FAIRCHILD KSC5026M

KSC5026M
KSC5026M
High Voltage and High Reliability
• High Speed Switching
• Wide SOA
TO-126
1
1. Emitter
2.Collector
3.Base
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
Collector Current (Pulse)
IB
Base Current
Value
1100
Units
V
800
V
7
V
1.5
A
5
A
0.8
A
PC
Collector Dissipation (TC=25°C)
20
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 1mA, IE = 0
Min.
1100
BVCEO
BVEBO
VCEX(sus)
Typ.
Max.
Units
V
Collector-Emitter Breakdown Voltage
IC = 5mA, IB = 0
800
V
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
7
V
Collector-Emitter Sustaining Voltage
IC = 0.75A
IB1 = -IB2 = 0.15A
L = 5mH, Clamped
800
V
ICBO
Collector Cut-off Current
VCB = 800V, IE = 0
10
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
10
µA
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.5A
10
8
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 0.75A, IB = 0.15A
2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.75A, IB = 0.15A
1.5
V
Cob
Output Capacitance
VCB =10V, IE = 0, f = 1MHz
35
pF
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.1A
15
MHz
VCC = 400V
IC = 5IB1 = -2.5IB2 = 1A
RL = 400Ω
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
0.5
µs
3
µs
0.3
µs
hFE Classification
Classification
N
R
O
hFE1
10 ~ 20
15 ~ 30
20 ~ 40
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
KSC5026M
Typical Characteristics
2.0
1000
VCE = 5V
1.6
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1.8
1.4
1.2
IB = 120mA
1.0
IB = 100mA
IB = 80mA
IB = 60mA
IB = 40mA
0.8
0.6
IB = 20mA
0.4
IB = 10mA
IB = 5mA
IB = 0
0.2
0.0
0
1
2
3
4
5
6
7
8
9
100
10
1
0.01
10
0.1
10
Figure 1. Static Characteristic
Figure 2. DC current Gain
1.6
10
VCE = 5V
IC = 5 IB
1
0.1
IC[A], COLLECTOR CURRENT
1.4
VBE(sat)
VCE(sat)
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0.01
0.1
1
0.0
0.0
10
0.2
IC[A], COLLECTOR CURRENT
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
10
0.01
0.1
IC[A], COLLECTOR CURRENT
s
0.1
DC
ms
10
tON
tF
IC(max)
1
s
1m
tSTG
1
0µ
10
IC(max).(Pulse)
tON, tSTG, tF [µs], TIME
100
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1
0.1
0.01
1E-3
1
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time
©2002 Fairchild Semiconductor Corporation
10
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. B2, December 2002
KSC5026M
Typical Characteristics (Continued)
30
100
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
IB2 = -0.15A
10
1
0.1
20
10
0
0.01
10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
©2002 Fairchild Semiconductor Corporation
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. B2, December 2002
KSC5026M
Package Dimensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
FACT Quiet series™
Bottomless™
FAST®
FASTr™
CoolFET™
CROSSVOLT™ FRFET™
GlobalOptoisolator™
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GTO™
E2CMOS™
HiSeC™
EnSigna™
I2C™
Across the board. Around the world.™
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Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1