NST489AMT1 High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 3.0 AMPS NPN TRANSISTOR Features • Pb−Free Package is Available COLLECTOR 1, 2, 5, 6 MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5.0 V IC 2.0 A ICM 3.0 A Rating Collector Current − Continuous Collector Current − Peak 3 BASE 4 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation TA = 25°C Derate above 25°C 6 Symbol Max 1 535 4.3 mW mW/°C 234 °C/W 1.180 9.4 W mW/°C RqJA (Note 2) 106 °C/W Thermal Resistance, Junction−to−Lead #1 RqJL (Note 1) RqJL (Note 2) 110 50 °C/W °C/W PDsingle (Notes 2 and 3) 1.75 W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 with 1 oz and 3.9 mm2 of copper area. 2. FR−4 with 1 oz and 645 mm2 of copper area. 3. Refer to Figure 8. 2 3 TSOP−6 CASE 318G STYLE 6 PD (Note 2) Thermal Resistance, Junction−to−Ambient Total Device Dissipation (Single Pulse < 10 s) 4 Unit PD (Note 1) RqJA (Note 1) 5 DEVICE MARKING N2 M G G N2 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† NST489AMT1 TSSOP−6 3000/Tape & Reel NST489AMT1G TSSOP−6 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 7 1 Publication Order Number: NST489AMT1/D NST489AMT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 30 − − V Collector−Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO 50 − − V Emitter −Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO 5.0 − − V Collector Cutoff Current (VCB = 30 V, IE = 0) ICBO − − 0.1 mA Collector−Emitter Cutoff Current (VCES = 30 V) ICES − − 0.1 mA Emitter Cutoff Current (VEB = 4.0 V) IEBO − − 0.1 mA hFE 300 300 200 − 500 − − 900 − VCE(sat) − − − 0.10 0.06 0.05 0.200 0.125 0.075 V Base −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.1 A) VBE(sat) − − 1.1 V Base −Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V) VBE(on) − − 1.1 V fT 200 300 − MHz Cobo − − 15 pF Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS (IC = 1.0 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) DC Current Gain (Note 4) Collector −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz Output Capacitance (f = 1.0 MHz) 4. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%. 1.0 0.9 IC = 2 A 0.8 0.7 0.8 0.7 IC = 1 A 0.6 VCE(sat) (V) VCE(sat) (V) 1.0 0.9 0.5 0.4 0.3 0 0.5 Ic/Ib = 100 0.4 0.3 IC = 500 mA 0.2 0.1 0.6 Ic/Ib = 10 0.2 0.1 IC = 100 mA 0.001 0.01 Ib (A) 0.1 0 0.2 0.001 800 600 2 1.2 VCE = 5 V VCE = 5 V +125°C 1.0 +25°C 0.8 VBE(on) (V) hFE 1 Figure 2. VCE (sat) versus Ic 500 400 300 0.1 Ic (A) Figure 1. VCE (sat) versus Ib 700 0.01 −55°C −55°C +25°C 0.6 0.4 +125°C 200 0.2 100 0 0.001 0.01 0.1 1 0 2 0.001 0.01 0.1 Ic (A) Ic (A) Figure 3. hFE versus Ic Figure 4. VBE(on) versus Ic http://onsemi.com 2 1 2 NST489AMT1 1.2 IC COLLECTOR CURRENT (A) 10.00 1.0 VBE (sat) (V) Ic/Ib = 10 0.8 Ic/Ib = 100 0.6 0.4 0.2 0 0.001 0.01 1 0.1 3.0 1.00 1 ms 10 ms 100 ms 0.10 1s SINGLE PULSE Tamb = 25°C 0.01 0.10 1.00 10.00 VCE(sat) (V) 2 Ic (A) Figure 5. VBE(sat) versus Ic dc 100.00 Figure 6. Safe Operating Area fT, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 1000 100 10 1 10 100 1000 IC, COLLECTOR CURRENT (mA) r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 7. fT (MHZ) versus IC (mA) VCE = 5.0 V 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 8. Normalized Thermal Response http://onsemi.com 3 10 100 1000 NST489AMT1 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e q c A 0.05 (0.002) L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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