSIONS
SOT-223 (TO-261)
CASE 318E-04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
b1
DIM
A
A1
b
b1
c
D
E
e
e1
L1
HE
4
HE
E
1
2
3
b
e1
e
A
0.08 (0003)
q
C
q
A1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
STYLE 1:
PIN 1.
2.
3.
4.
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
1.75
2.00
7.00
7.30
10°
-
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
-
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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NSS60601MZ4/D