NSL12AWT1G High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications http://onsemi.com Features • • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 12 VOLTS 3.0 AMPS PNP TRANSISTOR COLLECTOR 1, 2, 5, 6 Benefits • High Specific Current and Power Capability Reduces Required PCB Area • Reduced Parasitic Losses Increases Battery Life MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage VCBO −12 Vdc Emitter-Base Voltage VEBO −5.0 Vdc Collector Current − Continuous Collector Current − Peak IC ICM −2.0 −3.0 Adc Electrostatic Discharge ESD HBM Class 3 MM Class C 3 BASE 4 EMITTER SC−88/SOT−363 CASE 419B STYLE 20 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 450 mW 3.6 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 275 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 650 mW 5.2 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 192 °C/W RqJL 105 °C/W PD Single 1.4 W TJ, Tstg −55 to +150 °C Thermal Resistance, Junction−to−Lead 6 Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range 6 11 MG G 1 M G = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 1. FR−4, Minimum Pad, 1 oz Coverage 2. FR−4, 1″ Pad, 1 oz Coverage © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 3 1 Publication Order Number: NSL12AW/D NSL12AWT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage, (IC = −10 mAdc, IB = 0) V(BR)CEO −12 −15 − Vdc Collector −Base Breakdown Voltage, (IC = −0.1 mAdc, IE = 0) V(BR)CBO −12 −25 − Vdc Emitter −Base Breakdown Voltage, (IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 −7.0 − Vdc Collector Cutoff Current, (VCB = −12 Vdc, IE = 0) ICBO − −0.02 −0.1 mAdc Collector−Emitter Cutoff Current, (VCES = −12 Vdc, IE = 0) ICES − −0.03 −0.1 mAdc Emitter Cutoff Current, (VCES = −5.0 Vdc, IE = 0) IEBO − −0.03 −0.1 mAdc 100 100 100 180 165 160 − 300 − − − − −0.10 −0.14 −0.17 −0.160 −0.235 −0.290 − −0.84 −0.95 − −0.81 −0.95 − 100 − − 50 65 OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −0.5 A, VCE = −1.5 V) (IC = −0.8 A, VCE = −1.5 V) (IC = −1.0 A, VCE = −1.5 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = −0.5 A, IB = −10 mA) (IC = −0.8 A, IB = −16 mA) (IC = −1.0 A, IB = −20 mA) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −20 mA) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −1.5 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT Output Capacitance (VCB = −1.5 V, f = 1.0 MHz) Cobo V V V MHz pF 3. Pulsed Condition: Pulse Width < 300 msec, Duty Cycle < 2% ORDERING INFORMATION Device NSL12AWT1G Package Shipping† SOT−363 (Pb−Free) 3000 Tape & Reel VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0.5 0.4 2A 0.3 0.2 1A 800 mA 0.1 IC = 100 mA 0 1 500 mA 10 IB, BASE CURRENT (mA) 100 Figure 1. Collector Emitter Voltage vs Base Current 0.5 0.4 0.3 0.2 IC/IB = 100 0.1 IC/IB = 10 0 0.001 0.1 0.01 IC, COLLECTOR CURRENT (AMPS) 1 Figure 2. Collector Emitter Voltage vs Collector Current http://onsemi.com 2 NSL12AWT1G 1.0 VCE = 1.5 V 125°C VBE, BASE EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 400 300 25°C 200 100 0 TA = −55°C 0.001 0.01 0.1 0.9 TA = −55°C 0.8 0.7 25°C 0.6 0.5 125°C 0.4 VCE = 1.5 V 0.3 0.001 1 0.01 Figure 3. DC Current Gain versus Collector Current Figure 4. Base Emitter Voltage versus Collector Current 1.0 10 0.9 IC/IB = 10 0.8 IC/IB = 100 0.7 0.6 0.001 0.01 10 ms 1 ms SINGLE PULSE TA = 25°C 0.1 IC, COLLECTOR CURRENT (AMPS) 1 100 ms 0.1 0.01 1 0.1 1s dc 1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 5. Base Emitter Saturation Voltage versus Base Current r(t), MINIMUM PAD NORMALIZED TRANSIENT THERMAL RESISTANCE 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (A) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) IC, COLLECTOR CURRENT (AMPS) 0.1 Figure 6. Safe Operating Area D = 0.50 D = 0.20 D = 0.10 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1 Figure 7. Normalized Thermal Response http://onsemi.com 3 10 100 1000 NSL12AWT1G PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W D e 6 5 4 1 2 3 HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR M A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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