KSC5026M KSC5026M High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP Collector Current (Pulse) IB Base Current Value 1100 Units V 800 V 7 V 1.5 A 5 A 0.8 A PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 1100 BVCEO BVEBO VCEX(sus) Typ. Max. Units V Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V Collector-Emitter Sustaining Voltage IC = 0.75A IB1 = -IB2 = 0.15A L = 5mH, Clamped 800 V ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5A 10 8 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 0.75A, IB = 0.15A 2 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.75A, IB = 0.15A 1.5 V Cob Output Capacitance VCB =10V, IE = 0, f = 1MHz 35 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A 15 MHz VCC = 400V IC = 5IB1 = -2.5IB2 = 1A RL = 400Ω tON Turn On Time tSTG Storage Time tF Fall Time 0.5 µs 3 µs 0.3 µs hFE Classification Classification N R O hFE1 10 ~ 20 15 ~ 30 20 ~ 40 ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5026M Typical Characteristics 2.0 1000 VCE = 5V 1.6 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 1.8 1.4 1.2 IB = 120mA 1.0 IB = 100mA IB = 80mA IB = 60mA IB = 40mA 0.8 0.6 IB = 20mA 0.4 IB = 10mA IB = 5mA IB = 0 0.2 0.0 0 1 2 3 4 5 6 7 8 9 100 10 1 0.01 10 0.1 10 Figure 1. Static Characteristic Figure 2. DC current Gain 1.6 10 VCE = 5V IC = 5 IB 1 0.1 IC[A], COLLECTOR CURRENT 1.4 VBE(sat) VCE(sat) 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.01 0.1 1 0.0 0.0 10 0.2 IC[A], COLLECTOR CURRENT 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 10 0.01 0.1 IC[A], COLLECTOR CURRENT s 0.1 DC ms 10 tON tF IC(max) 1 s 1m tSTG 1 0µ 10 IC(max).(Pulse) tON, tSTG, tF [µs], TIME 100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 0.1 0.01 1E-3 1 IC[A], COLLECTOR CURRENT Figure 5. Switching Time ©2002 Fairchild Semiconductor Corporation 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. B2, December 2002 KSC5026M Typical Characteristics (Continued) 30 100 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT IB2 = -0.15A 10 1 0.1 20 10 0 0.01 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Bias Safe Operating Area ©2002 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. B2, December 2002 KSC5026M Package Dimensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1